Philips MMBTA42 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
MMBTA42
NPN high-voltage transistor
Product specification 2000 Apr 11
Philips Semiconductors Product specification
NPN high-voltage transistor MMBTA42
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony
• Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: MMBTA92.
MARKING
TYPE NUMBER MARKING CODE
(1)
MMBTA42 7D∗
Note
1. ∗ = p: made in Hong Kong.
∗ = t: made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 300 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11 2
Philips Semiconductors Product specification
NPN high-voltage transistor MMBTA42
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
re
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= 200 V − 100 nA
emitter cut-off current IC= 0; VEB=6V − 100 nA
DC current gain VCE=10V
I
= 1 mA 25 −
C
I
=10mA 40 −
C
I
=30mA 40 −
C
collector-emitter saturation voltage IC= 20 mA; IB=2mA − 500 mV
base-emitter saturation voltage IC= 20 mA; IB=2mA − 900 mV
feedback capacitance IC=ic= 0; VCB=20V;
− 3pF
f = 1 MHz
transition frequency IC= 10 mA; VCE=20V;
50 − MHz
f = 100 MHz
2000 Apr 11 3
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