Philips PBR951 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

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M3D088

PBR951

UHF wideband transistor

Product specification
Supersedes data of 1998 Jun 09
File under Discrete Semiconductors, SC14

1998 Aug 10

Philips Semiconductors Product specification

UHF wideband transistor PBR951

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.

PINNING - SOT23

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

Marking code: W2.

3

21

Fig.1 Simplified outline and symbol.

3

1

2

MAM255

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

re

f

T

G

UM

feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz 8 − GHz
maximum unilateral power gain IC= 30 mA; VCE=6V; T

amb

=25°C;

14 − dB

f=1GHz

F noise figure Γ

= Γ

S

; IC= 5 mA; VCE=6V;

opt

1.3 − dB

f=1GHz
P
R

tot
th j-s

total power dissipation Ts=60°C; note 1 − 365 mW
thermal resistance from junction to

P

= 365 mW − 315 K/W

tot

soldering point

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1998 Aug 10 2

Philips Semiconductors Product specification

UHF wideband transistor PBR951

LIMITING VALUES

In accordance with the Absolute Maximum Rating System IEC 134.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
collector current (DC) − 100 mA
average collector current − 100 mA
total power dissipation Ts=60°C; note 1 − 365 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction

P

= 365 mW; Ts=60°C; note 1 315 K/W

tot

to soldering point; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

1998 Aug 10 3

Philips Semiconductors Product specification

UHF wideband transistor PBR951

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

AC characteristics

C

re

f

T

G

UM

F noise figure Γ

collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown

IC= 100 µA; IB=0 10 −−V

voltage
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB= 10 V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200

= 15 mA; VCE=6V − 100 −

I

C

feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz − 8 − GHz
maximum unilateral power gain;

note 1

IC= 30 mA; VCE=6V;
T

=25°C; f = 1 GHz

amb

I

= 30 mA; VCE=6V;

C

T

=25°C; f = 2 GHz

amb

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 14 − dB

− 8 − dB

− 1.3 − dB

f=1GHz

Γ

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 2 − dB

f=2GHz

Note

1. G

is the maximum unilateral power gain, assuming S12 is zero.

UM

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dBlog=

2

22

1998 Aug 10 4

Philips Semiconductors Product specification

UHF wideband transistor PBR951

150

MDA887

Ts (°C)

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100

Fig.2 Power derating as a function of soldering

point temperature.

200

120

handbook, halfpage

h

FE

80

40

0

0

VCE=6V.

10 50

20 30 40

MDA888

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

0.8

handbook, halfpage

C

re

(pF)

0.6

0.4

0.2

0

04812

IC= 0; f= 1 MHz.

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MDA889

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

01020

VCE= 6 V; f = 1 GHz; T

amb

=25°C.

30

Fig.5 Transition frequency as a function of

collector current; typical values.

MDA890

IC (mA)

40

1998 Aug 10 5