INTEGRATED CIRCUITS
NE/SA5204A
Wide-band high-frequency amplifier
Product specification |
1992 Feb 25 |
RF Communications Handbook
Philips Semiconductors
Philips Semiconductors |
Product specification |
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Wide-band high-frequency amplifier |
NE/SA5204A |
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DESCRIPTION
The NE/SA5204A family of wideband amplifiers replaces the
NE/SA5204 family. The `A' parts are fabricated on a rugged 2μm bipolar process featuring excellent statistical process control.
Electrical performance is nomically identical to the original parts.
The NE/SA5204A is a high-frequency amplifier with a fixed insertion gain of 20dB. The gain is flat to ±0.5dB from DC to 200MHz. The -3dB bandwidth is greater than 350MHz. This performance makes the amplifier ideal for cable TV applications. The NE/SA5204A operates with a single supply of 6V, and only draws 25mA of supply current, which is much less than comparable hybrid parts. The noise figure is 4.8dB in a 75Ω system and 6dB in a 50Ω system.
The NE/SA5204A is a relaxed version of the NE5205. Minimum guaranteed bandwidth is relaxed to 350MHz and the ªSº parameter Min/Max limits are specified as typicals only.
Until now, most RF or high-frequency designers had to settle for discrete or hybrid solutions to their amplification problems. Most of these solutions required trade-offs that the designer had to accept in order to use high-frequency gain stages. These include high power consumption, large component count, transformers, large packages with heat sinks, and high part cost. The NE/SA5204A solves these problems by incorporating a wideband amplifier on a single monolithic chip.
The part is well matched to 50 or 75Ω input and output impedances. The standing wave ratios in 50 and 75Ω systems do not exceed 1.5 on either the input or output over the entire DC to 350MHz operating range.
Since the part is a small, monolithic IC die, problems such as stray capacitance are minimized. The die size is small enough to fit into a very cost-effective 8-pin small-outline (SO) package to further reduce parasitic effects.
No external components are needed other than AC-coupling capacitors because the NE/SA5204A is internally compensated and matched to 50 and 75Ω. The amplifier has very good distortion specifications, with second and third-order intermodulation intercepts of +24dBm and +17dBm, respectively, at 100MHz.
The part is well matched for 50Ω test equipment such as signal generators, oscilloscopes, frequency counters, and all kinds of signal analyzers. Other applications at 50Ω include mobile radio, CB radio, and data/video transmission in fiber optics, as well as broadband LANs and telecom systems. A gain greater than 20dB can be achieved by cascading additional NE/SA5204As in series as required, without any degradation in amplifier stability.
PIN CONFIGURATION
N, D Packages
VCC |
1 |
8 |
VCC |
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20dB |
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VIN |
2 |
7 |
VOUT |
GND |
3 |
6 |
GND |
GND |
4 |
5 |
GND |
TOP VIEW
SR00193
Figure 1. Pin Configuration
FEATURES
•Bandwidth (min.)
200 MHz, ±0.5dB
350 MHz, -3dB
•20dB insertion gain
•4.8dB (6dB) noise figure ZO=75Ω (ZO=50Ω)
•No external components required
•Input and output impedances matched to 50/75Ω systems
•Surface-mount package available
•Cascadable
•2000V ESD protection
APPLICATIONS
•Antenna amplifiers
•Amplified splitters
•Signal generators
•Frequency counters
•Oscilloscopes
•Signal analyzers
•Broadband LANs
•Networks
•Modems
•Mobile radio
•Security systems
•Telecommunications
ORDERING INFORMATION
DESCRIPTION |
TEMPERATURE RANGE |
ORDER CODE |
DWG # |
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8-Pin Plastic Dual In-Line Package (DIP) |
0 to +70°C |
NE5204AN |
SOT97-1 |
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8-Pin Plastic Small Outline (SO) package |
0 to +70°C |
NE5204AD |
SOT96-1 |
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8-Pin Plastic Dual In-Line Package (DIP) |
±40 to +85°C |
SA5204AN |
SOT97-1 |
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8-Pin Plastic Small Outline (SO) package |
±40 to +85°C |
SA5204AD |
SOT96-1 |
1992 Feb 25 |
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853-1599 05790 |
Philips Semiconductors |
Product specification |
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Wide-band high-frequency amplifier |
NE/SA5204A |
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ABSOLUTE MAXIMUM RATINGS
SYMBOL |
PARAMETER |
RATING |
UNIT |
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VCC |
Supply voltage |
9 |
V |
VIN |
AC input voltage |
5 |
VP±P |
TA |
Operating ambient temperature range |
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NE grade |
0 to +70 |
°C |
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SA grade |
±40 to +85 |
°C |
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PDMAX |
Maximum power dissipation1, 2 |
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TA=25°C(still±air) |
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N package |
1160 |
mW |
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D package |
780 |
mW |
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TJ |
Junction temperature |
150 |
°C |
TSTG |
Storage temperature range |
±55 to +150 |
°C |
TSOLD |
Lead temperature |
300 |
°C |
(soldering 60s) |
NOTES:
1.Derate above 25°C, at the following rates
N package at 9.3mW/°C D package at 6.2mW/°C
2.See ªPower Dissipation Considerationsº section.
EQUIVALENT SCHEMATIC
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VCC |
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R1 |
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R2 |
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Q3 |
R0 |
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VOUT |
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Q6 |
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Q2 |
VIN |
Q1 |
Q4 |
R3 |
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RF1 |
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RE2 |
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RE1 |
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Q5 |
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RF2 |
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SR00194
Figure 2. Equivalent Schematic
1992 Feb 25 |
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Philips Semiconductors |
Product specification |
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Wide-band high-frequency amplifier |
NE/SA5204A |
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DC ELECTRICAL CHARACTERISTICS
VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C, in all packages, unless otherwise specified.
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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LIMITS |
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UNIT |
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Min |
Typ |
Max |
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VCC |
Operating supply voltage range |
Over temperature |
5 |
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V |
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ICC |
Supply current |
Over temperature |
19 |
25 |
33 |
mA |
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S21 |
Insertion gain |
f=100MHz, over temperature |
16 |
19 |
22 |
dB |
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S11 |
Input return loss |
f=100MHz |
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DC ±550MHz |
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S22 |
Output return loss |
f=100MHz |
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dB |
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DC ±550MHz |
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S12 |
Isolation |
f=100MHz |
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dB |
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DC ±550MHz |
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±18 |
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BW |
Bandwidth |
±0.5dB |
200 |
350 |
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MHz |
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BW |
Bandwidth |
±3dB |
350 |
550 |
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Noise figure (75Ω) |
f=100MHz |
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4.8 |
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dB |
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Noise figure (50Ω) |
f=100MHz |
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6.0 |
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dB |
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Saturated output power |
f=100MHz |
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+7.0 |
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dBm |
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1dB gain compression |
f=100MHz |
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+4.0 |
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dBm |
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Third±order intermodulation inter- |
f=100MHz |
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+17 |
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dBm |
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cept (output) |
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Second±order intermodulation inter- |
f=100MHz |
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+24 |
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dBm |
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cept (output) |
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tR |
Rise time |
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500 |
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ps |
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tP |
Propagation delay |
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500 |
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ps |
SUPPLY CURRENTÐmA
35
34
32
30
TA = 25oC
28
26
24
22
20
18
16
5 |
5.5 |
6 |
6.5 |
7 |
7.5 |
8 |
SUPPLY VOLTAGEÐV
SR00195
NOISE FIGUREÐdBm
9 |
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8 |
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ZO = 50Ω |
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vcc = 8v |
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TA = 25oC |
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vcc = 7v |
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7 |
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vcc = 6v |
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vcc = 5v |
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6 |
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5 |
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8 102 |
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8 103 |
101 |
2 |
4 |
6 |
2 |
4 |
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FREQUENCYÐMHz
SR00196
Figure 3. Supply Current vs Supply Voltage |
Figure 4. Noise Figure vs Frequency |
1992 Feb 25 |
4 |
Philips Semiconductors |
Product specification |
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Wide-band high-frequency amplifier |
NE/SA5204A |
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25 |
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vcc = 8v |
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GAINÐdB |
20 |
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vcc = 7v |
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vcc = 6v |
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INSERTION |
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15 |
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vcc = 5v |
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ZO = 50Ω |
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TA = 25oC |
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10 |
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101 |
2 |
4 |
6 |
8 102 |
2 |
4 |
6 |
8 103 |
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FREQUENCYÐMHz |
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SR00197 |
Figure 5. Insertion Gain vs Frequency (S21)
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25 |
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GAINÐdB |
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TA = 55oC |
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20 |
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TA = 25oC |
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INSERTION |
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TA = 85oC |
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15 |
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TA = |
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125oC |
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VCC = 8V |
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ZO = 50Ω |
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10 |
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8 102 |
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8 103 |
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101 |
2 |
4 |
6 |
2 |
4 |
6 |
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FREQUENCYÐMHz |
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SR00199 |
Figure 6. Insertion Gain vs Frequency (S21)
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10 |
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9 |
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8 |
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LEVELÐdBm |
7 |
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6 |
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5 |
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4 |
VCC = 7V |
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3 |
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2 |
VCC = 6V |
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1 |
VCC = 5V |
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VCC = 8V |
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OUTPUT |
0 |
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±1 |
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±2 |
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±3 |
ZO = 50Ω |
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±4 |
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±5 |
TA = 25oC |
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±6 |
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101 |
2 |
4 |
6 |
8 102 |
2 |
4 |
6 |
8 103 |
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FREQUENCYÐMHz |
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SR00201 |
Figure 7. Saturated Output Power vs Frequency
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9 |
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VCC = 8V |
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7 |
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LEVELÐdBm |
6 |
VCC = 6V |
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5 |
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4 |
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3 |
VCC = 5V |
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VCC = 7V |
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2 |
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1 |
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OUTPUT |
0 |
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±1 |
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±2 |
ZO = 50Ω |
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±3 |
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TA = 25oC |
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±4 |
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±5 |
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±6 |
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101 |
2 |
4 |
6 |
8 102 |
2 |
4 |
6 |
8 103 |
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FREQUENCYÐMHz |
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SR00198 |
Figure 8. 1dB Gain Compression vs Frequency
INTERCEPTÐdBm |
40 |
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35 |
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30 |
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SECOND±ORDER |
25 |
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20 |
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ZO = 50Ω |
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TA = 25oC |
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15 |
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10 |
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9 |
10 |
POWER SUPPLY VOLTAGEÐV
SR00200
Figure 9. Second-Order Output Intercept vs Supply Voltage
INTERCEPTÐdBm |
30 |
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THIRD±ORDER |
20 |
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15 |
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Z |
O = 50Ω |
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TA = 25oC |
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POWER SUPPLY VOLTAGEÐV
SR00202
Figure 10. Third-Order Intercept vs Supply Voltage
1992 Feb 25 |
5 |
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