Philips MMBT3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
MMBT3904
NPN switching transistor
Product specification 2000 Apr 11
Philips Semiconductors Product specification
NPN switching transistor MMBT3904
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: MMBT3906.
MARKING
TYPE NUMBER MARKING CODE
(1)
MMBT3904 7A∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current DC − 200 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11 2
Philips Semiconductors Product specification
NPN switching transistor MMBT3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; note 1; Fig.2
I
= 0.1 mA 60 −
C
I
= 1 mA 80 −
C
I
= 10 mA 100 300
C
I
=50mA 60 −
C
I
= 100 mA 30 −
C
collector-emitter saturation
voltage
IC= 10 mA; IB=1mA − 200 mV
= 50 mA; IB=5mA − 200 mV
I
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 650 850 mV
I
= 50 mA; IB=5mA − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VBE= 500 mV;
− 8pF
f = 1 MHz
transition frequency IC= 10 mA; VCE=20V;
300 − MHz
f = 100 MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
turn-on time I
delay time − 35 ns
I
Con
Boff
= 10 mA; I
= −1mA
Bon
= 1 mA;
− 65 ns
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2000 Apr 11 3
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