Philips LCE2009S DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

LBE2003S; LBE2009S;
LCE2009S

NPN microwave power transistors

Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15

1997 Mar 03

Philips Semiconductors Product specification

NPN microwave power transistors

FEATURES

• Diffused emitter ballasting resistors

• Self-aligned process entirely ion implanted and gold

metallization

• Optimum temperature profile

• Excellent performance and reliability.

APPLICATIONS

• Common emitter class-A linear power amplifiers up
to 4 GHz.

handbook, halfpage

1

Top view

4

c

3

b

e

2

MAM329

LBE2003S;

LBE2009S; LCE2009S

DESCRIPTION

The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.The LCE2009S is a
maintenance type in a SOT442A metal ceramic capstan
package.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

handbook, halfpage

1

Top view

4

c

3

b

e

2

MAM330

Marking code: LBE2003S = 407; LBE2009S = 409.

Fig.1 Simplified outline and symbol (SOT441A).

Marking code: LCE2009S = 408.

Fig.2 Simplified outline and symbol (SOT442A).

QUICK REFERENCE DATA

Microwave performance up to T

TYPE NUMBER

MODE OF

OPERATION

=25°C in a common emitter class-A amplifier.

mb

f

(GHz)

V

(V)

CE

I

C

(mA)

P

L1

(mW)

G

po

(dB)

Z

(Ω)

i

Z

L

(Ω)

LBE2003S Class-A (CW) linear 2 18 30 ≥200 ≥10 6.2 + j30 17.5 + j7
LBE2009S
LCE2009S

Class-A (CW) linear 2 18 110 ≥700 ≥9 7.5 + j15 17.5 + j39

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03 2

Philips Semiconductors Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter 40 V
collector-emitter voltage

LBE2003S R
LBE2009S; LCE2009S R

= 220 Ω−35 V

BE

= 100 Ω−35 V

BE

collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current (DC)

LBE2003S − 90 mA
LBE2009S; LCE2009S − 250 mA

total power dissipation Tmb≤ 75 °C

LBE2003S − 1.4 W

LBE2009S; LCE2009S − 3.5 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
soldering temperature at 0.3 mm from case; t = 10 s − 235 °C

2

10

handbook, halfpage

I

C

(mA)

(2)

(1)

10

1

10

15 20

Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 220 Ω.
(3) Second breakdown limit (independent of temperature).

(3)

40 60 100

30

Fig.3 DC SOAR; LBE2003S.

MGD996

VCE (V)

handbook, halfpage

2

P

tot

(W)

1.5

1

0.5

0

−50 0 200

50 100 150

MGD989

Tmb (oC)

Fig.4 Power dissipation derating as a function of

mounting-base temperature; LBE2003S.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03 3

Philips Semiconductors Product specification

NPN microwave power transistors

3

10

handbook, halfpage

I

C

(mA)

2

10

(1)

10

1

10 20 40

Tmb≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 100 Ω.
(3) Second breakdown limit (independant of temperature).

(3)

(2)

Fig.5 DC SOAR; LBE2009S, LCE2009S

MGD990

VCE (V)

10

LBE2003S; LBE2009S;

LCE2009S

handbook, halfpage

2

4

P

tot

(W)

3

2

1

0

−50 0

50 100 150

Fig.6 Power dissipation derating as a function

of mounting-base temperature;
LBE2009S, LCE2009S.

MGD991

Tmb (

200



o

C)

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

thermal resistance from junction to mounting-base Tj=75°C; note 1

LBE2003S 65 K/W
LBE2009S; LCE2009S 36 K/W

R

th mb-h

thermal resistance from mounting-base to heatsink Tj=75°C; note 1 1.5 K/W

Note

1. See “

Mounting recommendations in the General part of handbook SC15”

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

.

1997 Mar 03 4

Philips Semiconductors Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

CHARACTERISTICS

T

=25°C unless otherwise specified.

mb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CBO

I

CER

I

EBO

h

C

C

C

FE

cb

ce

eb

collector cut-off current VCB= 20 V; IE=0 −−0.1 µA
collector cut-off current VCB= 40 V; IE=0

LBE2003S −−150 µA
LBE2009S; LCE2009S −−250 µA

collector cut-off current

LBE2003S V
LBE2009S; LCE2009S V

= 35 V; RBE= 220 Ω− − 500 µA

CB

= 35 V; RBE= 100 Ω− − 1000 µA

CB

emitter cut-off current VEB= 1.5 V; IC=0

LBE2003S −−0.05 µA
LBE2009S; LCE2009S −−0.2 µA

DC current gain VCE=5V; IC=30mA 15 − 150

=5V; IC= 110 mA 15 − 150

V

CE

collector-base capacitance VCB= 18 V; VEB= 1.5 V;

IE=IC= 0; f = 1 MHz
LBE2003S − 0.3 − pF
LBE2009S; LCE2009S − 0.6 − pF

collector-emitter capacitance VCE= 18 V; VEB= 1.5 V;

IE=IC= 0; f = 1 MHz
LBE2003S − 0.45 − pF
LBE2009S; LCE2009S − 0.6 − pF

emitter-base capacitance VCB= 10 V; VEB=1V;

IE=IC= 0; f = 1 MHz
LBE2003S − 1.7 − pF
LBE2009S; LCE2009S − 3.3 − pF

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03 5