Philips pbr941b Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage

M3D088

PBR941B

UHF wideband transistor

Preliminary specification 2001 Jan 18

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

PINNING SOT23

PIN DESCRIPTION

1base
2 emitter
3 collector

• Gold metallization ensures excellent reliability.

APPLICATIONS

handbook, halfpage

3

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar

Marking code: LBp

Fig.1 Simplified outline (SOT23).

12

MSB003Top view

detectors, pagers and satellite TV-tuners.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

f

T

G

UM

NF noise figure Γ

feedback capacitance IC=0; VCB=6V; f=1MHz − 0.3 − pF
transition frequency IC=15mA; VCE=6V; fm=1GHz 7 9 − GHz
maximum unilateral power gain IC=15mA; VCE=6V;

T

=25°C; f = 1 GHz

amb

= Γ

S

; IC=5mA; VCE=6V;

opt

− 16 − dB

− 1.5 2.5 dB

f=1GHz
P
R

tot

th j-s

total power dissipation Ts=60°C; note 1 −−360 mW
thermal resistance from junction

−−320 K/W

to soldering point

Note

1. T

is the temperature at the soldering point of the collector pin.

s

2001 Jan 18 2

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
collector current (DC) − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 360 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 320 K/W

2001 Jan 18 3

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

BEF

I

CBO

I

EBO

h

FE

AC characteristics

C

re

f

T

2

|s

|

21

G

UM

NF noise figure Γ

collector-base breakdown voltage IC=100µA; IE=0 20 −−V
collector-emitter breakdown

IC=100µA; IB=0 10 −−V

voltage
emitter-base breakdown voltage IE=10µA; IC=0 1.5 −−V
forward base-emitter voltage IE=25mA −−1.05 V
collector-base leakage current VCB=10V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC=5mA; VCE= 6 V 100 150 200

=15mA; VCE=6V − 150 −

I

C

feedback capacitance IC=0; VCB=6V; f=1MHz − 0.3 − pF
transition frequency IC=15mA; VCE=6V; fm=1GHz 7 9 − GHz
insertion gain IC=15mA; VCE= 6 V; f = 1 GHz 13 15 − dB
maximum unilateral power gain;

note 1

IC=15mA; VCE=6V;
T

=25°C; f = 1 GHz

amb

I

=15mA; VCE=6V;

C

=25°C; f = 2 GHz

T

amb

= Γ

S

; IC=5mA; VCE=6V;

opt

− 16 − dB

− 10 − dB

− 1.5 2.5 dB

f=1GHz

= Γ

Γ

S

; IC=5mA; VCE=6V;

opt

− 2.1 − dB

f=2GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

G

UM

--------------------------------------------------------

10

1s

–()1s

2

s

21

2

11

–()

22

dBlog=

2

2001 Jan 18 4

Philips Semiconductors Preliminary specification

handbook, halfpage

0 50 100

Ts (°C)

P

tot

(mW)

200

400

300

100

0

200

150

MDA871

Fig.2 Power derating as a function of soldering

point temperature.

handbook, halfpage

04 12

0.5

0

0.4

MGS498

8

0.3

0.2

0.1

VCB (V)

C

re

(pF)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

IC=Ic=0; f=1MHz.

UHF wideband transistor PBR941B

160

handbook, halfpage

h

FE

120

70

40

0

0

VCE=6V.

10 50

20 30 40

MCD974

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

VCE=6V; fm=1GHz; T

10 20 30 40

050

=25 °C.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

MCD975

IC (mA)

2001 Jan 18 5

Philips Semiconductors Preliminary specification

handbook, halfpage

01020 40

gain
(dB)

G

UM

MSG

20

0

16

MGS500

30

12

8

4

IC (mA)

G

max

Fig.6 Gain as a function of collector current;

typical values.

f=1GHz; VCE=6V.
G

UM

= maximum unilateral power gain.
MSG = maximum stable gain.
G

max

= maximum available gain.

handbook, halfpage

50

0

MGR502

10

2

10

3

10

4

10

20

30

40

gain
(dB)

f (MHz)

G

UM

MSG

G

max

Fig.8 Gain as a function of frequency; typical

values.

IC=15mA; VCE=6V.
G

UM

= maximum unilateral power gain.
MSG = maximum stable gain.
G

max

= maximum available gain.

UHF wideband transistor PBR941B

50

handbook, halfpage

gain

MGS501

(dB)

40

G

UM

30

MSG

20

G

10

0

2

10

IC=5mA; VCE=6V.

= maximum unilateral power gain.

G

UM

MSG = maximum stable gain.

= maximum available gain.

G

max

10

max

3

f (MHz)

Fig.7 Gain as a function of frequency; typical

values.

4

10

2001 Jan 18 6

50

handbook, halfpage

gain

MGS503

(dB)

40

30

20

MSG

G

UM

G

max

10

0

2

10

IC=30 mA; VCE=6V.

= maximum unilateral power gain.

G

UM

MSG = maximum stable gain.

= maximum available gain.

G

max

3

10

f (MHz)

4

10

Fig.9 Gain as a function of frequency; typical

values.

Philips Semiconductors Preliminary specification

handbook, halfpage

4

0

2

3

1

MGS504

NF

(dB)

(2)

(3)

(1)

(5)
(6)

(4)

10

−1

11010

2

IC (mA)

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE=6V.
(1) f = 2 GHz.
(2) f = 1.5 GHz.
(3) f = 1 GHz.

(4) f = 900 MHz.
(5) f = 800 MHz.
(6) f = 500 MHz.

UHF wideband transistor PBR941B

NF

(dB)

4

(1)

handbook, halfpage

3

(2)

2

(3)

1

0

2

10

3

10

f (MHz)

VCE=6V.
(1) I

=30mA.

C

(2) I

=15mA.

C

(3) I

=5mA.

C

Fig.11 Minimum noise figure as a function of

frequency; typical values.

MGS505

4

10

2001 Jan 18 7

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

handbook, full pagewidth

f=1GHz; VCE=6V;

=5mA; Zo=50Ω.

I

C

(1) G = 17 dB.
(2) G = 16 dB.
(3) G = 15 dB.
(4) NF = 1.6 dB.
(5) NF = 1.8 dB.
(6) NF = 2 dB.

unstable region

source

135

°

+0.5

90

+1

°

region load

+2

unstable

45

°

1.0

0.8

0.6

0.4

0.2

0

°

0

180

+0.2

(1)

°

0

0.5 1

(2)

(3)

−0.2

−0.5

−135

°

Γopt

2 5

(5)

(6)

(4)

−2

−45

+5

−5

°

−1

1.0

−90

°

MGS506

Fig.12 Common emitter available gain, noise and stability circles; typical values.

handbook, full pagewidth

unstable region

f=2GHz; VCE=6V; IC=5mA;

=50Ω.

Z

o

(1) G
(2) G = 10 dB.
(3) G = 9 dB.
(4) G = 8 dB.
(5) NF = 2.1 dB.
(6) NF = 2.3 dB.
(7) NF = 2.5 dB.

=10.9dB.

max

Fig.13 Common emitter available gain, noise and stability circles; typical values.

source

180

135°

90°

+1

+0.5

+2

unstable

region load

45°

1.0

0.8

0.6

+0.2

+5

Γopt

(1)

°

0

0.2

0.5

(2)

−0.2

(3)

(4)

−0.5

−135°

1

(5)

(6)

(7)

2

5

−5

−2

−45°

0.4

0.2

0°

0

−1

1.0

−90°

MGS507

2001 Jan 18 8

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

handbook, full pagewidth

VCE=6V; IC=15mA; Zo=50Ω.

90°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180°

135°

+0.5

+0.2

0.2 0.5 1

0

−0.2

−135°

−0.5

3 GHz

500 MHz

+1

2 GHz

1 GHz

−1

−90°

200 MHz

2

100 MHz

+2

−2

45°

+5

5

−5

−45°

MGS508

Fig.14 Common emitter input reflection coefficient (s11); typical values.

handbook, full pagewidth

VCE=6V; IC=15mA.

90°

135°

100 MHz

180

°

50 40 30 20 10

−135°

200 MHz

500 MHz

1 GHz
2 GHz
3 GHz

−90°

45°

0°

−45°

MGS509

Fig.15 Common emitter forward transmission coefficient (s21); typical values.

2001 Jan 18 9

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

handbook, full pagewidth

VCE=6V; IC=15mA.

90°

135°

180

°

0.5 0.4 0.3 0.2 0.1

−135°

3 GHz

2 GHz

1 GHz

500 MHz
200 MHz
100 MHz

−90°

45°

0°

−45°

MGS510

Fig.16 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

VCE=6V; IC=15mA; Zo=50Ω.

90

°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180

+1

135°

+0.5

+0.2

°

0.2 0.5 1

0

−0.2

−135°

−0.5

−1

−90°

2

1 GHz

2 GHz

3 GHz

+2

5

500 MHz

200 MHz

−2

45°

+5

100 MHz

−5

−45°

MGS511

Fig.17 Common emitter output reflection coefficient (s22); typical values.

2001 Jan 18 10

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

012 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

1

0.95

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2001 Jan 18 11

Philips Semiconductors Preliminary specification

UHF wideband transistor PBR941B

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2001 Jan 18 12

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71

Printed in The Netherlands 603508/03/pp13 Date of release: 2001 Jan 18 Document order number: 9397 750 07945