Philips pbls6022d Datasheet

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

Rev. 01 — 13 August 2009 Product data sheet

1. Product profile

1.1 General description

PNP low V

Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

CEsat

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.

1.2 Features

n Low V
n Low threshold voltage (<1 V) compared to MOSFET
n Space-saving solution
n Reduction of component count
n AEC-Q101 qualified

(BISS) and resistor-equipped transistor in one package

CEsat

1.3 Applications

n Supply line switches
n Battery charger switches
n High-side switches for LEDs, drivers and backlights
n Portable equipment

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

V

CEO

I

C

I

CM

R

CEsat

TR2; NPN resistor-equipped transistor

V

CEO

I

O

R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2

collector-emitter voltage open base - - −60 V
collector current - - −1.5 A
peak collector current single pulse;

collector-emitter saturation
resistance

collector-emitter voltage open base - - 50 V
output current - - 100 mA

CEsat

transistor

t

≤ 1ms

p

IC= −1.5 A;
I

= −100 mA

B

--−3A

[1]

- 110 175 mΩ

[1] Pulse test: tp≤ 300µs; δ≤0.02.

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 base TR1
2 input (base) TR2
3 output (collector) TR2
4 GND (emitter) TR2
5 collector TR1
6 emitter TR1

3. Ordering information

Table 3. Ordering information

Type number Package

PBLS6022D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

4

56

132

Name Description Version

654

R2

TR1

1

TR2

R1

23

006aab506

4. Marking

Table 4. Marking codes

Type number Marking code

PBLS6022D KF

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 2 of 16

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

TR1; PNP low V

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

tot

TR2; NPN resistor-equipped transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

transistor

CEsat

collector-base voltage open emitter - −60 V
collector-emitter voltage open base - −60 V
emitter-base voltage open collector - −5V
collector current - −1.5 A
peak collector current single pulse;

t

≤ 1ms

p

base current - −300 mA
peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage

positive - +30 V

negative - −10 V
output current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

- −3A

- −1A

[1]

- 370 mW

[2]

- 480 mW

[3]

- 630 mW

- 100 mA

[1][2]

- 200 mW

[3]

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 3 of 16

total power dissipation T

junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

amb

≤ 25 °C

[1]

- 480 mW

[2]

- 590 mW

[3]

- 760 mW

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint

Fig 1. Per device: Power derating curves

6. Thermal characteristics

1000

P

tot

(mW)

800

600

400

200

0

−75 17512525 75−25

006aab507

(1)

(2)

(3)

T

(°C)

amb

2

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

thermal resistance from

in free air

[1]

- - 260 K/W

[2]

- - 211 K/W

[3]

- - 165 K/W

- - 100 K/W

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 4 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

006aab508

2

10

tp (s)

10

Z

th(j-a)

(K/W)

10

3

10

δ = 1

0.75

0.50

2

10

10

1

−1

−5

10

0.20

0.05

0.01

0

0.33

0.10

0.02

10

−4

−3

10

−2

−1

10

1

1010

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab509

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

2

10

10

1

0.33

0.20

0.10

0.05

0.02

0.01
0

3

−1

10

−5

10

−4

10

−3

10

FR4 PCB, mounting pad for collector 1 cm

−2

2

−1

10

1

1010

2

10

tp (s)

3

10

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 5 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

3

10

Z

th(j-a)

(K/W)

10

δ = 1

0.50

0.20

0.05

0.01
0

0.75

0.33

0.10

0.02

10

−4

2

10

10

1

−1

−5

10

Ceramic PCB, Al2O3, standard footprint

−3

10

−2

−1

10

1

1010

006aab510

2

10

tp (s)

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

7. Characteristics

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

I

CBO

collector-base cut-off
current

I

CES

collector-emitter
cut-off current

I

EBO

emitter-base cut-off
current

h

V

FE

CEsat

DC current gain VCE= −2 V; IC= −100 mA 180 285 -

collector-emitter
saturation voltage

R

CEsat

collector-emitter
saturation resistance

V

BEsat

base-emitter
saturation voltage

CEsat

transistor

VCB= −60 V; IE=0A - - −100 nA

= −60 V; IE=0A;

V

CB

T

= 150 °C

j

--−50 µA

VCE= −48 V; VBE=0A - - −100 nA

VEB= −5 V; IC=0A - - −100 nA

= −2 V; IC= −500 mA

V

CE

= −2 V; IC= −1A

V

CE

= −2 V; IC= −1.5 A

V

CE

IC= −0.5 A; IB= −50 mA

= −1 A; IB= −50 mA

I

C

= −1 A; IB= −100 mA

I

C

= −1.5 A; IB= −100 mA

I

C

IC= −1 A; IB= −100 mA

= −1.5 A; IB= −100 mA

I

C

IC= −0.5 A; IB= −50 mA

= −1.5 A; IB= −100 mA

I

C

[1]

150 255 -

[1]

140 210 -

[1]

120 185 -

[1]

- −65 −100 mV

[1]

- −130 −200 mV

[1]

- −110 −170 mV

[1]

- −165 −260 mV

[1]

- 110 170 mΩ

[1]

- 110 175 mΩ

[1]

- −0.85 −1V

[1]

- −0.93 −1.1 V

3

10

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 6 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

V

BEon

base-emitter

VCE= −10 V; IC= −1A

[1]

- −0.75 −1.1 V

turn-on voltage

t

d

t

r

t

on

t

s

t

f

t

off

f

T

delay time VCC= −10 V; IC= −1A;

I

= −50 mA;

rise time - 38 - ns
turn-on time - 55 - ns

I

Bon
Boff

=50mA

-17-ns

storage time - 350 - ns
fall time - 65 - ns
turn-off time - 415 - ns
transition frequency IC= −50 mA; VCE= −10 V;

- 150 - MHz

f = 100 MHz

C

c

collector capacitance VCB= −10 V; IE=ie=0A;

-30-pF

f=1MHz

TR2; NPN resistor-equipped transistor

I

CBO

collector-base cut-off

VCB=50V; IE= 0 A - - 100 nA

current

I

CEO

I

EBO

collector-emitter
cut-off current

emitter-base cut-off

VCE=30V; IB=0A --1µA

=30V; IB=0A;

V

CE

T

= 150 °C

j

--50µA

VEB=5V; IC= 0 A - - 900 µA

current
h
V

FE

CEsat

DC current gain VCE=5V; IC=10mA 30 - -

collector-emitter

IC= 10 mA; IB= 0.5 mA - - 150 mV

saturation voltage
V

I(off)

V

I(on)

off-state input voltage VCE=5V; IC= 100 µA - 1.1 0.5 V

on-state input voltage VCE= 0.3 V; IC= 20 mA 2.5 1.9 - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C

c

collector capacitance VCB=10V; IE=ie=0A;

- - 2.5 pF

f=1MHz

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 7 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

600

h

FE

(1)

400

(2)

200

0

−10

−1

(3)

−1 −10

−10

006aab523

(mA)

C

−10

4

−10

3

I

2

VCE= −2V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values

−3

I

C

(A)

−2

−1

0

0.0 −2.0−1.5−0.5 −1.0

T

=25°C

amb

IB (mA) = −30

006aab524

−24

−18

−12

−6

VCE (V)

−27

−21

−15

−9

−3

Fig 6. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

006aab525

(mA)

C

−10

4

−10

3

I

2

V

(V)

−1.2

BE

−1.0

−0.8

−0.6

−0.4

−0.2

−10

−1

−1 −10

(1)

(2)

(3)

−10

VCE= −2V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

006aab526

3

−10
I

(mA)

C

−10

4

V

−1.2

BEsat

(V)

−1.0

−0.8

−0.6

−0.4

−0.2

−10

−1

−1 −10

(1)

(2)

(3)

−10

2

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 8 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

006aab527

−10

3

IC (mA)

−10

2

V

CEsat

(V)

−10

−10

−1

−1

−2

−10

−1

−1 −10

(1)
(2)

(3)

−10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 9. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

−1

V

CEsat

(V)

−1

−10

−2

4

−10

−10

T

−1

amb

=25°C

(1)

(2)

(3)

−1 −10

−10

006aab528

−10

3

IC (mA)

2

−10

4

(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10

Fig 10. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;
typical values

006aab529

(1)
(2)
(3)

−10

3

IC (mA)

−10

2

R

10

CEsat

(Ω)

10

10

10

10

−1

−2

−10

3

2

1

−1

−1 −10

−10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 11. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

3

10

R

CEsat

(Ω)

2

10

10

1

−1

10

−2

4

10

−10

−1

−1 −10

T

=25°C

amb

−10

2

006aab530

3

−10
IC (mA)

(1)

(2)

(3)

4

−10

(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;
typical values

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 9 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

3

10

h

FE

2

10

10

1

−1

10

006aaa030

(1)
(2)
(3)

2

101

IC (mA)

10

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values

10

006aaa032

10

006aaa033

V

I(on)

(V)

(1)

(2)

1

(3)

−1

10

−1

10

101

IC (mA)

10

VCE= 0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 14. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

V

I(off)

(V)

(1)

1

−1

2

10

10

(2)

(3)

−2

−1

IC (mA)

10110

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 15. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 10 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

1

V

CEsat

(V)

−1

10

−2

10

110

(1)
(2)
(3)

10

006aaa031

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 16. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

1

V

CEsat

(V)

−1

2

10

10 10

IC/IB= 50; T

amb

=25°C

006aab520

2

IC (mA)

Fig 17. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;
typical values

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 11 of 16

NXP Semiconductors

8. Test information

−

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

I

B

90 %

10 %

−

90 %

10 %

input pulse
(idealized waveform)

−

I

(100 %)

Bon

−

I

Boff

output pulse

I

C

t

t

d

r

t

on

t

s

t

off

(idealized waveform)

−

IC (100 %)

t

t

f

006aaa266

Fig 18. TR1: BISS transistor switching time definition

oscilloscope

V

I

VCC= −10 V; IC= −1 A; I

(probe)

450 Ω

Bon

R

R2

R1

= −50 mA; I

V

B

BB

Boff

V

CC

R

C

=50mA

DUT

V

o

(probe)

mgd624

450 Ω

oscilloscope

Fig 19. TR1: Test circuit for switching times

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
suitable for use in automotive applications.

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 12 of 16

Q101 - Stress test qualification for discrete semiconductors

, and is

NXP Semiconductors

9. Package outline

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

Fig 20. Package outline SOT457 (SC-74)

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PBLS6022D SOT457 4 mm pitch, 8 mm tape and reel; T1

3.1

2.7

56

3.0

1.7

2.5

1.3

pin 1 index

132

0.95

1.9

4 mm pitch, 8 mm tape and reel; T2

1.1

0.9

4

0.6

0.2

[1]

0.26

0.10

04-11-08Dimensions in mm

0.40

0.25

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, seeSection 13.
[2] T1: normal taping
[3] T2: reverse taping

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 13 of 16

NXP Semiconductors

60 V, 1.5 A PNP BISS loadswitch

PBLS6022D

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBLS6022D_1 20090813 Product data sheet - -

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 14 of 16

NXP Semiconductors

12. Legal information

12.1 Data sheet status

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document may havechanged since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall havenoliabilityforthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied uponto containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not giveany representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces allinformation supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) maycause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implicationof any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PBLS6022D_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 August 2009 15 of 16

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 12

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

10 Packing information. . . . . . . . . . . . . . . . . . . . . 13

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 13 August 2009

Document identifier: PBLS6022D_1