Philips N74F189AN, N74F189AD Datasheet

INTEGRATED CIRCUITS

74F189A

64-bit TTL bipolar RAM, inverting (3-State)

Product specification

1990 Feb 23

IC15 Data Handbook

m n r

Philips Semiconductors	Product specification
64-bit TTL bipolar RAM, inverting (3-State)	74F189A

FEATURES

•High speed performance

•Replaces 74F189

•Address access time: 8ns max vs 28ns for 74F189

•Power dissipation: 4.3mW/bit

•Schottky clamp TTL

•One chip enable

•Inverting outputs (for non-inverting outputs see 74F219A)

•3-State outputs

•74F189A in 150 mil wide SO is preferred options for new designs

are fully decoded on chip. The outputs are in high impedance state

whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data is the complement of the stored data.

		TYPICAL
	TYPICAL	SUPPLY
	ACCESS	CURRENT
TYPE	TIME	( TOTAL)
74F189A	5.0ns	55mA

DESCRIPTION

The 74F189A is a high speed, 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and

ORDERING INFORMATION

ORDER CODE

DESCRIPTION

COMMERCIAL RANGE

DRAWING NUMBER

VCC = 5V ±10%, Tamb = 0°C to +70°C

16-pin plastic Dual In-line Package

N74F189AN

SOT38-4

16-pin plastic Small Outline (150mil)

N74F189AD

SOT109-1

INPUT AND OUTPUT LOADING AND FAN OUT TABLE

PINS

DESCRIPTION

74F (U.L.)

LOAD VALUE

HIGH/LOW

HIGH/LOW

D0 ± D3

Data inputs

1.0/1.0

20μA/0.6mA

A0 ± A3

Address inputs

1.0/1.0

20μA/0.6mA

Chip enable input (active low)

1.0/2.0

20μA/1.2mA

CE

Write enable input (active low)

1.0/2.0

20μA/1.2mA

WE

Data outputs

150/40

3mA/24mA

Q0 ± Q3

NOTE: One (1.0) FAST unit load is defined as: 20μA in the high state and 0.6mA in the low state.

PIN CONFIGURATION

		A0					1		16	VCC
		CE					2		15	A1
										A2
	WE						3		14
		D0					4		13	A3
										D3
		Q0					5		12
		D1
							6		11		Q3
											D2
		Q1					7		10
GND
						8			9		Q2
								SF00299

LOGIC SYMBOL

		4		6		10		12
		D0		D1		D2		D3
1		A0
15		A1
14		A2
13		A3
2		CE
3		WE
		Q0		Q1		Q2 Q3
VCC = pin 16		5		7		9		11
GND = pin 8

SF00300

1990 Feb 23

2

853±1309 98908

Philips Semiconductors	Product specification
64-bit TTL bipolar RAM, inverting (3-State)	74F189A

IEC/IEEE SYMBOL

FUNCTION TABLE

RAM 16X4

1

0

15

	14		0
		A 15
	13
		1

2

G1

31 EN [READ]

1 C2 [WRITE]

4								5
	A,2D		A
6							7
10							9
12							11

INPUTS

OUTPUT

OPERATING

Dn

n

MODE

CE

WE

Q

L

H

X

Complement of stored

Read

data

L

L

L

High

Write ª0º

impedance

H

L

H

High impedance

Write ª1º

H

X

X

High impedance

Disable input

NOTES:

H = High voltage level

SF00301

L = Low voltage level

X = Don't care

LOGIC DIAGRAM

D0

D1

D2

D3

4

6

10

12

3

Data buffers

WE

2

1

CE

A0

15

16±word x

A1

Decoder

Address

4±bit

14

Drivers

Decoder

memory cell

A2

13

array

A3

Output buffers

VCC = Pin 16

5

7

9

11

Q0 Q1

Q2 Q3

GND = Pin 8

SF00302

ABSOLUTE MAXIMUM RATINGS

(Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the operating free air temperature range.)

SYMBOL	PARAMETER	RATING	UNIT
VCC	Supply voltage	±0.5 to +7.0	V
VIN	Input voltage	±0.5 to +7.0	V
IIN	Input current	±30 to +5	mA
VOUT	Voltage applied to output in high output state	±0.5 to V	V
		CC
IOUT	Current applied to output in low output state	48	mA
T	Operating free air temperature range	0 to +70	°
amb			C
T	Storage temperature range	±65 to +150	°
stg			C

1990 Feb 23

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