Philips NE5205AN, NE5205AD, SA5205AN Datasheet

INTEGRATED CIRCUITS

SA5205A

Wide-band high-frequency amplifier

Product specification
Replaces data of February 24, 1992

IC17 Data Handbook

Philips Semiconductors

1997 Nov 07

Philips Semiconductors Product specification

SA5205AWide-band high-frequency amplifier

DESCRIPTION

The SA5205A family of wideband amplifiers replace the SA5205
family. The ‘A’ parts are fabricated on a rugged 2µm bipolar process
featuring excellent statistical process control. Electrical
performance is nominally identical to the original parts.

The SA5205A is a high-frequency amplifier with a fixed insertion
gain of 20dB. The SA5205A operates with a single supply of 6V , and
only draws 24mA of supply current, which is much less than
comparable hybrid parts. The noise figure is 4.8dB in a 75Ω system
and 6dB in a 50Ω system.

Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high-power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The SA5205A solves these
problems by incorporating a wide-band amplifier on a single
monolithic chip.

The part is well matched to 50 or 75Ω input and output impedances.
The Standing Wave Ratios in 50 and 75Ω systems do not exceed

1.5 on either the input or output from DC to the -3dB bandwidth limit.
Since the part is a small monolithic IC die, problems such as stray

capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.

No external components are needed other than AC coupling
capacitors because the SA5205A is internally compensated and
matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm respectively at 100MHz.

The device is ideally suited for 75Ω cable television applications
such as decoder boxes, satellite receiver/decoders, and front-end
amplifiers for TV receivers. It is also useful for amplified splitters and
antenna amplifiers.

The part is matched well for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters and all kinds of signal
analyzers. Other applications at 50Ω include mobile radio, CB radio
and data/video transmission in fiber optics, as well as broad-band
LANs and telecom systems. A gain greater than 20dB can be
achieved by cascading additional SA5205As in series as required,
without any degradation in amplifier stability.

PIN CONFIGURATIONS

D Packages

1

V

CC

2

V

IN

3

GND

GND

TOP VIEW

Figure 1. Pin Configuration

20dB

8

V

CC

7

V

OUT

6

GND

54

GND

FEATURES

•600MHz bandwidth

•20dB insertion gain

•4.8dB (6dB) noise figure ZO=75Ω (ZO=50Ω)

•No external components required

•Input and output impedances matched to 50/75Ω systems

•2000V ESD protection

APPLICATIONS

•75Ω cable TV decoder boxes

•Antenna amplifiers

•Amplified splitters

•Signal generators

•Frequency counters

•Oscilloscopes

•Signal analyzers

•Broad-band LANs

•Fiber-optics

•Modems

•Mobile radio

•Security systems

•Telecommunications

SR00215

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) package -40 to +85°C SA5205AD SOT96-1

1997 Nov 07 853-1598 18662

2

Philips Semiconductors Product specification

SA5205AWide-band high-frequency amplifier

EQUIVALENT SCHEMATIC

V

CC

R1

Q3

Q6

R3

V

IN

Q1 Q4

RF1

RE1

RF2

Q5

Q2

R2

RE2

V

OUT

Figure 2. Equivalent Schematic

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

CC

V

AC

T

A

P

DMAX

NOTES:

1. Derate above 25°C, at the following rates:
D package at 6.2mW/°C

2. See “Power Dissipation Considerations” section.

Supply voltage 9 V
AC input voltage 5 V
Operating ambient temperature range

SA grade -40 to +85 °C

Maximum power dissipation,
T

=25°C (still-air)

A

1, 2

D package 780 mW

SR00216

P-P

1997 Nov 07

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

S11

Input return loss

dB

S22

Output return loss

dB

S12

Isolation

dB

SA5205AWide-band high-frequency amplifier

DC ELECTRICAL CHARACTERISTICS

VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified.

SA5205A

Min Typ Max

V

CC

I

CC

Operating supply voltage range

Supply current

Over temperature

Over temperature

S21 Insertion gain f=100MHz

Over temperature

p

p

f=100MHz 25

DC - f

MAX

f=100MHz 27

DC - f

MAX

5
5

20

19
17

16.5

12

12

25
25

19 21

f=100MHz -25

DC - f

MAX

t

R

t

P

Rise time 500 ps
Propagation delay 500 ps

-18

BW Bandwidth ±0.5dB 450 MHz
f

MAX

Bandwidth -3dB 550 MHz
Noise figure (75Ω) f=100MHz 4.8 dB
Noise figure (50Ω) f=100MHz 6.0 dB
Saturated output power f=100MHz +7.0 dBm
1dB gain compression f=100MHz +4.0 dBm
Third-order intermodulation

intercept (output)
Second-order intermodulation

intercept (output)

f=100MHz +17 dBm

f=100MHz +24 dBm

8
8

32
33

21.5

V
V

mA
mA

dB

1997 Nov 07

4