Philips NE5204A Service Manual

INTEGRATED CIRCUITS

NE/SA5204A

Wide-band high-frequency amplifier

Product specification 1992 Feb 25

RF Communications Handbook

Philips Semiconductors

Philips Semiconductors Product specification

NE/SA5204AWide-band high-frequency amplifier

DESCRIPTION

The NE/SA5204A family of wideband amplifiers replaces the
NE/SA5204 family . The ‘A’ parts are fabricated on a rugged 2µm
bipolar process featuring excellent statistical process control.
Electrical performance is nomically identical to the original parts.

The NE/SA5204A is a high-frequency amplifier with a fixed insertion
gain of 20dB. The gain is flat to ±0.5dB from DC to 200MHz. The

-3dB bandwidth is greater than 350MHz. This performance makes
the amplifier ideal for cable TV applications. The NE/SA5204A
operates with a single supply of 6V, and only draws 25mA of supply
current, which is much less than comparable hybrid parts. The noise
figure is 4.8dB in a 75Ω system and 6dB in a 50Ω system.

The NE/SA5204A is a relaxed version of the NE5205. Minimum
guaranteed bandwidth is relaxed to 350MHz and the “S” parameter
Min/Max limits are specified as typicals only.

Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The NE/SA5204A solves these
problems by incorporating a wideband amplifier on a single
monolithic chip.

The part is well matched to 50 or 75Ω input and output impedances.
The standing wave ratios in 50 and 75Ω systems do not exceed 1.5
on either the input or output over the entire DC to 350MHz operating
range.

Since the part is a small, monolithic IC die, problems such as stray
capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.

No external components are needed other than AC-coupling
capacitors because the NE/SA5204A is internally compensated and
matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm, respectively, at 100MHz.

The part is well matched for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters, and all kinds of
signal analyzers. Other applications at 50Ω include mobile radio, CB
radio, and data/video transmission in fiber optics, as well as
broadband LANs and telecom systems. A gain greater than 20dB
can be achieved by cascading additional NE/SA5204As in series as
required, without any degradation in amplifier stability.

PIN CONFIGURA TION

N, D Packages

1

V

CC

2

V

IN

3

GND

GND

TOP VIEW

Figure 1. Pin Configuration

20dB

8

V

CC

7

V

OUT

6

GND

54

GND

FEATURES

•Bandwidth (min.)

200 MHz, ±0.5dB
350 MHz, -3dB

•20dB insertion gain

•4.8dB (6dB) noise figure Z

=75Ω (ZO=50Ω)

O

•No external components required

•Input and output impedances matched to 50/75Ω systems

•Surface-mount package available

•Cascadable

•2000V ESD protection

APPLICATIONS

•Antenna amplifiers

•Amplified splitters

•Signal generators

•Frequency counters

•Oscilloscopes

•Signal analyzers

•Broadband LANs

•Networks

•Modems

•Mobile radio

•Security systems

•Telecommunications

SR00193

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5204AN SOT97-1
8-Pin Plastic Small Outline (SO) package 0 to +70°C NE5204AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) –40 to +85°C SA5204AN SOT97-1
8-Pin Plastic Small Outline (SO) package –40 to +85°C SA5204AD SOT96-1

1992 Feb 25 853-1599 05790

2

Philips Semiconductors Product specification

NE/SA5204AWide-band high-frequency amplifier

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

CC

V

IN

T

A

P

DMAX

T

J

T

STG

T

SOLD

NOTES:

1. Derate above 25°C, at the following rates
N package at 9.3mW/°C
D package at 6.2mW/°C

2. See “Power Dissipation Considerations” section.

Supply voltage 9 V
AC input voltage 5 V

P–P

Operating ambient temperature range

NE grade 0 to +70 °C
SA grade –40 to +85 °C

Maximum power dissipation

1, 2

TA=25°C(still–air)
N package 1160 mW
D package 780 mW
Junction temperature 150 °C
Storage temperature range –55 to +150 °C
Lead temperature

(soldering 60s)

300 °C

EQUIVALENT SCHEMATIC

V

IN

V

CC

R

1

Q

3

Q

1

R

E1

Q

4

R

F1

R

F2

Figure 2. Equivalent Schematic

R

2

R

0

Q

6

Q

2

R

3

R

E2

Q

5

V

OUT

SR00194

1992 Feb 25

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

S11

I

dB

S22

Output

dB

S12

Isolati

dB

NE/SA5204AWide-band high-frequency amplifier

DC ELECTRICAL CHARACTERISTICS

VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C, in all packages, unless otherwise specified.

LIMITS

Min Typ Max

V

CC

I

CC

S21 Insertion gain f=100MHz, over temperature 16 19 22 dB

BW Bandwidth ±0.5dB 200 350 MHz
BW Bandwidth –3dB 350 550 MHz

t

R

t

P

Operating supply voltage range Over temperature 5 8 V
Supply current Over temperature 19 25 33 mA

nput return loss

return loss

on

f=100MHz 25

DC –550MHz 12

f=100MHz 27

DC –550MHz 12

f=100MHz –25

DC –550MHz –18

Noise figure (75Ω) f=100MHz 4.8 dB
Noise figure (50Ω) f=100MHz 6.0 dB
Saturated output power f=100MHz +7.0 dBm
1dB gain compression f=100MHz +4.0 dBm
Third–order intermodulation inter-

cept (output)
Second–order intermodulation inter-

cept (output)

f=100MHz +17 dBm

f=100MHz +24 dBm

Rise time 500 ps
Propagation delay 500 ps

35
34

32
30
28

26
24
22
20

SUPPLY CURRENT—mA

18
16

TA = 25oC

5 5.5 6 6.5 7 7.5 8

SUPPLY VOLTAGE—V

Figure 3. Supply Current vs Supply Voltage

SR00195

9

8

7

NOISE FIGURE—dBm

6

5

10

vcc = 8v
vcc = 7v
vcc = 6v

vcc = 5v

12 468 2 468

ZO = 50Ω

= 25oC

T

A

2

10

FREQUENCY—MHz

Figure 4. Noise Figure vs Frequency

3

10

SR00196

1992 Feb 25

4

Philips Semiconductors Product specification

NE/SA5204AWide-band high-frequency amplifier

25

vcc = 8v

v

= 7v

20

15

ZO = 50Ω

INSERTION GAIN—dB

= 25oC

T

A

10

12 468 2 468

10

10

FREQUENCY—MHz

cc

vcc = 6v

vcc = 5v

2

Figure 5. Insertion Gain vs Frequency (S21)

25

TA = 55oC

TA = 85oC

TA =

125oC

2

10

TA = 25oC

20

15

INSERTION GAIN—dB

VCC = 8V

= 50Ω

Z

O

10

12 468 2 468

10

FREQUENCY—MHz

Figure 6. Insertion Gain vs Frequency (S21)

3

10

SR00197

3

10

SR00199

10

9
8
7
6

V

6V

CC =

5
4
3

V

CC =

2
1

0
–1
–2

OUTPUT LEVEL—dBm

–3
–4
–5
–6

ZO = 50Ω

T

A

12 468 2 468

10

5V

= 25oC

V

7V

CC =

2

10

FREQUENCY—MHz

V

CC =

8V

3

10

SR00198

Figure 8. 1dB Gain Compression vs Frequency

40

35

30

25

20

15

SECOND–ORDER INTERCEPT—dBm

10

45678910

POWER SUPPLY VOLTAGE—V

ZO = 50Ω

= 25oC

T

A

SR00200

Figure 9. Second-Order Output Intercept vs Supply Voltage

11
10

9
8

7
6
5
4

VCC = 7V

3
2

VCC = 6V

1

VCC = 5V

0
–1
–2
–3

OUTPUT LEVEL—dBm

ZO = 50Ω

–4
–5
–6

= 25oC

T

A

12 468 2 468

10

VCC = 8V

2

FREQUENCY—MHz

10

Figure 7. Saturated Output Power vs Frequency

1992 Feb 25

3

10

SR00201

30

25

20

15

10

THIRD–ORDER INTERCEPT—dBm

5

45678910

POWER SUPPLY VOLTAGE—V

ZO = 50Ω

= 25oC

T

A

SR00202

Figure 10. Third-Order Intercept vs Supply Voltage

5