Philips mb2245 DATASHEETS

INTEGRATED CIRCUITS

MB2245

16-bit transceivers with direction pins (3-State)

Product specification Supersedes data of 1993 Aug 18 IC23 Data Handbook

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1998 Jan 16

Philips Semiconductors Product specification

È È

MB224516-bit transceiver with direction pins (3-State)

FEA TURES

•16-bit bidirectional bus interface

•Power–up 3-State

•Multiple V

and GND pins minimize switching noise

CC

•3-State buffers

•Output capability: +64 mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

DESCRIPTION

The MB2245 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2245 device is a 16-bit transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features two Output Enable (1OE inputs for easy cascading and two Direction (1DIR, 2DIR) inputs for direction control.

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200V per Machine Model

•Inputs are disabled during 3-State mode

QUICK REFERENCE DATA

SYMBOL PARAMETER

t

PLH

t

PHL

C

I

CCZ

IN

I/O

Propagation delay nAx to nBx or nBx to nAx

CL = 50pF; VCC = 5V

Input capacitance VI = 0V or V I/O pin capacitance VO = 0V or VCC; 3-State 7 pF Total supply current Outputs disabled; VCC = 5.5V 65 µA

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2245 BB MB2245 BB SOT379-1

CONDITIONS

T

= 25°C; GND = 0V

amb

CC

TYPICAL UNIT

3.2

3.1 4 pF

, 2OE)

ns

PIN CONFIGURATION

1B3

1B2

GND

1B1

1B0

1DIR

GND

1OE

1A0

1A1

GND

1A2

47 4446 434950 41 40425152 4548

1

V

CC

1B4

2

1B5

3 4

GND

1B6

5 6

1B7

GND

2B0 2B1

GND

2B2 2B3

V

CC

7 8

9 10 11 12

13

2B4

2B5

52–pin PQFP

2B6

2B7

GND

19 2220 231716 25 26241514 2118

2DIR

GND

2OE

2A7

2A6

GND

2A5

1A3

39 38 37 36 35 34 33 32 31 30 29 28

27

2A4

SB00040

V

CC

1A4 1A5 GND 1A6 1A7 GND 2A0 2A1 GND 2A2 2A3

V

CC

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

47, 19 1DIR, 2DIR

44, 43, 41, 40, 38, 37, 35, 34, 32, 31, 29, 28,

1A0 – 1A7,

2A0 – 2A7

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

1B0 – 1B7,

2B0 – 2B7

14, 15, 17, 18

45, 21 1OE, 2OE Output enable (Active-Low)

4, 7, 10, 16, 20,

24, 30, 33, 36,

GND Ground (0V)

42, 46, 50

1, 13, 27, 39 V

CC

Direction control inputs (Active-High)

Data inputs/outputs (A side)

Data outputs/outputs (B side)

Positive supply voltage

1998 Jan 16 853–1573 18869

2

Philips Semiconductors Product specification

MB224516-bit transceiver with direction pins (3-State)

LOGIC SYMBOL

47

1DIR

45

1OE

44

1A0

43

1A1

41

1A2

40

1A3

38

1A4

37

1A5

35

1A6

34 6

1A7

48

1B0

49

1B1

51

1B2

52

1B3

2

1B4

3

1B5

5

1B6

1B7

LOGIC SYMBOL (IEEE/IEC)

19

2DIR

32

2A0

31

2A1

29

2A2

28

2A3

26

2A4

25

2A5

23

2A6

22 18

2A7

21

2OE

8

2B0

9

2B1

11

2B2

12

2B3

14

2B4

15

2B5

17

2B6

2B7

SB00041

FUNCTION TABLE

INPUTS INPUTS/OUTPUTS

nOE nDIR nAx nBx

L L A = B Inputs L H Inputs B = A H X Z Z

45 47

44

43 41 51 40 52 38 2 37 3 35 5 34 6

G3 3 EN1 (BA)

3 EN2 (AB)

∇ 1

2 ∇

SB00042

21 19

48

49

32

31 29 11 28 12 26 14 25 15 23 17 22 18

G3 3 EN1 (BA)

3 EN2 (AB)

∇ 1

2 ∇

8

9

SB00043

1998 Jan 16

3

Philips Semiconductors Product specification

MB224516-bit transceiver with direction pins (3-State)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

V

CC

I

IK

V

I

OK

V

OUT

I

OUT

T

stg

DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C

PARAMETER CONDITIONS RATING UNIT

3

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

Min Max

V

CC

V V V I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V T

amb

DC supply voltage 4.5 5.5 V Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

High-level output current –32 mA Low-level output current 64 mA

Operating free-air temperature range –40 +85 °C

CC

V

1998 Jan 16

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