Philips MPSA56 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA56
PNP general purpose transistor
Product specification
Supersedes data of 1998 Jul 21
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistor MPSA56
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: MPSA06.
handbook, halfpage
1
2
3
MAM280
1
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−80 V
collector-emitter voltage open base −−80 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor MPSA56
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= −80 V −−50 nA
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −10 mA; VCE= −1 V 100 −
= −100 mA; VCE= −1 V 100 −
I
C
collector-emitter saturation voltage IC= −100 mA; IB= −10 mA −−250 mV
base-emitter voltage IC= −100 mA; VCE= −1V −−1.2 V
transition frequency IC= −100 mA; VCE= −1 V; f = 100 MHz 50 − MHz
1999 Apr 27 3
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