Philips LBE2009S, LBE2003S Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

LBE2003S; LBE2009S

NPN microwave power transistors

Product specification			1998 Feb 16
Supersedes data of 1997 Mar 03

Philips Semiconductors	Product specification
NPN microwave power transistors	LBE2003S; LBE2009S

FEATURES

·Diffused emitter ballasting resistors

·Self-aligned process entirely ion implanted and gold metallization

·Optimum temperature profile

·Excellent performance and reliability.

APPLICATIONS

·Common emitter class-A linear power amplifiers up to 4 GHz.

DESCRIPTION

The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.

QUICK REFERENCE DATA

PINNING

PIN	DESCRIPTION
1	collector
2	emitter
3	base
4	emitter
handbook, halfpage	4
	c
	3
1	b
	e
	2
Top view	MAM329

Marking code: LBE2003S = 407; LBE2009S = 409.

Fig.1 Simplified outline and symbol (SOT441A).

Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.

	TYPE NUMBER	MODE OF	f	VCE	IC	PL1	Gpo	Zi	ZL
		OPERATION	(GHz)	(V)	(mA)	(mW)	(dB)	(W)	(W)
	LBE2003S	Class-A (CW) linear	2	18	30	³200	³10	6.2 + j30	17.5 + j7
	LBE2009S	Class-A (CW) linear	2	18	110	³700	³9	7.5 + j15	17.5 + j39

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1998 Feb 16

2

Philips Semiconductors					Product specification
NPN microwave power transistors			LBE2003S; LBE2009S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter			40	V
VCER	collector-emitter voltage
	LBE2003S	RBE = 220 Ω		−	35	V
	LBE2009S	RBE = 100 Ω		−	35	V
VCEO	collector-emitter voltage	open base		−	16	V
VEBO	emitter-base voltage	open collector		−	3	V
IC	collector current (DC)
	LBE2003S			−	90	mA
	LBE2009S			−	250	mA
Ptot	total power dissipation	Tmb ≤ 75 °C
	LBE2003S			−	1.4	W
	LBE2009S			−	3.5	W
Tstg	storage temperature			−65	+150	°C
Tj	operating junction temperature			−	200	°C
Tsld	soldering temperature	at 0.3 mm from case; t = 10 s		−	235	°C

102						MGD996	2					MGD989
handbook, halfpage							handbook, halfpage
							Ptot
IC							(W)
							1.5
(mA)
(1)		(2)	(3)
10							1
							0.5
1							0
10	15	20	30	40	60	100	−50	0	50	100	150	200
						VCE (V)					Tmb (oC)

Tmb ≤ 75 °C.

(1)Region of permissible DC operation.

(2)Permissible extension provided RBE ≤ 220 Ω.

(3)Second breakdown limit (independent of temperature).

Fig.3	Power dissipation derating as a function of
Fig.2 DC SOAR; LBE2003S.	mounting-base temperature; LBE2003S.

1998 Feb 16

3

Philips Semiconductors	Product specification
NPN microwave power transistors	LBE2003S; LBE2009S

103			MGD990		4				MGD991
handbook, halfpage					handbook, halfpage
IC					P tot
					(W)
(mA)
		(3)			3
102
					2
(1)		(2)
10
					1
1	20	40		102	0	0	50	100	150		200
10			VCE (V)		−50					o
									Tmb (		C)

Tmb ≤ 75 °C.

(1)Region of permissible DC operation.

(2)Permissible extension provided RBE ≤ 100 Ω.

(3)Second breakdown limit (independant of temperature).

					Fig.5 Power dissipation derating as a function of
Fig.4	DC SOAR; LBE2009S.					mounting-base temperature; LBE2009S.
THERMAL CHARACTERISTICS
SYMBOL		PARAMETER				CONDITIONS	MAX.	UNIT
Rth j-mb		thermal resistance from junction to mounting-base				Tj = 75 °C
		LBE2003S					65	K/W
		LBE2009S					36	K/W
Rth mb-h		thermal resistance from mounting-base to heatsink				Tj = 75 °C	1.5	K/W

1998 Feb 16

4

Philips Semiconductors						Product specification
NPN microwave power transistors				LBE2003S; LBE2009S
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.		TYP.	MAX.	UNIT
ICBO	collector cut-off current	VCB = 20 V; IE = 0	−		−	0.1	μA
ICBO	collector cut-off current	VCB = 40 V; IE = 0
	LBE2003S		−		−	150	μA
	LBE2009S		−		−	250	μA
ICER	collector cut-off current
	LBE2003S	VCB = 35 V; RBE = 220 Ω	−		−	500	μA
	LBE2009S	VCB = 35 V; RBE = 100 Ω	−		−	1000	μA
IEBO	emitter cut-off current	VEB = 1.5 V; IC = 0
	LBE2003S		−		−	0.05	μA
	LBE2009S		−		−	0.2	μA
hFE	DC current gain	VCE = 5 V; IC = 30 mA	15		−	150
		VCE = 5 V; IC = 110 mA	15		−	150
Ccb	collector-base capacitance	VCB = 18 V; VEB = 1.5 V;
		IE = IC = 0; f = 1 MHz
	LBE2003S		−		0.3	−	pF
	LBE2009S		−		0.6	−	pF
Cce	collector-emitter capacitance	VCE = 18 V; VEB = 1.5 V;
		IE = IC = 0; f = 1 MHz
	LBE2003S		−		0.45	−	pF
	LBE2009S		−		0.6	−	pF
Ceb	emitter-base capacitance	VCB = 10 V; VEB = 1 V;
		IE = IC = 0; f = 1 MHz
	LBE2003S		−		1.7	−	pF
	LBE2009S		−		3.3	−	pF

1998 Feb 16

5