Philips NE5517, NE5517A, AU5517 Operation Manual

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INTEGRATED CIRCUITS

NE5517/NE5517A/AU5517

Dual operational transconductance amplifier

Product data Replaces NE5517/NE5517A dated 2001 Aug 03

 

2002 Dec 06

Philips Semiconductor Product data

Dual operational transconductance amplifier

DESCRIPTION

The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications.

Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current I

, hence eliminating the

ABC

audible noise that could otherwise be heard in high quality audio applications.

FEA TURES

•Constant impedance buffers

•∆V

of buffer is constant with amplifier I

BE

BIAS

change

•Excellent matching between amplifiers

•Linearizing diodes

•High output signal-to-noise ratio

APPLICA TIONS

•Multiplexers

•Timers

•Electronic music synthesizers

•Dolby HX Systems

•Current-controlled amplifiers, filters

•Current-controlled oscillators, impedances

PIN CONFIGURATION

PIN DESIGNA TION

PIN NO. SYMBOL NAME AND FUNCTION

NE5517/NE5517A/

N, D Packages

1

I

ABCa

2

D

a

3

+IN

a

4

–IN

a

5

VO

a

6

V–

INBUFFER

VO

BUFFERa

1 I 2 D 3 +IN 4 –IN 5 V 6 V– Negative supply 7 IN

BUFFERa

8 VO 9 VO

10 IN

BUFFERb

11 V+ Positive supply 12 V 13 –IN 14 +IN 15 D 16 I

7

a

8

Top View

Figure 1. Pin Configuration

ABCa

Oa

Amplifier bias input A Diode bias A

a

Non-inverting input A

a

Inverting input A

a

Output A

Buffer input A

BUFFERa BUFFERb

Buffer output A Buffer output B Buffer input B

Ob

ABCb

Output B Inverting input B

b

Non-inverting input B

b

Diode bias B

b

Amplifier bias input B

16 15 14 13 12 11 10

9

I

ABCb

D

b

+IN

b

–IN

b

VO

b

V+ IN

BUFFERb

VO

BUFFERb

SL00306

AU5517

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 °C NE5517D SOT109-1 16-Pin Small Outline (SO) Package –40 to +125 °C AU5517D SOT109-1

Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.

2002 Dec 06

2

Philips Semiconductor Product data

Dual operational transconductance amplifier

CIRCUIT SCHEMATIC

V+

11

D4

2,15

–INPUT

AMP BIAS

INPUT

V–

6

4,13

1,16

Q6

Q7

D2

Q4

Q5

Q2

Q1

D1

D3

+INPUT 3,14

Q10

Q8

Figure 2. Circuit Schematic

Q9

Q11

NE5517/NE5517A/

AU5517

D6

Q14

V

OUTPUT

5,12

Q15 Q16

R1

D5

7,10

D7

D8

Q12

Q13

8,9

Q3

SL00307

CONNECTION DIAGRAM

B AMP BIAS

INPUT

16 15 14 13 12 11 10 9

INPUT

NOTE:

1. V+ of output buffers and amplifiers are internally connected.

DIODE

123 45 6 7 8

AMP

DIODE

BIAS

A

B

BIAS

AA

B

INPUT

(+)

INPUT

(+)

Figure 3. Connection Diagram

INPUT

–

+

–

INPUT

B

(–)

A

B

OUTPUT

B

A

OUTPUT

V+ (1)

A

V–

B

BUFFER

INPUT

BUFFER

INPUT

A

B BUFFER OUTPUT

BUFFER OUTPUT

A

SL00308

2002 Dec 06

3

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

S

P

D

Supply voltage Power dissipation,

T

= 25 °C (still air)

amb

NE5517N, NE5517AN 1500 mW

NE5517D, AU5517D 1125 mW V I

D

I

ABC

I

SC

I

OUT

T

IN

amb

Differential input voltage ±5 V Diode bias current 2 mA Amplifier bias current 2 mA Output short-circuit duration Indefinite Buffer output current Operating temperature range

NE5517N, NE5517AN 0 °C to +70 °C °C

AU5517D –40 °C to +125 °C °C V

DC

T

stg

T

sld

DC input voltage +VS to –V Storage temperature range –65 °C to +150 °C °C Lead soldering temperature (10 sec max) 230 °C

NOTES:

1. For selections to a supply voltage above ±22 V, contact factory

2. The following derating factors should be applied above 25 °C N package at 12.0 mW/°C D package at 9.0 mW/°C

3. Buffer output current should be limited so as to not exceed package dissipation.

1

2

3

44 VDC or ±22 V

20 mA

S

2002 Dec 06

4

Philips Semiconductor Product data

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

I

BIAS

In ut bias current

gMForward transconductance

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

DC ELECTRICAL CHARACTERISTICS

V

OS

V

OS

I

OS

I

OUT

V

OUT

I

CC

CMRR

I

IN

R

IN

B

W

SR Slew rate Unity gain compensated 50 50 V/µs IN

BUFFER

VO

BUFFER

NOTES:

1. These specifications apply for V

specified. The inputs to the buffers are grounded and outputs are open.

2. These specifications apply for V

connected to the transconductance amplifier output.

= ±15, R

3. V

S

Input offset voltage Over temperature range 5 mV

∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C VOS including diodes Diode bias current (ID) = 500 µA 0.5 5 0.5 2 mV Input offset change 5 µA ≤ I Input offset current 0.1 0.6 0.1 0.6 µA ∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C

p

∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C

gM tracking 0.3 0.3 dB

Peak output current RL = 0, I

Peak output voltage

Positive RL = ∞, 5 µA ≤ I

Negative RL = ∞, 5 µA ≤ I Supply current I VOS sensitivity

Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V

Negative ∆ VOS/∆ V– 20 150 20 150 µV/V Common-mode rejection

ration Common-mode range ±12 ±13.5 ±12 ±13.5 V

Crosstalk Differential input current I

Leakage current I Input resistance 10 26 10 26 kΩ Open-loop bandwidth 2 2 MHz

Buffer input current 5 0.4 5 0.4 5 µA Peak buffer output voltage 5 10 10 V ∆VBE of buffer Refer to Buffer VBE test circuit

= ±15 V, T

S

= ±15 V, I

S

= 5 kΩ connected from Buffer output to –VS and 5 µA ≤ I

OUT

1

AU5517/NE5517 NE5517A

Min Typ Max Min Typ Max

0.4 5 0.4 2 mV

I

5 µA 0.3 5 0.3 2 mV

ABC

≤ 500 µA 0.1 0.1 3 mV

ABC

0.4 5 0.4 5 µA

Over temperature range 1 8 1 7 µA

6700 9600 1300 7700 9600 1200 µmho

Over temperature range 5400 4000 µmho

RL = 0, I

=5 µA 5 3 5 7 µA

ABC

= 500 µA 350 500 650 350 500 650 µA

ABC

RL = 0 300 300 µA

≤ 500 µA +12 +14.2 +12 +14.2 V

ABC

≤ 500 µA –12 –14.4 –12 –14.4 V

ABC

= 500 µA, both channels 2.6 4 2.6 4 mA

ABC

80 110 80 110 dB

Referred to input2

20 Hz < f < 20 kHz

= 0, input = ±4 V 0.02 100 0.02 10 nA

ABC

= 0 (Refer to test circuit) 0.2 100 0.2 5 nA

ABC

3

= 25 °C, amplifier bias current (I

amb

= 500 µA, R

ABC

= 5 kΩ connected from the buffer output to –VS and the input of the buffer is

OUT

≤ 500 µA.

ABC

100 100 dB

0.5 5 0.5 5 mV

) = 500 µA, Pins 2 and 15 open unless otherwise

ABC

2002 Dec 06

5

Philips Semiconductor Product data

Dual operational transconductance amplifier

TYPICAL PERFORMANCE CHARACTERISTICS

Input Offset Voltage

VS = ±15V

-55°C

+25°C

+125°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

Peak Output Current

VS = ±15V

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

INPUT OFFSET VOLTAGE (mV)

µ

PEAK OUTPUT CURRENT ( A)

5 4 3 2 1 0

-1

-2

-3

-4

-5

-6

-7

-8

4

10

3

10

2

10

1

+125°C

ABC

+125°C

ABC

)

+25°C

-55°C

3

10

2

10

1

INPUT OFFSET CURRENT (nA)

0.1

5 4 3 2 1 0

-1

-2

-3

-4

-5

COMMON-MODE RANGE (V)

-6

PEAK OUTPUT VOLTAGE AND

-7

-8

)

Input Bias Current

VS = ±15V

-55°C

+25°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

Peak Output Voltage and

Common-Mode Range

V

OUT

V

CMR

VS = ±15V

RLOAD = ∞

T

amb

V

CMR

V

OUT

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

+125°C

= 25°C

ABC

NE5517/NE5517A/

AU5517

4

10

3

10

2

10

INPUT BIAS CURRENT (nA)

1

)

5

10

4

10

3

10

2

10

LEAKAGE CURRENT (pA)

10

-50°C -25°C0°C25°C50°C75°C100°C125°C

)

Input Bias Current

VS = ±15V

-55°C

+25°C

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

+125°C

ABC

)

Leakage Current

(+)VIN = (–)VIN = V

AMBIENT TEMPERATURE (TA)

OUT

= 36V

0V

4

10

3

10

2

10

INPUT LEAKAGE CURRENT (pA)

1

012345 67

Input Leakage

+125°C

+25°C

INPUT DIFFERENTIAL VOLTAGE

2002 Dec 06

5

10

µ

4

10

3

10

2

10

TRANSCONDUCTANCE (gM) — ( ohm)

10

Transconductance

gM

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

PINS 2, 15

VS = ±15V

-55°C

OPEN

+25°C

+125°C

ABC

)

mq

m

M

Figure 4. Typical Performance Characteristics

6

2

10

Ω

1

10

1

0.1

INPUT RESISTANCE (MEG )

0.01

Input Resistance

PINS 2, 15

OPEN

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

ABC

SL00309

)

Philips Semiconductor Product data

Dual operational transconductance amplifier

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Amplifier Bias Voltage vs

2000 1800 1600 1400 1200 1000

800 600 400

AMPLIFIER BIAS VOLTAGE (mV)

200

0

0.1µA1µA10µA 100µA 1000µA

-55°C

+25°C

+125°C

AMPLIFIER BIAS CURRENT (I

Voltage vs Amplifier Bias Current Noise vs Frequency

20

0

-20

-40

-60

1 VOLT RMS (dB)

-80

OUTPUT VOLTAGE RELATIVE TO

-100

0.1µA1µA10µA 100µA 1000µA

I

ABC

Amplifier Bias Current

)

ABC

VS = ±15V RL = 10kΩ

VIN = 80mV

P-P

OUTPUT NOISE

20kHz BW

AMPLIFIER BIAS CURRENT (µA)

Figure 5. Typical Performance Characteristics (cont.)

Input and Output Capacitance

7

VS = ±15V

6

5

4

3

CAPACITANCE (pF)

2

1

0

0.1µA1µA10µA 100µA 1000µA

AMPLIFIER BIAS CURRENT (I

VIN = 40mV

P-P

T

amb

C

IN

C

OUT

= +25°C

NE5517/NE5517A/

Distortion vs Differential

100

RL = 10kΩ I

= 1mA

ABC

10

1

0.1

OUTPUT DISTORTION (%)

0.01 1 10 100 1000

)

ABC

600

500

400

300

200

100

OUTPUT NOISE CURRENT (pA/Hz)

0

10 100 1k 10k 100k

FREQUENCY (Hz)

DIFFERENTIAL INPUT VOLTAGE (mV

I

ABC

I

= 100µA

ABC

Input Voltage

= 1mA

AU5517

)

P-P

SL00310

2002 Dec 06

7

Philips Semiconductor Product data

Dual operational transconductance amplifier

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

+36V

4, 13

2, 15

3, 14

–

+

A

Leakage Current Test Circuit Differential Input Current Test Circuit

NE5517

11

7, 10

5, 12

1, 15

6

8, 9

V+

NE5517/NE5517A/

AU5517

+15V

4V

A

4, 13

2, 15

3, 14

–

+

11

5, 12

NE5517

1, 10

6

–15V

APPLICATIONS

INPUT

V

50kΩ

V–

Buffer V

Test Circuit

BE

Figure 6. Typical Performance Characteristics (cont.)

+15V

10k

390pF

51Ω

1.3k

3, 14

2, 15

4, 13

–

+

NE5517

10k

11

6

–15V

0.001µF

1, 16

0.01µF

Unity Gain Follower

Figure 7. Applications

62k

5, 12

7, 10

0.01µF

8, 9

5k

–15V

SL00311

OUTPUT

SL00312

2002 Dec 06

8

Philips Semiconductor Product data

Dual operational transconductance amplifier

CIRCUIT DESCRIPTION

The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 8.

1. Transconductance Amplifier

The transistor pair, Q4 and Q5, forms a transconductance stage. The

ratio of their collector currents (I the differential input voltage, V

I

5

KT

+

V

IN

Where V

In

q

I

4

is the difference of the two input voltages

IN

KT ≅ 26 mV at room temperature (300 °k).

Transistors Q the sum of current I

I

+ I

4

, Q2 and diode D1 form a current mirror which focuses

1

and I5 to be equal to amplifier bias current IB:

4

= I

5

B

If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor series of In function can be approximated as

KT

q

and I

KT

q

I

* I4+ V

5

In

≅ I5 ≅ I

4

I

In

I

5

I

4

5

[

4

I5* I

KT

[

q

I

4

B

I5* I

KT

4

1ń2I

ǒ

I

B

2KT

+

B

q

Ǔ

q

IN

The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form three current mirrors that produce an output current equal to I minus I4. Thus:

q

ǒ

V

IN

The term proportional to I

Ǔ

I

B

+ I

2KT

O

q

ǒ

Ǔ

I

B

is then the transconductance of the amplifier and is

2KT

.

B

2. Linearizing Diodes

For VIN greater than a few millivolts, equation 3 becomes invalid and the transconductance increases non-linearly. Figure 9 shows how the internal diodes can linearize the transfer function of the operational amplifier. Assume D sources and the input signal current is I

I

4

I

4

+ I = (I

= IB and I

5

– I0), I

B

5

= (I

– I

= I0, that is:

4

+ I0)

B

and I5, respectively) is defined by

4

, which is shown in equation 1.

IN

4

I5* I

2KT

q

4

+ V

. Since

S

IN

I

B

and D3 are biased with current

2

(1)

(2)

(3)

(4)

5

(5)

NE5517/NE5517A/

AU5517

For the diodes and the input transistors that have identical geometries and are subject to similar voltages and temperatures, the following equation is true:

I

D

) I

I

2

D

2

S

* I

2IB

I

D

S

KT

+

q

S

for |IS| t

In

T

In

q

I

+ I

O

The only limitation is that the signal current should not exceed ID.

3. Impedance Buffer

The upper limit of transconductance is defined by the maximum value of I

(2 mA). The lowest value of IB for which the amplifier will

B

function therefore determines the overall dynamic range. At low values of I

, a buffer with very low input bias current is desired. A

B

Darlington amplifier with constant-current source (Q D

, and R1) suits the need.

8

APPLICATIONS Voltage-Controlled Amplifier

In Figure 10, the voltage divider R2, R3 divides the input-voltage into small values (mV range) so the amplifier operates in a linear manner.

It is:

R

I

+*V

+ I

V

OUT

V

IN

= 19.2 I

M

IN

OUT

+

OUT

V

OUT

A +

(3) g (gM in µmhos for I

Since g

is directly proportional to I

M

controlled by the voltage V When VC is taken relative to –VCC the following formula is valid:

* 1.2V)

(V

I

ABC

C

+

R

The 1.2 V is the voltage across two base-emitter baths in the current

mirrors. This circuit is the base for many applications of the AU5517/NE5517.

@

R2) R

@ RL;

R

R2) R

ABC

1

3

in mA)

) IO)

1ń2(I

B

1ń2(I

* IO)

B

I

D

2

@ gM;

3

@ gM @ R

L

ABC

in a simple way.

C

, Q15, Q16, D7,

14

, the amplification is

(6)

2002 Dec 06

9

Philips Semiconductor Product data

Dual operational transconductance amplifier

V+

11

2,15

–INPUT

AMP BIAS

INPUT

V–

6

Q6

D2

Q4

4,13

1,16

Q1

D1

Q2

Q7

Q5

D4

Q10

Q11

D3

+INPUT 3,14

Q9

Q8

Figure 8. Circuit Diagram of NE5517

NE5517/NE5517A/

AU5517

D6

Q14

V

OUTPUT

5,12

Q15 Q16

R1

D5

7,10

D7

D8

Q12

Q13

8,9

Q3

SL00313

+V

S

I

D

I

B



S

I

D

SL00314



–V

I

B

S

I0 2I

4

I

5

I

5

I

D 2

1/2I

I

S

I

S

I

D

 I

D

3

D

S

1/2I

 I

S

2

D

2

I0 I5 I

I

4

Q

4

Figure 9. Linearizing Diode

Stereo Amplifier With Gain Control

Figure 1 1 shows a stereo amplifier with variable gain via a control input. Excellent tracking of typical 0.3 dB is easy to achieve. With the potentiometer, R

, the offset can be adjusted. For AC-coupled

P

amplifiers, the potentiometer may be replaced with two 510 Ω resistors.

Modulators

Because the transconductance of an OTA (Operational Transconductance Amplifier) is directly proportional to I amplification of a signal can be controlled easily. The output current is the product from transconductance×input voltage. The circuit is effective up to approximately 200 kHz. Modulation of 99% is easy to achieve.

ABC

, the

Voltage-Controlled Resistor (VCR)

Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made. Figure 13 shows how this is done. A voltage presented at the RX terminals forces a voltage at the input. This voltage is multiplied by g

and thereby forces a current through the RX terminals:

M

R  R

gM  R

A

R

=

X

where gM is approximately 19.21 µMHOs at room temperature. Figure 14 shows a Voltage Controlled Resistor using linearizing diodes. This improves the noise performance of the resistor.

Voltage-Controlled Filters

Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is a unity gain buffer until X

is equal to R/RA. Then, the frequency

C/gM

response rolls off at a 6dB per octave with the –3 dB point being defined by the given equations. Operating in the same manner, a Voltage Controlled High-Pass Filter is shown in Figure 16. Higher order filters can be made using additional amplifiers as shown in Figures 17 and 18.

Voltage-Controlled Oscillators

Figure 19 shows a voltage-controlled triangle-square wave

generator. With the indicated values a range from 2 Hz to 200 kHz is

possible by varying I The output amplitude is determined by I

Please notice the differential input voltage is not allowed to be above

5 V. With a slight modification of this circuit you can get the sawtooth

pulse generator, as shown in Figure 20.

from 1 mA to 10 µA.

ABC

OUT

× R

OUT

.

2002 Dec 06

10

Philips Semiconductor Product data

Dual operational transconductance amplifier

APPLICATION HINTS

To hold the transconductance gM within the linear range, I should be chosen not greater than 1 mA. The current mirror ratio should be as accurate as possible over the entire current range. A current mirror with only two transistors is not recommended. A suitable current mirror can be built with a PNP transistor array which causes excellent matching and thermal coupling among the

V

R4 = R2/ /R

IN

3

R

2

ABC

V

C

+V

CC

R

11

NE5517

6

TYPICAL VALUES:

1

I

OUT

3

+

–

4

R

3

Figure 10.

NE5517/NE5517A/

AU5517

transistors. The output current range of the DAC normally reaches from 0 to –2 mA. In this application, however, the current range is set through R

I

DACMAX

I

ABC

5

R

L

R R2 = 10k R R R RS = 47k

7

= 47k

1

= 200Ω

3

= 200Ω

4

= 100k

L

(10 kΩ) to 0 to –1 mA.

REF

V

REF

 2 

R

REF

8

R

S

SL00315

5V

 1mA

10kW

INT

+V

CC

V

OUT

INT

–V

CC

+V

CC

30k R

10k R

C

IN

R

P

1k

+V

CC

IN

R

P

1k

+V

CC

V

IN1

V

C

V

IN2

15k

R

15k

R

3

+

11

15

4

14

13

NE5517/A

–

+

NE5517/A

–

I

ABC

1

R

L

10k

16

I

ABC

6

10

12

R

L

10k

D

5.1k

R

INT +V

CC

8

V

OUT1

–V

CC

+V

CC

9

V

OUT2

S

–V

CC

INT

SL00316

Figure 11. Gain-Controlled Stereo Amplifier

2002 Dec 06

11

Philips Semiconductor Product data

Dual operational transconductance amplifier

R

C

V

IN2

SIGNAL

V

IN1

CARRIER

200

V

OS

10k

3

2

4

30k

I

ABC

I

D

15k

1k

2

3

4

+V

CC

+

NE5517/A

–

–V

CC

Figure 12. Amplitude Modulator

+V

CC

11

+

NE5517/A

–

–V

CC

I

O

5

Figure 13. VCR

11

6

30k

7

C

R

X

100k

NE5517/NE5517A/

AU5517

1

INT +V

CC

5

8

R

10k

R

10k

7

8

R

S

R  R gM R

A A

V

–V

INT

OUT

CC

SL00317

SL00318

L

RX

V

C

INT +V

CC

V

OUT

–V

CC

INT

2002 Dec 06

+V

CC

2

3

4

+V

NE5517/A

–V

CC

I

D

R

OS

P

1k

V

1

CC

11

5

6

30k

7

C

R

X

100k

8

R

10k

+V

–V

INT

V

INT

C

CC

SL00319

Figure 14. VCR with Linearizing Diodes

12

Philips Semiconductor Product data

Dual operational transconductance amplifier

1

+V

CC

NOTE:

fO

V

NULL

NOTE:

fO

OS

V

-V

100k

IN

RAg

g(R  RA) 2pC

+V

CC

100k

CC

1k

RAg

M

g(R  RA) 2pC

200

M

Figure 15. Voltage-Controlled Low-Pass Filter

Figure 16. Voltage-Controlled High-Pass Filter

3

2

R

A

3

2

4

R

A

1k

+

NE5517/A

–

4

200

+V

+

NE5517/A

–

–V

CC

11

6

150pF

CC

1

I

ABC

11

6

0.005µF

I

ABC

5

NE5517/NE5517A/

AU5517

30k

5

7

C

R

100k

30k

7

C

R

100k

10k

SL00320

8

SL00321

V

C

INT

+V

CC

8

V

OUT

–V

CC

INT

V

C

INT

+V

CC

V

OUT

–V

CC

INT

V

IN

NOTE:

fO

2002 Dec 06

200

R

A

200

RAg

M

(R  RA)2p C

+V

CC

+

NE5517/A

–

–V

CC

+V

CC

+

NE5517/A

–

A

R

A

200

C

100pF

100k

R

200

10k

-V

100k

CC

R

Figure 17. Butterworth Filter – 2nd Order

13

15k

200pF

2C

10k

V

C

INT +V

CC

V

OUT

–V

CC

INT

SL00322

Philips Semiconductor Product data

Dual operational transconductance amplifier

1

+V

10k

CC

3

+

11

2

NE5517/A

–

6

1k

–V

CC

5

7

800pF

20k

Figure 18. State Variable Filter

3

4

30k

–

NE5517/A

+

–V

11

6

CC

+V

CC

1

5

7

C

0.1µF

20k

–V

CC

V

C

INT

V

+V

8

OUT1

5.1k

–V

+V

20k

CC

1k

BANDPASS OUT

13

–

NE5517/A

+

14

NE5517/NE5517A/

AU5517

800pF

9

20k

15k

10k

INT +V

CC

V

OUT2

–V

CC

INT

GAIN CONTROL

LOW PASS

V

OUT

5.1k

SL00323

V

C

INT

+V

CC

9

–V

CC

INT

16

14

+

NE5517/A

15

–

13

+V

CC

47k

12 10

16

12 10

NOTE:

(VC 0.8) R

VPK

2002 Dec 06

R1 R

SL00324

Figure 19. Triangle-Square Wave Generator (VCO)

I

1

TL

B

5

C

0.1µF

2VPKxC

I

C

f

OSC

7

20k

–V

CC

I

C

2VPKxC

INT

+V

CC

8

V

OUT1

ICI

13

14

–

NE5517/A

+

B

+V

CC

16

47k

12 10

R

2

30k

INT

+V

CC

30k

–V

CC

V

OUT2

INT

SL00325

I

C

4

2

3

TH

470k

+V

+

11

NE5517/A

–

6

–V

CC

2VPKxC

I

B

CC

V

C

R

1

30k

1

2

Figure 20. Sawtooth Pulse VCO

14

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4

2002 Dec 06

15

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

2002 Dec 06

16

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

REVISION HISTORY

Rev Date Description

_3 20021206 Product data (9397 750 10796); type number AU5517 added. ECN 853–0887 29176 of 08 November 2002;

_2 20010803 Product data (9397 750 09175); NE5517/NE5517A only; ECN 853–0887 26833 of 2001 Aug 03 .

supersedes Product data NE5517_NE5517A version 2 of 03 August 2001.

Modifications:

•Type number AU5517 added.

•“Description” section edited.

2002 Dec 06

17

Philips Semiconductor Product data

Dual operational transconductance amplifier

NE5517/NE5517A/

AU5517

Data sheet status

Product

Level

I

II

III

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

Data sheet status

Objective data

Preliminary data

Product data

http://www.semiconductors.philips.com.

[1]

[2] [3]

status

Development

Qualification

Production

Definitions

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.

This data sheet contains data from the preliminary specification. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.

This data sheet contains data from the product specification. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notification (CPCN).

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see

the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be

expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Contact information

For additional information please visit http://www.semiconductors.philips.com . Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Document order number: 9397 750 10796

 Koninklijke Philips Electronics N.V. 2002

Date of release: 12-02

 

2002 Dec 06

18