Philips mb2244 DATASHEETS
INTEGRATED CIRCUITS
MB2244
16-bit buffer/line driver (3-State)
Product specification
Supersedes data of 1993 Aug 24
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors Product specification
È È
MB224416-bit buffer/line driver (3-State)
FEA TURES
•16-bit bus interface
•Multiple V
and GND pins minimize switching noise
CC
•Power-up 3-State
•3-State buffers
•Output capability: +64 mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
SYMBOL PARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
nAx to nYx
CL = 50pF; VCC = 5V
Input capacitance VI = 0V or V
Output capacitance VO = 0V or VCC; 3-State 7 pF
Total supply current Outputs disabled; VCC = 5.5V 50 µA
DESCRIPTION
The MB2244 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The MB2244 device is an 16-bit buffer that is ideal for driving bus
lines. The device features four Output Enables (1OE
), each controlling four of the 3-State outputs.
4OE
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
TYPICAL UNIT
3.2
3.1
, 2OE, 3OE,
4 pF
ns
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
52–pin plastic Quad Flat Pack –40°C to +85°C MB2244 BB MB2244 BB SOT379-1
PIN CONFIGURATION
1Y3
1Y2
GND
1Y1
1Y0
1OE
GND
20E
1A0
1A1
GND
1A2
47 4446 434950 41 40425152 4548
1
V
CC
2Y0
2
2Y1
3
4
GND
5
2Y2
6
2Y3
7
GND
8
3Y0
9
3Y1
10
GND
11
3Y2
12
3Y3
13
V
CC
4Y0
4Y1
GND
52-Pin
Plastic Quad Flat Pack
19 2220 231716 25 26241514 2118
4Y2
4Y3
3OE
4OE
GND
4A3
4A2
GND
4A1
1A3
39
38
37
36
35
34
33
32
31
30
29
28
27
4A0
SB00033
V
CC
2A0
2A1
GND
2A2
2A3
GND
3A0
3A1
GND
3A2
3A3
V
CC
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
44, 43, 41, 40,
38, 37, 35, 34,
32, 31, 29, 28,
26, 25, 23, 22
48, 49, 51, 52,
2, 3, 5, 6,
8, 9, 11, 12,
14, 15, 17, 18
47, 45,
19, 21
4, 7, 10, 16,
20, 24, 30, 33,
36, 42, 46, 50
1, 13, 27, 39 V
1A0 – 1A3,
2A0 – 2A3,
3A0 – 3A3,
Data inputs
4A0 – 4A3
1Y0 – 1Y3,
2Y0 – 2Y3,
3Y0 – 3Y3,
Data outputs
4Y0 – 4Y3
1OE, 2OE,
3OE, 4OE
Output enables
GND Ground (0V)
CC
Positive supply voltage
1998 Jan 16 853–1572 18869
2
Philips Semiconductors Product specification
MB224416-bit buffer/line driver (3-State)
LOGIC SYMBOL
1A0
44
1A1
43
1A2
41
1A3
40
1OE
47
2A0
38
2A1
37
2A2
35
2A3
34
2OE
45
1Y0
1Y1
1Y2
1Y3
2Y0
2Y1
2Y2
2Y3
FUNCTION TABLE
INPUTS OUTPUTS
nOE nAx nYx
L L L
L H H
H X Z
LOGIC SYMBOL (IEEE/IEC)
3A0
48
32
3A1
31
49
3A2
51
29
3A3
28
52
3OE
19
4A0
2
26
4A1
3
25
4A2
5
23
4A3
6
22
4OE
21
3Y0
3Y1
3Y2
3Y3
4Y0
4Y1
4Y2
4Y3
SB00034
8
9
11
12
14
15
17
18
47
44
43
41
40
45
38 2
37 3
35 5
34 6
EN
EN
19
32
48
31
49
29
51
28
52
21
26 14
25 15
23 17
22 18
EN
EN
8
9
11
12
SB00035
ABSOLUTE MAXIMUM RA TINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage
DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C
PARAMETER CONDITIONS RATING UNIT
3
3
1, 2
–1.2 to +7.0 V
output in Off or High state –0.5 to +5.5 V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
3
Philips Semiconductors Product specification
MB224416-bit buffer/line driver (3-State)
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS UNIT
Min Max
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 10 ns/V
T
amb
DC ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER TEST CONDITIONS T
V
IK
V
OH
V
OL
I
I
OFF
I
PU/PD
I
OZH
I
OZL
I
CEX
I
O
I
CCH
I
CCL
I
CCZ
∆I
CC
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
CC
High-level output current –32 mA
Low-level output current 64 mA
Operating free-air temperature range –40 +85 °C
LIMITS
T
amb
= +25°C
amb
to +85°C
Min Typ Max Min Max
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
VCC = 4.5V; IOH = –3mA; VI = VIL or V
High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH
IH
IH
IH
2.5 2.9 2.5 V
3.0 3.4 3.0 V
2.0 2.4 2.0 V
0.42 0.55 0.55 V
Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Power-up/down 3-State
output current
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
Output current
1
Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V
Additional supply current per
input pin
2
VCC = 2.0V; VO = 0.5V; VI = GND or VCC;
VOE = V
CC
IH
IH
CC
±5.0 ±50 ±50 µA
5.0 50 50 µA
–5.0 –50 –50 µA
5.0 50 50 µA
VCC = 5.5V; VO = 2.5V –50 –100 –180 –50 –180 mA
VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs 3-State;
VI = GND or V
CC
Outputs enabled, one input at 3.4V , other
inputs at VCC or GND; VCC = 5.5V
CC
CC
50 100 100 µA
48 60 60 mA
50 100 100 µA
0.5 1.5 1.5 mA
= –40°C
V
UNIT
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
1998 Jan 16
4
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