Philips N74F20D, N74F20N Datasheet

INTEGRATED CIRCUITS

74F20

Dual 4-input NAND gate

Product specification
IC15 Data Handbook

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1989 Mar 03

Philips Semiconductors Product specification

74F20Dual 4-input NAND gate

TYPE

TYPICAL

PROPAGATION

DELA Y

TYPICAL

SUPPLY CURRENT

(TOTAL)

74F20 3.5ns 2.2mA

ORDERING INFORMATION

COMMERCIAL RANGE

DESCRIPTION

14-pin plastic DIP N74F20N SOT27-1

VCC = 5V ±10%,

T

= 0°C to +70°C

amb

PKG DWG #

PIN CONFIGURATION

D0a

1

D0b

2

NC

3

D0c

4

D0d

5

Q0

6

GND

14
13
12
11
10

9
87

SF00065

V
D1d
D1c

NC
D1b
D1a
Q1

CC

14-pin plastic SO N74F20D SOT108-1

INPUT AND OUTPUT LOADING AND FAN-OUT TABLE

PINS DESCRIPTION 74F (U.L.) HIGH/LOW LOAD VALUE HIGH/LOW

Dna, Dnb, Dnc, Dnd Data inputs 1.0/1.0 20µA/0.6mA

Q0, Q1 Data outputs 50/33 1.0mA/20mA

NOTE: One (1.0) FAST unit load is defined as: 20µA in the High state and 0.6mA in the Low state.

LOGIC DIAGRAM

VCC = Pin 14
GND = Pin 7

D0a
D0b
D0c
D0d

D1a
D1b
D1c
D1d

1
2
4
5

9

10
12
13

6

8

SF00066

Q0

Q1

FUNCTION TABLE

INPUTS OUTPUT

Dna Dnb Dnc Dnd Qn

L X X X H
X L X X H
X X L X H
X X X L H

H H H H L

NOTES:

H = High voltage level
L = Low voltage level
X = Don’t care

LOGIC SYMBOL

12459101213

D1a D1bD0a D0b D0c D1c D1dD0d

Q0 Q1

VCC = Pin 14
GND = Pin 7

March 3, 1989 853–0332 95935

68

SF00067

IEC/IEEE SYMBOL

2

1

2
4

5

9

10
12

13

&

6

8

SF00068

Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

1

UNIT

VOHHigh-level output voltage

V

VOLLow-level output voltage

V

ICCSupply current (total)

V

MAX

mA

74F20Dual 4-input NAND gate

ABSOLUTE MAXIMUM RATINGS

(Operation beyond the limits set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)

SYMBOL

V
V
I

IN

V
I

OUT

T
T

CC
IN

OUT

amb
stg

Supply voltage –0.5 to +7.0 V
Input voltage –0.5 to +7.0 V
Input current –30 to +5 mA
Voltage applied to output in High output state –0.5 to V
Current applied to output in Low output state 40 mA
Operating free-air temperature range 0 to +70 °C
Storage temperature range –65 to +150 °C

RECOMMENDED OPERATING CONDITIONS

V
V
V
I
I
I
T

CC
IH

IL
IK
OH
OL

amb

Supply voltage 4.5 5.0 5.5 V
High-level input voltage 2.0 V
Low-level input voltage 0.8 V
Input clamp current –18 mA
High-level output current –1 mA
Low-level output current 20 mA
Operating free-air temperature range 0 +70 °C

PARAMETER RATING UNIT

CC

V

LIMITS

MIN NOM MAX

DC ELECTRICAL CHARACTERISTICS

(Over recommended operating free-air temperature range unless otherwise noted.)

LIMITS

MIN TYP

p

p

V

IK

I

I

I

IH

I

IL

I

OS

Input clamp voltage VCC = MIN, II = I
Input current at maximum input voltage VCC = MAX, VI = 7.0V 100 µA

High-level input current VCC = MAX, VI = 2.7V 20 µA
Low-level input current VCC = MAX, VI = 0.5V –0.6 mA
Short-circuit output current

3

pp

VCC = MIN, VIL = MAX ±10%V
VIH = MIN, IOH = MAX ±5%V

CC

VCC = MIN, VIL = MAX ±10%V
VIH = MIN, IOL = MAX ±5%V

IK

CC

VCC = MAX –60 –150 mA

I

CCH

I

CCL

CC

=

VIN = GND 0.9 1.4

VIN = 4.5V 3.4 5.1

CC

CC

2.5

2.7 3.4

NOTES:

1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.

2. All typical values are at V

3. Not more than one output should be shorted at a time. For testing I

= 5V, T

CC

techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting

amb

= 25°C.

, the use of high-speed test apparatus and/or sample-and-hold

OS

of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I

tests should be performed last.

OS

2

MAX

0.30 0.50

0.30 0.50

–0.73 –1.2 V

March 3, 1989

3