INTEGRATED CIRCUITS
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product data
Supersedes data of 1997 Sep 29
2001 Aug 03
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
FEA TURES
•Small-signal bandwidth: 10 MHz
•Output drive capability: 600 Ω, 10 V
•Input noise voltage: 5 nV/√Hz (typical)
•DC voltage gain: 50000
•AC voltage gain: 2200 at 10 kHz
•Power bandwidth: 140 kHz
•Slew rate: 9 V/µs
•Large supply voltage range: ±3 to ±20 V
•Compensated for unity gain
RMS
NE/SA/SE5532/5532A
PIN CONFIGURATIONS
N, D8 Packages
OUTPUT A
INVERTING INPUT A
NON-INVERTING INPUT A
NOTE:
1. SOL and non-standard pinout.
1
2
3
V-
D Package
–IN
1
A
2
+IN
A
3
NC
4
–V
CC
5
NC
6
NC
7
+IN
B
8
–IN
B
Figure 1. Pin Configurations
A
B
TOP VIEW
TOP VIEW
8
V+
7
OUTPUT B
6
INVERTING INPUT B
54
NON-INVERTING INPUT B
1
NC
16
15
NC
NC
14
13
OUT
A
12
+V
CC
11
OUT
B
NC
10
9
NC
SL00332
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Small Outline Package (SO) 0 °C to 70 °C NE5532AD8 SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to 70 °C NE5532AN SOT97-1
16-Pin Plastic Small Outline Large (SOL) Package 0 °C to 70 °C NE5532D SOT162-1
8-Pin Small Outline Package (SO) 0 °C to 70 °C NE5532D8 SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to 70 °C NE5532N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +85 °C SA5532N SOT97-1
8-Pin Small Outline Package (SO) –55 °C to +125 °C SE5532AD8 SOT96-1
16-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE5532N SOT38-4
2001 Aug 03 853-0949 26836
2
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
NE/SA/SE5532/5532A
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V
S
V
IN
V
DIFF
T
amb
T
stg
T
j
P
D
T
sld
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V . Maximum current should be limited to ±10 mA.
2. Thermal resistances of the above packages are as follows:
N package at 100 °C/W
D package at 105 °C/W
D8 package at 160 °C/W
Supply voltage ±22 V
Input voltage ±V
Differential input voltage
1
SUPPLY
±0.5 V
Operating temperature range
NE5532/A 0 to 70 °C
SA5532 –40 to +85 °C
SE5532/A –55 to +125 °C
Storage temperature –65 to +150 °C
Junction temperature 150 °C
Maximum power dissipation,
T
= 25 °C (still-air)
amb
2
8 D8 package 780 mW
8 N package 1200 mW
16 D package 1200 mW
Lead soldering temperature (10 sec max) 230 °C
V
2001 Aug 03
3
Philips Semiconductors Product data
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
A
VOL
Large-signal voltage gain
V
OUT
Out ut swing
V
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Internally-compensated dual low noise
operational amplifier
DC ELECTRICAL CHARACTERISTICS
T
= 25 °C; VS = ±15 V , unless otherwise specified.
amb
V
OS
∆VOS/∆T 5 5 µV/°C
I
OS
∆IOS/∆T 200 200 pA/°C
I
B
∆IB/∆T 5 5 nA/°C
I
CC
V
CM
CMRR Common-mode rejection ratio 80 100 70 100 dB
PSRR Power supply rejection ratio 10 50 10 100 µV/V
R
IN
I
SC
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6 V . Maximum current should be limited to ±10 mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at V
rating is not exceeded.
Offset voltage 0.5 2 0.5 4 mV
Offset current 100 10 150 nA
Input current 200 400 200 800 nA
Supply current
Common-mode input range ±12 ±13 ±12 ±13 V
-
p
Input resistance 30 300 30 300 kΩ
Output short circuit current 10 38 60 10 38 60 mA
= ±15 V, T
S
1, 2, 3
SE5532/A NE5532/A, SA5532
Min Typ Max Min Typ Max
Over temperature 3 5 mV
Over temperature 200 200 nA
Over temperature 700 1000 nA
Over temperature 13 mA
RL ≥ 2 kΩ; VO = ±10 V 50 100 25 100 V/mV
Over temperature 25 15 V/mV
RL ≥ 600 Ω; VO = ±10 V 40 50 15 50 V/mV
Over temperature 20 10 V/mV
RL ≥ 600 Ω ±12 ±13 ±12 ±13
Over temperature ±10 ±12 ±10 ±12
RL ≥ 600 Ω; VS = ±18 V ±15 ±16 ±15 ±16
Over temperature ±12 ±14 ±12 ±14
RL ≥ 2 kΩ ±13 ±13.5 ±13 ±13.5
Over temperature ±12 ±12.5 ±10 ±12.5
= 25 °C. Temperature and/or supply voltages must be limited to ensure dissipation
amb
NE/SA/SE5532/5532A
8 10.5 8 16 mA
AC ELECTRICAL CHARACTERISTICS
T
= 25 °C; VS = ±15 V , unless otherwise specified.
amb
R
OUT
A
V
GBW Gain bandwidth product CL = 100 pF; RL = 600 Ω 10 MHz
SR Slew rate 9 V/µs
2001 Aug 03
NE/SE5532/A, SA5532
Min Typ Max
Output resistance
AV = 30 dB Closed-loop
f = 10 kHz, R
= 600 Ω
L
0.3 Ω
Voltage-follower
Overshoot VIN = 100 mV
P-P
10 %
CL = 100 pF; RL = 600 Ω
Gain f = 10 kHz 2.2 V/mV
V
= ±10 V 140 kHz
Power bandwidth V
OUT
= ±14 V; RL = 600 Ω, 100 kHz
OUT
VCC=±18V
4
Philips Semiconductors Product data
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Internally-compensated dual low noise
operational amplifier
ELECTRICAL CHARACTERISTICS
T
= 25 °C; VS = ±15 V , unless otherwise specified.
amb
V
NOISE
I
NOISE
TYPICAL PERFORMANCE CHARACTERISTICS
Input noise voltage fO = 30 Hz 8 8 12 nV/√Hz
fO = 1 kHz 5 5 6 nV/√Hz
Input noise current fO = 30 Hz 2.7 2.7 pA/√Hz
fO = 1 kHz 0.7 0.7 pA/√Hz
Channel separation f = 1 kHz; RS = 5 kΩ 110 110 dB
Open-Loop Frequency
Response
120
80
40
GAIN (dB)
0
TYPICAL VALUES
60
40
20
GAIN (dB)
Closed-Loop Frequency
RF = 10 kΩ; RE = 100 Ω
RF = 9 kΩ; RE = 1 kΩ
RF = 1 kΩ; RE = ∞
0
Response
NE/SA/SE5532/5532A
NE/SE5532 NE/SA/SE5532A
Min Typ Max Min Typ Max
Large-Signal Frequency
(V)
Vo(p-p)
40
30
20
10
TYPICAL VALUES
Response
VS = ±15 V
TYPICAL VALUES
-40
2103104105106107
10 10
f (Hz)
-20
3104105106107108
10
f (Hz)
Output Short-Circuit Current Input Bias Current
80
60
I
O
40
(mA)
20
0
-55 -25 0 25 50 75 100 +125 -55 -25 0 25 50 75 100 +125
T
amb
VS = ±15 V VS = ±15 V
TYP
(oC)
Supply Current
6
IO = 0
TYP
I
P
I
N
(mA)
4
2
(nVń
I
(mA)
1,4
1,2
I
0,8
0,4
0
T
Input Noise Voltage Density
–2
10
10
Ǹ
1
Hz
)
–1
10
TYP
amb
(oC)
0
2103104105106107
10
f (Hz)
Input Commom-Mode
Voltage Range
30
20
(V)
V
IN
10
0
01020
Vp; –V
(V)
N
TYPICAL VALUES
2001 Aug 03
0
0 10 20
Vp; –VN (V)
–2
10
10 10210310
4
f (Hz)
Figure 3. Typical Performance Characteristics
5
SL00334
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
TEST CIRCUITS
+
R
E
5532 (1/2)
–
R
F
100 pF
800 Ω
Figure 4. Test Circuits
R
S
25 Ω
V
I
Closed-Loop Frequency Response
NE/SA/SE5532/5532A
V+
5532
V
IN
1 kΩ
–
+
100 pF
V–
Voltage-Follower
600 Ω
V
OUT
SL00335
2001 Aug 03
6
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
NE/SA/SE5532/5532A
2001 Aug 03
7
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
NE/SA/SE5532/5532A
2001 Aug 03
8
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
NE/SA/SE5532/5532A
2001 Aug 03
9
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
NE/SA/SE5532/5532A
2001 Aug 03
10
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
NOTES
NE/SA/SE5532/5532A
2001 Aug 03
11
Philips Semiconductors Product data
Internally-compensated dual low noise
operational amplifier
Data sheet status
Product
Data sheet status
Objective data
Preliminary data
Product data
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[1]
status
Development
Qualification
Production
[2]
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com . Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
Document order number: 9397 750 09563
NE/SA/SE5532/5532A
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 03-02
2001 Aug 03
12
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