Philips pbss2515f DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
PBSS2515F
NPN transistor
Product specification 2000 Oct 25
Philips Semiconductors Product specification
NPN transistor PBSS2515F
FEATURES
• Low V
CEsat
• High current capabilities.
APPLICATIONS
• Heavy duty battery powered equipment (automotive,
telecom and audio video) such as motor and lamp
drivers
• V
critical applications such as latest low supply
CEsat
voltage IC applications
• All battery driven equipment to save battery power.
DESCRIPTION
NPN low V
transistor in a SC-89 (SOT490) plastic
CEsat
package.
PNP complementary: PBSS3515F.
MARKING
TYPE NUMBER MARKING CODE
PBSS2515F 2A
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
12
Top view
3
MAM410
3
1
2
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 6V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2000 Oct 25 2
Philips Semiconductors Product specification
NPN transistor PBSS2515F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-a
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
thermal resistance from junction to ambient in free air 500 K/W
collector-base cut-off current VCB= 15 V; IE=0 −−100 nA
V
= 15 V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC=10mA 200 −−
V
=2V; IC= 100 mA; note 1 150 −−
CE
V
=2V; IC= 500 mA; note 1 90 −−
CE
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−25 mV
I
= 200 mA; IB=10mA −−150 mV
C
I
= 500 mA; IB= 50 mA; note 1 −−250 mV
C
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−1.1 V
base-emitter voltage VCE=2V; IC= 100 mA; note 1 −−0.9 V
transition frequency IC= 100 mA; VCE= 5 V; f = 100 MHz 250 420 − MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz − 4.4 6 pF
Note
1. Pulsed conditions t
≤ 300 µs; δ≤0.02.
p
2000 Oct 25 3
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