Philips PBR951 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D088
PBR951
UHF wideband transistor
Product specification
Supersedes data of 1998 Jun 09
File under Discrete Semiconductors, SC14
1998 Aug 10
Philips Semiconductors Product specification
UHF wideband transistor PBR951
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING - SOT23
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Marking code: W2.
3
21
Fig.1 Simplified outline and symbol.
3
1
2
MAM255
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
re
f
T
G
UM
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz 8 − GHz
maximum unilateral power gain IC= 30 mA; VCE=6V; T
amb
=25°C;
14 − dB
f=1GHz
F noise figure Γ
= Γ
S
; IC= 5 mA; VCE=6V;
opt
1.3 − dB
f=1GHz
P
R
tot
th j-s
total power dissipation Ts=60°C; note 1 − 365 mW
thermal resistance from junction to
P
= 365 mW − 315 K/W
tot
soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1998 Aug 10 2
Philips Semiconductors Product specification
UHF wideband transistor PBR951
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
collector current (DC) − 100 mA
average collector current − 100 mA
total power dissipation Ts=60°C; note 1 − 365 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
P
= 365 mW; Ts=60°C; note 1 315 K/W
tot
to soldering point; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10 3
Philips Semiconductors Product specification
UHF wideband transistor PBR951
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
AC characteristics
C
re
f
T
G
UM
F noise figure Γ
collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown
IC= 100 µA; IB=0 10 −−V
voltage
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB= 10 V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200
= 15 mA; VCE=6V − 100 −
I
C
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz − 8 − GHz
maximum unilateral power gain;
note 1
IC= 30 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
I
= 30 mA; VCE=6V;
C
T
=25°C; f = 2 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 14 − dB
− 8 − dB
− 1.3 − dB
f=1GHz
Γ
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 2 − dB
f=2GHz
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero.
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dBlog=
2
22
1998 Aug 10 4
Philips Semiconductors Product specification
UHF wideband transistor PBR951
150
MDA887
Ts (°C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100
Fig.2 Power derating as a function of soldering
point temperature.
200
120
handbook, halfpage
h
FE
80
40
0
0
VCE=6V.
10 50
20 30 40
MDA888
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
04812
IC= 0; f= 1 MHz.
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MDA889
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020
VCE= 6 V; f = 1 GHz; T
amb
=25°C.
30
Fig.5 Transition frequency as a function of
collector current; typical values.
MDA890
IC (mA)
40
1998 Aug 10 5
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