Philips pbr941 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ok, halfpage

M3D088

PBR941

UHF wideband transistor

Product specification
Supersedes data of 1998 May 08
File under Discrete Semiconductors, SC14

1998 Aug 10

Philips Semiconductors Product specification

UHF wideband transistor PBR941

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.

QUICK REFERENCE DATA

PINNING - SOT23

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

Marking code: V0.

3

21

Fig.1 Simplified outline and symbol.

3

1

2

MAM255

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

re

f

T

G

UM

F noise figure Γ

feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz 8 − GHz
maximum unilateral power gain IC= 15 mA; VCE= 6 V; f = 1 GHz;

T

=25°C

amb

= Γ

S

; IC= 5 mA; VCE=6V;

opt

15 − dB

1.4 − dB

f = 1 GHz
P
R

tot
th j-s

total power dissipation Ts=60°C; note 1 − 360 mW
thermal resistance from junction

P

= 360 mW − 320 K/W

tot

to soldering point

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1998 Aug 10 2

Philips Semiconductors Product specification

UHF wideband transistor PBR941

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
collector current (DC) − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 360 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction

P

= 360 mW; Ts=60°C; note 1 320 K/W

tot

to soldering point; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

1998 Aug 10 3

Philips Semiconductors Product specification

UHF wideband transistor PBR941

CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

AC characteristics

C

re

f

T

G

UM

F noise figure Γ

collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 100 µA; IB=0 10 −−V
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB=10V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200

I

= 15 mA; VCE=6V − 100 −

C

feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE= 6 V; f = 1 GHz − 8 − GHz
maximum unilateral power gain;

note 1

IC= 15 mA; VCE=6V;

T

=25°C; f = 1 GHz

amb

I

= 15 mA; VCE=6V;

C

T

=25°C; f = 2 GHz

amb

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 15 − dB

− 9.5 − dB

− 1.4 − dB

f = 1 GHz

Γ

= Γ

S

; IC= 5 mA; VCE=6V;

opt

− 2 − dB

f = 2 GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dBlog=

2

22

1998 Aug 10 4

Philips Semiconductors Product specification

UHF wideband transistor PBR941

150

MDA871

Ts (°C)

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

0 50 100

Fig.2 Power derating as a function of soldering

point temperature.

200

120

handbook, halfpage

h

FE

80

40

0

0

VCE=6V.

10 50

20 30 40

MDA872

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

0.5

handbook, halfpage

C

re

(pF)

0.4

0.3

0.2

0.1

0

04

IC= 0; f= 1 MHz.

812

V

CB

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MDA873

(V)

10

handbook, halfpage

f

T

(GHz)

8

6

4

2

0

01020

VCE= 6 V; f = 1 GHz; T

amb

=25°C.

30

Fig.5 Transition frequency as a function of

collector current; typical values.

MDA874

IC (mA)

40

1998 Aug 10 5

Philips Semiconductors Product specification

UHF wideband transistor PBR941

20

handbook, halfpage

gain
(dB)

MSG

16

12

8

4

0

01020

f = 1 GHz; VCE=6V.

G

max

G

UM

30

IC (mA)

Fig.6 Gain as a function of collector current;

typical values.

MDA875

G

max

f (MHz)

MDA876

MSG

4

10

50

handbook, halfpage

gain
(dB)

40

MSG

30

20

10

40

0

10

IC= 5 mA; VCE=6V.

G

UM

2

10

3

10

Fig.7 Gain as a function of frequency; typical

values.

50

handbook, halfpage

gain
(dB)

40

MSG

30

20

10

0

10

IC= 15 mA; VCE=6V.

G

UM

G

max

2

10

3

10

f (MHz)

Fig.8 Gain as a function of frequency; typical

values.

MDA877

MSG

G

max

f (MHz)

MDA878

MSG

4

10

50

handbook, halfpage

gain
(dB)

40

MSG

30

20

10

4

10

0

10

IC= 30 mA; VCE=6V.

G

UM

2

10

3

10

Fig.9 Gain as a function of frequency; typical

values.

1998 Aug 10 6

Philips Semiconductors Product specification

UHF wideband transistor PBR941

handbook, halfpage

4

F

(dB)

3

2

1

0

−1

10

VCE=6V.
(1) f = 2000 MHz.
(2) f = 1000 MHz.

(1)

(2)

(3)(4)

110

(3) f = 500 MHz.
(4) f = 900 MHz.

IC (mA)

Fig.10 Minimum noise figure as a function of

collector current, typical values.

MDA879

f (MHz)

MDA880

4

10

handbook, halfpage

2

10

4

F

(dB)

3

2

1

0

2

10

VCE=6V.
(1) IC=30mA.

(1)

(2)

(3)

3

10

(2) IC=15mA.
(3) IC= 5 mA.

Fig.11 Minimum noise figure as a function of

frequency, typical values.

1998 Aug 10 7

Philips Semiconductors Product specification

UHF wideband transistor PBR941

APPLICATION INFORMATION
SPICE parameters for the PBR941 die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 0.466 fA
2 BF 150.4 −
3 NF 1.000 −
4 VAF 53.06 V
5 IKF 180.0 mA
6 ISE 57.30 fA
7 NE 2.000 −
8 BR 27.68 −
9 NR 1.000 −
10 VAR 1.976 V
11 IKR 9.943 mA
12 ISC 1.420 aA
13 NC 1.000 −
14 RB 12.14 Ω
15 IRB 0.000 µA
16 RBM 4.957 Ω
17 RE 0.597 Ω
18 RC 1.988 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 0.568 pF
23 VJE 600.0 mV
24 MJE 0.412 −
25 TF 2.037 ps
26 XTF 30.90 −
27 VTF 3.148 V
28 ITF 131.8 mA
29 PTF 0.000 deg
30 CJC 205.8 fF
31 VJC 296.2 mV
32 MJC 0.118 −
33 XCJC 0.104 −
34 TR 0.000 ps
35
36
37

(1)
(1)
(1)

CJS 0.000 F

VJS 700.0 mV

MJS 0.000 −
38 FC 0.943 −

SEQUENCE No. PARAMETER VALUE UNIT

39
40

(2)
(2)

C

bpb

C

bpe

83.00 fF

84.00 fF
41 AF 1.000 −
42 KF 4 x 10

−16

−

Notes

1. These parameters have not been extracted, the
default values are shown.

2. C

bpb

, C

; base-bondpad and emitter-bondpad

bpe

capacitance to collector.

B

(f)=QL

B,E

C

cb

E'

L

E

L3

E

√(f/fc);

B,E

C

MBC964

handbook, halfpage

L1 L2

B

C

be ce

QLB= 50; QLE= 50; QL

= scaling frequency = 1 GHz.

f

c

L

Fig.12 Package equivalent circuit SOT23.

List of components (see Fig.12)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

7fF
80 fF

80 fF
L1 0.35 nH
L2 0.17 nH
L3 0.35 nH
L

B

L

E

0.40 nH

0.83 nH

CB' C'

1998 Aug 10 8

Philips Semiconductors Product specification

UHF wideband transistor PBR941

handbook, full pagewidth

VCE= 6 V; IC= 15 mA; Zo=50Ω.

90°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180°

0

135°

0.2

0.2

−135°

1

0.5

3 GHz

2 GHz

0.50.2 1 2 5
1 GHz

500 MHz

200 MHz

0.5

1

−90°

2

100 MHz

2

45°

5

40 MHz

5

−45°

MDA881

Fig.13 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

VCE= 6 V; IC= 15 mA.

90°

135°

100 MHz

40 MHz

50 40 30 20 10

180°

−135°

200 MHz

−90°

500 MHz
1 GHz
2 GHz

3 GHz

45°

0°

−45°

MDA882

Fig.14 Common emitter forward transmission coefficient (S21); typical values.

1998 Aug 10 9

Philips Semiconductors Product specification

UHF wideband transistor PBR941

handbook, full pagewidth

VCE= 6 V; IC= 15 mA.

90°

135°

0.5 0.4 0.3 0.2 0.1

180°

−135°

40 MHz

−90°

3 GHz

2 GHz

1 GHz

500 MHz

200 MHz

45°

0°

−45°

MDA883

Fig.15 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

VCE= 6 V; IC= 15 mA; Zo=50Ω.

90°

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

180°

0

135°

0.2

0.2

−135°

1

0.5

0.50.2 1 2 5

3 GHz

0.5

1

−90°

2 GHz

2

1 GHz

500 MHz

200 MHz

2

45°

5

40 MHz

100 MHz

5

−45°

MDA884

Fig.16 Common emitter output reflection coefficient (S22); typical values.

1998 Aug 10 10

Philips Semiconductors Product specification

UHF wideband transistor PBR941

handbook, full pagewidth

90°

2

unstable

region load

45°

1.0

0.8

0.6

unstable

region source

135°

1

0.5

180°

f = 1 GHz; VCE= 6 V; IC= 5 mA; Zo=50Ω.

Fig.17 Common emitter available gain circles; typical values.

handbook, full pagewidth

unstable

region source

0.2

0.2

−135°

135°

G = 16 dB

G = 15 dB

G = 14 dB

0.5

0.5

Γ

OPT

0.50.2 1 2 5
NF = 1.5 dB

NF = 1.7 dB
NF = 1.9 dB

1

−90°

90°

1

G

= 10.26 dB

max

2

2

5

5

−45°

MDA885

unstable
region load

45°

0.4

0.2

0°

0

1.0

1.0

0.8

0.6

0.2

Γ

OPT

NF = 2.1 dB

NF = 2.3 dB

NF = 2.5 dB

−90°

180°

f = 2 GHz; VCE= 6 V; IC= 5 mA; Zo=50Ω.

0

0.2 0.5 1 2 5

G = 10 dB

0.2
G = 9 dB

G = 8 dB

−135°

0.5

Fig.18 Common emitter available gain circles; typical values.

1998 Aug 10 11

5

5

2

−45°

1

MDA886

0.4

0.2

0°

0

1.0

Philips Semiconductors Product specification

UHF wideband transistor PBR941

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

1

UNIT

mm

A

1.1

0.9

OUTLINE
VERSION

SOT23

max.

1998 Aug 10 12

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

UHF wideband transistor PBR941

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Aug 10 13

Philips Semiconductors Product specification

UHF wideband transistor PBR941

NOTES

1998 Aug 10 14

Philips Semiconductors Product specification

UHF wideband transistor PBR941

NOTES

1998 Aug 10 15

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 125104/1200/05/pp16 Date of release: 1998 Aug10 Document order number: 9397 75004136