Datasheet PBSS2515YPN Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

PBSS2515YPN

15 V low V

CEsat

transistor

Product specification
Supersedes data of 2001 Jul 24

NPN/PNP

2002 May 08

Philips Semiconductors Product specification

15 V low V

CEsat

NPN/PNP transistor

FEATURES

• Low collector-emitter saturation voltage

• High current capability

• ReplacestwoSC-70packaged lowV

transistorson

CEsat

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATION

• General purpose switching and muting

• Low frequency driver circuits

• LCD backlighting

• Supply line switching circuits

• Battery driven equipment (mobile phones, video

cameras and hand-held devices).

DESCRIPTION

PBSS2515YPN

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

CM

R

CEsat

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

handbook, halfpage

collector-emitter voltage 15 V
peak collector current 1 A
equivalent on-resistance <500 mΩ

654

645

TR2

TR1

NPN/PNP low V

transistor pair in a SC-88 plastic

CEsat

package.

MARKING

TYPE NUMBER MARKING CODE

PBSS2515YPN N8t

123

Top view

MAM445

132

Fig.1 Simplified outline SC-88 (SOT363) and

symbol.

2002 May 08 2

Philips Semiconductors Product specification

15 V low V

NPN/PNP transistor

CEsat

PBSS2515YPN

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 6V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 100 mA
total power dissipation T

≤ 25 °C − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature 65 +150 °C

Per device

P

tot

total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 416 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2002 May 08 3

Philips Semiconductors Product specification

15 V low V

NPN/PNP transistor

CEsat

PBSS2515YPN

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

collector-base cut-off current VCB= 15 V; IE=0 −−100 nA

V

= 15 V; IE= 0; Tj= 150 °C −−50 µA

CB

emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC=10mA 200 −−

V

=2V; IC= 100 mA; note 1 150 −−

CE

V

=2V; IC= 500 mA; note 1 90 −−

CE

collector-emitter saturation
voltage

IC= 10 mA; IB= 0.5 mA −−25 mV
I

= 200 mA; IB=10mA −−150 mV

C

I

= 500 mA; IB= 50 mA; note 1 −−250 mV

C

equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−1.1 V
base-emitter turn-on voltage VCE=2V; IC= 100 mA; note 1 −−0.9 V

NPN transistor

f

T

C

c

transition frequency IC= 100 mA; VCE= 5 V; f = 100 MHz 250 420 − MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz − 4.4 6 pF

PNP transistor

f

T

transition frequency IC= −100 mA; VCE= −5V;

100 280 − MHz

f = 100 MHz

C

c

collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−10 pF

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2002 May 08 4

Philips Semiconductors Product specification

15 V low V

600

handbook, halfpage

h

FE

400

200

0

−1

10

TR1 (NPN) VCE=2V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

NPN/PNP transistor

CEsat

(1)

(2)

(3)

110

2

10

I

MLD687

10

(mA)

C

PBSS2515YPN

2

IC (mA)

MLD689

3

10

1200

handbook, halfpage

V

BE

(mV)

1000

(1)

800

(2)

600

(3)

400

3

200

−1

110

10 10

TR1 (NPN) VCE=2V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

2

10

I

C

MLD691

(mA)

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

10

1

−1

10

TR1 (NPN) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

(2)

(1)

(3)

110

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

2

IC (mA)

MLD690

3

10

1200

handbook, halfpage

V

BEsat
(mV)

1000

(1)

800

600

(2)

(3)

400

3

10

200

−1

110

10 10

TR1 (NPN) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

2002 May 08 5

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

15 V low V

2

10

handbook, halfpage

R

CEsat

(Ω)

10

1

−1

10

−1

10

NPN/PNP transistor

CEsat

(1)

(2)

(3)

2

110

10

I

MLD692

10

(mA)

C

PBSS2515YPN

(2)(3)

MLD688

(1)

(5)
(6)

(7)

(8)

(9)

(10)

VCE (V)

1200

handbook, halfpage

I

C

(mA)

800

400

3

0

0

TR1 (NPN) T

210

=25°C.

amb

(4)

468

TR1 (NPN) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.6 Equivalent on-resistance as a function of

collector current; typical values.

(1) IB= 4.6 mA.
(2) IB= 4.14 mA.
(3) IB= 3.68 mA.
(4) IB= 3.22 mA.
(5) IB= 2.76 mA.

(6) IB= 2.3 mA.
(7) IB= 1.84 mA.
(8) IB= 1.38 mA.
(9) IB= 0.92 mA.
(10) IB= 0.46 mA.

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

2002 May 08 6

Philips Semiconductors Product specification

15 V low V

600

handbook, halfpage

h

FE

400

200

0

−1

−10

TR2 (PNP) VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

NPN/PNP transistor

CEsat

(1)

(2)

(3)

−1 −10

−10

2

IC (mA)

MLD693

−10

PBSS2515YPN

2

IC (mA)

MLD695

−10

3

−1200

handbook, halfpage

V

BE

(mV)

−1000

(1)

−800

(2)

−600

(3)

−400

3

−200

−1

−1−10

−10 −10

TR2 (PNP) VCE= −2V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.8 DC current gain as a function of collector

current; typical values.

−10

MLD697

2

IC (mA)

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

−10

−1

−1

−10

TR2 (PNP) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

−1 −10

(1)

(2)

(3)

−10

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

2

IC (mA)

MLD696

−10

3

−1200

handbook, halfpage

V

BEsat
(mV)

−1000

(1)

−800

−600

(2)

(3)

−400

3

−200

−1

−1−10

−10 −10

TR2 (PNP) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

2002 May 08 7

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

15 V low V

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

−1

10

−1

−10

NPN/PNP transistor

CEsat

(1)

(3)(2)

−1 −10

−10

2

MLD698

IC (mA)

−10

PBSS2515YPN

(2)(3)

MLD694

(1)

(5)
(6)

(7)

(8)

(9)

(10)

VCE (V)

−1200

handbook, halfpage

I

C

(mA)

−800

−400

3

0

0

TR2 (PNP) T

−2 −10

=25°C.

amb

(4)

−4 −6 −8

TR2 (PNP) IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.12 Equivalent on-resistance as a function of

collector current; typical values.

(1) IB= −7 mA.
(2) IB= −6.3 mA.
(3) IB= −5.6 mA.
(4) IB= −4.9 mA.
(5) IB= −4.2 mA.

(6) IB= −3.5 mA.
(7) IB= −2.8 mA.
(8) IB= −2.1 mA.
(9) IB= −1.4 mA.
(10) IB= −0.7 mA.

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

2002 May 08 8

Philips Semiconductors Product specification

15 V low V

NPN/PNP transistor

CEsat

PBSS2515YPN

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT363

D

y

56

4

E

H

E

AB

X

v M

A

pin 1
index

132

e

DIMENSIONS (mm are the original dimensions)

A

1

mm

1.1

0.8

A

max

0.1

b

0.30

0.20

p

UNIT

b

1

0.25

0.10

p

e

cD

2.2

1.8

A

wBM

0 1 2 mm

scale

E

1.35

1.15

e

1.3

e

1

0.65

H

E

2.2

2.0

0.45

0.15

A

1

detail X

L

Qywv

p

0.25

0.15

Q

c

L

p

0.2 0.10.2

OUTLINE
VERSION

SOT363 SC-88

IEC JEDEC EIAJ

REFERENCES

2002 May 08 9

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

15 V low V

DATA SHEET STATUS

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

NPN/PNP transistor

CEsat

PRODUCT

(1)

STATUS

(2)

PBSS2515YPN

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyotherconditions abovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysnolicence ortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 May 08 10

Philips Semiconductors Product specification

15 V low V

NPN/PNP transistor

CEsat

PBSS2515YPN

NOTES

2002 May 08 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved to be accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/02/pp12 Date of release: 2002 May 08 Document order number: 9397 750 09643

SCA74