Philips NE5205A Service Manual

INTEGRATED CIRCUITS

NE/SA/SE5205A

Wide-band high-frequency amplifier

Product specification 1992 Feb 24

RF Communications Handbook

Philips Semiconductors

Philips Semiconductors Product specification

NE/SA/SE5205AWide-band high-frequency amplifier

DESCRIPTION

The NE/SA/SE5205A family of wideband amplifiers replace the
NE/SA/SE5205 family. The ‘A’ parts are fabricated on a rugged 2µm
bipolar process featuring excellent statistical process control.
Electrical performance is nominally identical to the original parts.

The NE/SA/SE5205A is a high-frequency amplifier with a fixed
insertion gain of 20dB. The gain is flat to ±0.5dB from DC to
450MHz, and the -3dB bandwidth is greater than 600MHz in the EC
package. This performance makes the amplifier ideal for cable TV
applications. For lower frequency applications, the part is also
available in industrial standard dual in-line and small outline
packages. The NE/SA/SE5205A operates with a single supply of 6V ,
and only draws 24mA of supply current, which is much less than
comparable hybrid parts. The noise figure is 4.8dB in a 75Ω system
and 6dB in a 50Ω system.

Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high-power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The NE/SA/SE5205A solves
these problems by incorporating a wide-band amplifier on a single
monolithic chip.

The part is well matched to 50 or 75Ω input and output impedances.
The Standing Wave Ratios in 50 and 75Ω systems do not exceed

1.5 on either the input or output from DC to the -3dB bandwidth limit.
Since the part is a small monolithic IC die, problems such as stray

capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.

No external components are needed other than AC coupling
capacitors because the NE/SA/SE5205A is internally compensated
and matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm respectively at 100MHz.

The device is ideally suited for 75Ω cable television applications
such as decoder boxes, satellite receiver/decoders, and front-end
amplifiers for TV receivers. It is also useful for amplified splitters and
antenna amplifiers.

The part is matched well for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters and all kinds of signal
analyzers. Other applications at 50Ω include mobile radio, CB radio
and data/video transmission in fiber optics, as well as broad-band
LANs and telecom systems. A gain greater than 20dB can be
achieved by cascading additional NE/SA/SE5205As in series as
required, without any degradation in amplifier stability.

PIN CONFIGURA TIONS

N, D Packages

1

V

CC

2

V

IN

3

GND

GND

TOP VIEW

Figure 1. Pin Configuration

20dB

8

V

CC

7

V

OUT

6

GND

54

GND

FEATURES

•600MHz bandwidth

•20dB insertion gain

•4.8dB (6dB) noise figure ZO=75Ω (ZO=50Ω)

•No external components required

•Input and output impedances matched to 50/75Ω systems

•Surface mount package available

•MIL-STD processing available

•2000V ESD protection

APPLICATIONS

•75Ω cable TV decoder boxes

•Antenna amplifiers

•Amplified splitters

•Signal generators

•Frequency counters

•Oscilloscopes

•Signal analyzers

•Broad-band LANs

•Fiber-optics

•Modems

•Mobile radio

•Security systems

•Telecommunications

SR00215

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) package 0 to +70°C NE5205AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5205AN SOT97-1
8-Pin Plastic Small Outline (SO) package -40 to +85°C SA5205AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA5205AN SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) -55 to +125°C SE5205AN SOT97-1

1992 Feb 24 853-1598 05759

2

Philips Semiconductors Product specification

NE/SA/SE5205AWide-band high-frequency amplifier

EQUIVALENT SCHEMATIC

V

CC

R1

Q3

Q6

R3

V

IN

Q1 Q4

RF1

RE1

RF2

Q5

Q2

R2

RE2

V

OUT

Figure 2. Equivalent Schematic

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

CC

V

AC

T

A

P

DMAX

NOTES:

1. Derate above 25°C, at the following rates:
N package at 9.3mW/°C
D package at 6.2mW/°C

2. See “Power Dissipation Considerations” section.

Supply voltage 9 V
AC input voltage 5 V
Operating ambient temperature range

NE grade 0 to +70 °C
SA grade -40 to +85 °C
SE grade -55 to +125 °C

Maximum power dissipation,
T

=25°C (still-air)

A

1, 2

N package 1 160 mW
D package 780 mW

SR00216

P-P

1992 Feb 24

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

S11

I

dB

S22

Output

dB

S12

Isolati

dB

NE/SA/SE5205AWide-band high-frequency amplifier

DC ELECTRICAL CHARACTERISTICS

VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified.

SE5205A NE/SA5205A

Min Typ Max Min Typ Max

V

CC

I

CC

Operating supply voltage range

Supply current

Over temperature

Over temperature

S21 Insertion gain f=100MHz

Over temperature

nput return loss

return loss

on

t

R

t

P

Rise time 500 500 ps
Propagation delay 500 500 ps

f=100MHz D, N 25 25

DC - f

D, N 12 12

MAX

f=100MHz D, N 27 27

DC - f

MAX

f=100MHz -25 -25

DC - f

MAX

5
5

20
19

17

25
25

19 21

16.5

12 12

-18 -18

BW Bandwidth ±0.5dB D, N 300 450 MHz
f

MAX

Bandwidth -3dB D, N 550 MHz
Noise figure (75Ω) f=100MHz 4.8 4.8 dB
Noise figure (50Ω) f=100MHz 6.0 6.0 dB
Saturated output power f=100MHz +7.0 +7.0 dBm
1dB gain compression f=100MHz +4.0 +4.0 dBm
Third-order intermodulation

intercept (output)
Second-order intermodulation

intercept (output)

f=100MHz +17 +17 dBm

f=100MHz +24 +24 dBm

6.5

6.5

5
5

323320 19252532

19 21

21.51716.5

8
8

33

21.5

V
V

mA
mA

dB

1992 Feb 24

4

Philips Semiconductors Product specification

NE/SA/SE5205AWide-band high-frequency amplifier

35
34

32
30

TA = 25oC

28
26

24
22

SUPPLY CURRENT—mA

20
18

16

5 5.5 6 6.5 7 7.5 8

SUPPLY VOLTAGE—V

Figure 3. Supply Current vs Supply Voltage

9

8

7

NOISE FIGURE—dBm

6

5

10

vcc = 8v
vcc = 7v
vcc = 6v
vcc = 5v

12 468 2 468

ZO = 50Ω

= 25oC

T

A

2

10

FREQUENCY—MHz

Figure 4. Noise Figure vs Frequency

25

20

vcc = 7v

vcc = 8v

SR00217

3

10

SR00219

11
10

9
8

7
6
5
4

VCC = 7V

3
2

VCC = 6V

1

VCC = 5V

0
–1
–2
–3

OUTPUT LEVEL—dBm

ZO = 50Ω

–4
–5
–6

= 25oC

T

A

12 468 2 468

10

VCC = 8V

2

10

FREQUENCY—MHz

Figure 7. Saturated Output Power vs Frequency

10

9
8
7
6

V

6V

CC =

5
4
3

V

CC =

2
1

0
–1
–2

OUTPUT LEVEL—dBm

–3
–4
–5
–6

ZO = 50Ω

T

A

12 468 2 468

10

5V

= 25oC

V

7V

CC =

2

10

FREQUENCY—MHz

V

CC =

8V

Figure 8. 1dB Gain Compression vs Frequency

40

35

30

3

10

SR00218

3

10

SR00220

INSERTION GAIN—dB

INSERTION GAIN—dB

1992 Feb 24

15

ZO = 50Ω

= 25oC

T

A

10

12 468 2 468

10

FREQUENCY—MHz

vcc = 6v

2

10

vcc = 5v

Figure 5. Insertion Gain vs Frequency (S21)

25

TA = 55oC

TA = 85oC

TA = 125oC

2

10

TA = 25oC

20

15

VCC = 8V

= 50Ω

Z

O

10

12 468 2 468

10

FREQUENCY—MHz

Figure 6. Insertion Gain vs Frequency (S21)

3

10

SR00221

3

10

SR00223

25

20

15

SECOND–ORDER INTERCEPT—dBM

10

45678910

POWER SUPPLY VOLTAGE—V

ZO = 50Ω

= 25oC

T

A

Figure 9. Second-Order Output Intercept vs Supply Voltage

30

25

20

15

10

THIRD–ORDER INTERCEPT—dBm

5

4 5678910

POWER SUPPLY VOLTAGE—V

ZO = 50Ω

= 25oC

T

A

Figure 10. Third-Order Intercept vs Supply Voltage

5

SR00222

SR00224