Philips MPSA92 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA92
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 27
Philips Semiconductors Product specification
PNP high-voltage transistor MPSA92
FEATURES
• Low current (max. 500 mA)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: MPSA42.
handbook, halfpage
1
2
3
2
MAM280
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−300 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1
3
1999 Apr 27 2
Philips Semiconductors Product specification
PNP high-voltage transistor MPSA92
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= −200 V −−250 nA
emitter cut-off current IC= 0; VBE= −3V −−100 nA
DC current gain VCE= −10 V; note 1
= −1mA 25 −
I
C
I
=−10 mA 40 −
C
= −30 mA 25 −
I
C
collector-emitter saturation voltage IC= −20 mA; IB= −2 mA; note 1 −−500 mV
base-emitter saturation voltage IC= −20 mA; IB= −2 mA; note 1 −−900 mV
collector capacitance IE=ie= 0; VCB= −20 V; f = 1 MHz − 6pF
transition frequency IC= −10 mA; VCE= −20 V;
50 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
Loading...