Philips PBSS2515YPN Technical data
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ook, halfpage
MBD128
PBSS2515YPN
15 V low V
CEsat
transistor
Product specification
Supersedes data of 2001 Jul 24
NPN/PNP
2002 May 08
Philips Semiconductors Product specification
15 V low V
CEsat
NPN/PNP transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• ReplacestwoSC-70packaged lowV
transistorson
CEsat
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATION
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PBSS2515YPN
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 15 V
peak collector current 1 A
equivalent on-resistance <500 mΩ
654
645
TR2
TR1
NPN/PNP low V
transistor pair in a SC-88 plastic
CEsat
package.
MARKING
TYPE NUMBER MARKING CODE
PBSS2515YPN N8t
123
Top view
MAM445
132
Fig.1 Simplified outline SC-88 (SOT363) and
symbol.
2002 May 08 2
Philips Semiconductors Product specification
15 V low V
NPN/PNP transistor
CEsat
PBSS2515YPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 6V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature 65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2002 May 08 3
Philips Semiconductors Product specification
15 V low V
NPN/PNP transistor
CEsat
PBSS2515YPN
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
collector-base cut-off current VCB= 15 V; IE=0 −−100 nA
V
= 15 V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC=10mA 200 −−
V
=2V; IC= 100 mA; note 1 150 −−
CE
V
=2V; IC= 500 mA; note 1 90 −−
CE
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−25 mV
I
= 200 mA; IB=10mA −−150 mV
C
I
= 500 mA; IB= 50 mA; note 1 −−250 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−1.1 V
base-emitter turn-on voltage VCE=2V; IC= 100 mA; note 1 −−0.9 V
NPN transistor
f
T
C
c
transition frequency IC= 100 mA; VCE= 5 V; f = 100 MHz 250 420 − MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz − 4.4 6 pF
PNP transistor
f
T
transition frequency IC= −100 mA; VCE= −5V;
100 280 − MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 May 08 4
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