Philips MPSA44 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
MPSA44
NPN high-voltage transistor
Product specification
Supersedes data of 1998 Nov 26
1999 Apr 27
Philips Semiconductors Product specification
NPN high-voltage transistor MPSA44
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 400 V).
PINNING
PIN DESCRIPTION
1 collector
2 base
APPLICATIONS
3 emitter
• Telecommunication applications.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package.
handbook, halfpage
1
2
3
2
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 500 V
collector-emitter voltage open base − 400 V
emitter-base voltage open collector − 6V
collector current (DC) − 300 mA
peak collector current − 600 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1
3
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
NPN high-voltage transistor MPSA44
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= 400 V − 100 nA
I
= 0; VCB= 400 V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 1 mA; VCE=10V 40 −
= 10 mA; VCE= 10 V 50 200
I
C
I
= 50 mA; VCE= 10 V; note 1 45 −
C
I
= 100 mA; VCE= 10 V; note 1 40 −
C
collector-emitter saturation voltage IC= 1 mA; IB= 0.1 mA − 400 mV
I
= 10 mA; IB=1mA − 500 mV
C
I
= 50 mA; IB= 5 mA; note 1 − 750 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA; note 1 − 850 mV
collector capacitance IE=ie= 0; VCB=20V; f=1MHz − 7pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 180 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 20 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 27 3
Loading...