Philips pbls2001d Datasheet

PBLS2001D

20 V PNP BISS loadswitch

Rev. 02 — 27 August 2009 Product data sheet

1. Product profile

1.1 General description

PNP low V

Breakthrough in Small Signal (BISS) transistor and NPN Resistor-

CEsat

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.

1.2 Features

n Low V
n Low threshold voltage (< 1 V) compared to MOSFET
n Low drive power required
n Space-saving solution
n Reduction of component count

(BISS) and resistor-equipped transistor in one package

CEsat

1.3 Applications

n Supply line switches
n Battery charger switches
n High-side switches for LEDs, drivers and backlights
n Portable equipment

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

V

CEO

I

C

R

CEsat

TR2; NPN resistor-equipped transistor

V

CEO

I

O

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2

collector-emitter voltage open base - - −20 V
collector current (DC) - - −1A
collector-emitter saturation

resistance

collector-emitter voltage open base - - 50 V
output current - - 100 mA

CEsat

transistor

IC= −1A;
I

= −100 mA

B

[1]

- 185 280 mΩ

[1] Pulse test: tp≤ 300 µs; δ≤0.02

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 emitter TR1
2 base TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 collector TR1

3. Ordering information

Table 3. Ordering information

Type number Package

PBLS2001D SC-74 plastic surface mounted package; 6 leads SOT457

PBLS2001D

20 V PNP BISS loadswitch

4

56

132

Name Description Version

65 4

R2

R1

TR1

1

23

TR2

sym036

4. Marking

Table 4. Marking codes

Type number Marking code

PBLS2001D F6

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

TR1; PNP low V

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

tot

transistor

CEsat

collector-base voltage open emitter - −20 V
collector-emitter voltage open base - −20 V
emitter-base voltage open collector - −5V
collector current (DC) - −1A
peak collector current tp≤ 300 µs-−2A
base current (DC) - −0.3 A
peak base current tp≤ 300 µs-−0.6 A
total power dissipation T

amb

≤ 25 °C

[1]

- 250 mW

[2]

- 350 mW

[3]

- 400 mW

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 2 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

TR2; NPN resistor-equipped transistor

V
V
V
V

CBO
CEO
EBO
I

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage

positive - +12 V
negative - −10 V

I

O

I

CM

P

tot

output current - 100 mA
peak collector current tp≤ 300 µs - 100 mA
total power dissipation T

amb

≤ 25 °C

[1]

- 200 mW

Per device

P

tot

T

stg

T

j

T

amb

total power dissipation

storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C

[1]

- 400 mW

[2]

- 530 mW

[3]

- 600 mW

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

0.8

P

tot

(W)

(1)

0.6

(2)

(3)

0.4

0.2

0

0 16012040 80

(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm
(3) FR4 PCB, standard footprint

2

006aaa414

T

(°C)

amb

Fig 1. Power derating curves

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 3 of 16

NXP Semiconductors

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

thermal resistance from
junction to ambient

in free air

PBLS2001D

20 V PNP BISS loadswitch

[1]

- - 315 K/W

[2]

- - 236 K/W

[3]

- - 210 K/W

006aaa415

2

10

tp (s)

3

10

Z

th(j-a)

(K/W)

10

3

10

2

10

10

1

−1

10

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

−5

−4

10

−3

10

−2

−1

10

1

1010

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 4 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

3

10

Z

th(j-a)

δ = 1

(K/W)

0.75

0.5

2

0.33

10

0.2

0.1

0.05

10

0.02

0.01

0

1

−5

10

−4

10

FR4 PCB, mounting pad for collector 1cm

−3

10

−2

2

−1

10

1

1010

006aaa463

2

10

tp (s)

3

10

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

006aaa464

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.5

2

10

0.33

0.2

0.1

0.05

10

0.02

0.01

0

1

−5

10

−4

10

−3

10

−2

−1

10

1

1010

2

10

tp (s)

3

10

Ceramic PCB, Al2O3, standard footprint

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 5 of 16

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

I

CBO

I

CES

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

t

d

t

r

t

on

t

s

t

f

t

off

f

T

C

c

PBLS2001D

20 V PNP BISS loadswitch

=25°C unless otherwise specified

transistor

CEsat

collector-base cut-off
current

collector-emitter
cut-off current

emitter-base cut-off
current

DC current gain VCE= −2 V; IC= −1 mA 220 495 -

collector-emitter
saturation voltage

collector-emitter
saturation resistance

base-emitter
saturation voltage

base-emitter
turn-on voltage

delay time IC= −1 A; I
rise time - 34 - ns
turn-on time - 42 - ns
storage time - 140 - ns
fall time - 45 - ns
turn-off time - 185 - ns
transition frequency IC= −50 mA; VCE= −10 V;

collector capacitance VCB= −10 V; IE=ie=0A;

VCB= −20 V; IE=0A - - −0.1 µA

= −20 V; IE=0A;

V

CB

T

= 150 °C

j

-- −50 µA

VCE= −20 V; VBE=0V - - −0.1 µA

VEB= −5 V; IC=0A - - −0.1 µA

= −2 V; IC= −100 mA 220 440 -

V

CE

= −2 V; IC= −500 mA

V

CE

= −2 V; IC= −1A

V

CE

= −2 V; IC= −2A

V

CE

[1]

220 310 -

[1]

155 220 -

[1]

60 120 -

IC= −100 mA; IB= −1mA - −55 −90 mV

= −500 mA; IB= −50 mA

I

C

= −1 A; IB= −50 mA

I

C

= −1 A; IB= −100 mA

I

C

IC= −1 A; IB= −100 mA

IC= −1 A; IB= −50 mA

= −1 A; IB= −100 mA

I

C

VCE= −5 V; IC= −1A

= −50 mA;

I

Boff

Bon

=50mA

[1]

- −100 −150 mV

[1]

- −200 −300 mV

[1]

- −185 −280 mV

[1]

- 185 280 mΩ

[1]

- −0.95 −1.1 V

[1]

- −1 −1.1 V

[1]

- −0.85 −1.1 V

-8 - ns

150 185 - MHz

f = 100 MHz

-1520pF

f=1MHz

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 6 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

Table 7. Characteristics

T

=25°C unless otherwise specified

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

TR2; NPN resistor-equipped transistor

I

CBO

collector-base cut-off

VCB=50V; IE= 0 A - - 100 nA

current

I

CEO

I

EBO

collector-emitter
cut-off current

emitter-base cut-off

VCE=30V; IB=0A - - 1 µA

=30V; IB=0A;

V

CE

T

= 150 °C

j

-- 50µA

VEB=5V; IC=0A - - 2 mA

current
h
V

FE

CEsat

DC current gain VCE=5V; IC=20mA 30 - -

collector-emitter

IC= 10 mA; IB= 0.5 mA - - 150 mV

saturation voltage
V

I(off)

V

I(on)

off-state input voltage VCE=5V; IC= 1 mA - 1.2 0.5 V

on-state input voltage VCE= 0.3 V; IC= 20 mA 2 1.6 - V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C

c

collector capacitance VCB=10V; IE=ie=0A;

- - 2.5 pF

f=1MHz

[1] Pulse test: tp≤ 300 µs; δ≤0.02

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 7 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

1000

h

FE

800

600

400

200

0

−10

(1)

(2)

(3)

−1

−1 −10

−10

006aaa416

(mA)

C

−10

4

−10

3

I

2

VCE= −2V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values

006aaa417

3

−10
IC (mA)

−10

V

CEsat

(V)

−10

−10

−10

−1

−1

−2

−3

−10

−1

−1 −10

−10

(1)
(2)
(3)

2

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 6. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

4

006aaa418

3

−10
I

C

(mA)

−10

4

V

(V)

−1.0

BE

−0.8

−0.6

−0.4

−0.2

−10

−1

−1 −10

−10

(1)

(2)

(3)

2

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

006aaa419

3

−10
I

C

(mA)

−10

4

V

−1.2

BEsat

(V)

−1.0

−0.8

−0.6

−0.4

−0.2

−10

−1

−1 −10

−10

(1)

(2)

(3)

2

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 100 °C

Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 8 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

−2.0

I

C

(A)

−1.6

−1.2

−0.8

−0.4

−0

−0 −6−4−2

T

amb

IB = −13 mA

=25°CI

006aaa420

−11.7 mA

−10.4 mA

−9.1 mA

−7.8 mA

−6.5 mA

−5.2 mA

−3.9 mA

−2.6 mA

−1.3 mA

VCE (V)

Fig 9. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

006aaa421

3

−10
IC (mA)

−10

R

CEsat

(Ω)

2

10

10

1

−1

10

−10

(1) T
(2) T
(3) T

−1

−1 −10

=20

C/IB

= 100 °C

amb

=25°C

amb

= −55 °C

amb

−10

(1)
(2)
(3)

2

Fig 10. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;
typical values

4

006aaa422

−10

3

IC (mA)

−10

V

CEsat

(V)

−10

−10

−10

−1

−1

−2

−3

−10

(1)
(2)

(3)

−1

−1 −10

T

=25°C

amb

−10

2

(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10

Fig 11. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;
typical values

3

10

R

CEsat

(Ω)

2

10

10

1

−1

4

10

−10

−1

−1 −10

T

=25°C

amb

−10

2

006aaa423

3

−10
IC (mA)

(1)

(2)
(3)

4

−10

(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;
typical values

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 9 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

3

10

h

FE

2

10

10

1

−1

10

006aaa015

(1)
(2)
(3)

2

101

IC (mA)

10

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 13. TR2 (NPN): DC current gain as a function of

collector current; typical values

3

10

V

CEsat

(mV)

2

10

10

110

(1)
(2)
(3)

10

006aaa014

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 14. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

2

2

10

V

I(on)

(V)

10

(1)
(2)

1

(3)

−1

10

−1

10

006aaa016

101

IC (mA)

10

VCE= 0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 15. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

10

V

I(off)

(V)

(1)
(2)

1

(3)

−1

2

10

−2

10

−1

006aaa017

IC (mA)

10110

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 16. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 10 of 16

NXP Semiconductors

8. Test information

−

PBLS2001D

20 V PNP BISS loadswitch

I

B

90 %

10 %

−

90 %

10 %

input pulse
(idealized waveform)

−

I

(100 %)

Bon

−

I

Boff

output pulse

I

C

t

t

d

r

t

on

t

s

t

off

(idealized waveform)

−

IC (100 %)

t

t

f

006aaa266

Fig 17. BISS transistor switching time definition

IC= −1 A; I

oscilloscope

V

= −50 mA; I

Bon

I

V

R

(probe)

450 Ω

= 50 mA; R1 = open; R2= 45 Ω; RB= 145 Ω; RC=10Ω

Boff

B

R2

R1

BB

V

CC

R

C

V

o

(probe)

oscilloscope

450 Ω

DUT

mgd624

Fig 18. Test circuit for switching times

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 11 of 16

NXP Semiconductors

9. Package outline

PBLS2001D

20 V PNP BISS loadswitch

Fig 19. Package outline SOT457 (SC-74)

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PBLS2001D SOT457 4 mm pitch, 8 mm tape and reel; T1

3.0

2.5

3.1

2.7

4

1.7

1.3

56

pin 1 index

132

0.95

1.9

4 mm pitch, 8 mm tape and reel; T2

0.40

0.25

0.6

0.2

[1]

1.1

0.9

0.26

0.10

04-11-08Dimensions in mm

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, seeSection 14.
[2] T1: normal taping
[3] T2: reverse taping

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 12 of 16

NXP Semiconductors

11. Soldering

3.30

2.825

0.95

3.45

1.95

1.60

1.70

3.10

3.20

PBLS2001D

20 V PNP BISS loadswitch

solder lands

solder resist

0.45 0.55
occupied area

solder paste

msc422

Dimensions in mm

Fig 20. Reflow soldering footprint

5.30

5.05

1.40

4.30

Dimensions in mm

Fig 21. Wave soldering footprint

0.45

1.45 4.45

msc423

solder lands
solder resist
occupied area

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 13 of 16

NXP Semiconductors

PBLS2001D

20 V PNP BISS loadswitch

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBLS2001D_2 20090827 Product data sheet - PBLS2001D_1
Modifications:

PBLS2001D_1 20050705 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 21 “Wave soldering footprint”: updated

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 14 of 16

NXP Semiconductors

13. Legal information

13.1 Data sheet status

PBLS2001D

20 V PNP BISS loadswitch

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referencedbrands,product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PBLS2001D_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 27 August 2009 15 of 16

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Packing information. . . . . . . . . . . . . . . . . . . . . 12

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

14 Contact information. . . . . . . . . . . . . . . . . . . . . 15

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

PBLS2001D

20 V PNP BISS loadswitch

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 27 August 2009

Document identifier: PBLS2001D_2