Philips MPSA64 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA64
PNP Darlington transistor
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 27
Philips Semiconductors Product specification
PNP Darlington transistor MPSA64
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
APPLICATIONS
• High gain amplification.
21
TR1
TR2
3
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: MPSA14.
handbook, halfpage
1
2
3
MAM253
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−1A
base current (DC) −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP Darlington transistor MPSA64
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −30 V −−100 nA
emitter cut-off current IC= 0; VEB= −10 V −−100 nA
DC current gain IC= −10 mA; VCE= −5 V; see Fig.2 10000 −
= −100 mA; VCE= −5 V; see Fig.2 20000 −
I
C
collector-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−1.5 V
base-emitter saturation voltage IC= −100 mA; IB= −0.1 mA −−1.5 V
base-emitter on-state voltage IC= −100 mA; VCE= −5V −−2V
transition frequency IC= −100 mA; VCE= −5 V; f = 100 MHz 125 − MHz
100000
handbook, full pagewidth
h
FE
80000
60000
40000
20000
0
−1 −10
VCE= −2V.
−10
Fig.2 DC current gain; typical values.
MGD836
2
IC (mA)
−10
3
1999 Apr 27 3
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