Philips LBE2009S, LBE2003S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LBE2003S; LBE2009S
NPN microwave power transistors
Product specification
Supersedes data of 1997 Mar 03
1998 Feb 16
Philips Semiconductors Product specification
NPN microwave power transistors LBE2003S; LBE2009S
FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold
metallization
• Optimum temperature profile
• Excellent performance and reliability.
APPLICATIONS
• Common emitter class-A linear power amplifiers up
to 4 GHz.
DESCRIPTION
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
handbook, halfpage
Marking code: LBE2003S = 407; LBE2009S = 409.
1
Top view
4
3
b
2
Fig.1 Simplified outline and symbol (SOT441A).
c
e
MAM329
QUICK REFERENCE DATA
Microwave performance up to T
TYPE NUMBER
MODE OF
OPERATION
=25°C in a common emitter class-A amplifier.
mb
f
(GHz)
V
(V)
CE
I
C
(mA)
P
L1
(mW)
G
po
(dB)
Z
(Ω)
i
Z
L
(Ω)
LBE2003S Class-A (CW) linear 2 18 30 ≥200 ≥10 6.2 + j30 17.5 + j7
LBE2009S Class-A (CW) linear 2 18 110 ≥700 ≥9 7.5 + j15 17.5 + j39
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Feb 16 2
Philips Semiconductors Product specification
NPN microwave power transistors LBE2003S; LBE2009S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter 40 V
collector-emitter voltage
LBE2003S R
LBE2009S R
= 220 Ω−35 V
BE
= 100 Ω−35 V
BE
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current (DC)
LBE2003S − 90 mA
LBE2009S − 250 mA
total power dissipation Tmb≤ 75 °C
LBE2003S − 1.4 W
LBE2009S − 3.5 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
soldering temperature at 0.3 mm from case; t = 10 s − 235 °C
2
10
handbook, halfpage
I
C
(mA)
(2)
(1)
10
1
10
15 20
Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 220 Ω.
(3) Second breakdown limit (independent of temperature).
(3)
40 60 100
30
Fig.2 DC SOAR; LBE2003S.
MGD996
VCE (V)
handbook, halfpage
2
P
tot
(W)
1.5
1
0.5
0
−50 0 200
50 100 150
MGD989
Tmb (oC)
Fig.3 Power dissipation derating as a function of
mounting-base temperature; LBE2003S.
1998 Feb 16 3
Philips Semiconductors Product specification
NPN microwave power transistors LBE2003S; LBE2009S
3
10
handbook, halfpage
I
C
(mA)
2
10
(1)
10
1
10 20 40
Tmb≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 100 Ω.
(3) Second breakdown limit (independant of temperature).
(3)
(2)
VCE (V)
Fig.4 DC SOAR; LBE2009S.
MGD990
handbook, halfpage
2
10
4
P
tot
(W)
3
2
1
0
−50 0
50 100 150
MGD991
Tmb (
200
o
C)
Fig.5 Power dissipation derating as a function of
mounting-base temperature; LBE2009S.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
thermal resistance from junction to mounting-base Tj=75°C
LBE2003S 65 K/W
LBE2009S 36 K/W
R
th mb-h
thermal resistance from mounting-base to heatsink Tj=75°C 1.5 K/W
1998 Feb 16 4
Philips Semiconductors Product specification
NPN microwave power transistors LBE2003S; LBE2009S
CHARACTERISTICS
T
=25°C unless otherwise specified.
mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CBO
I
CER
I
EBO
h
C
C
C
FE
cb
ce
eb
collector cut-off current VCB= 20 V; IE=0 −−0.1 µA
collector cut-off current VCB= 40 V; IE=0
LBE2003S −−150 µA
LBE2009S −−250 µA
collector cut-off current
LBE2003S V
LBE2009S V
= 35 V; RBE= 220 Ω− − 500 µA
CB
= 35 V; RBE= 100 Ω− − 1000 µA
CB
emitter cut-off current VEB= 1.5 V; IC=0
LBE2003S −−0.05 µA
LBE2009S −−0.2 µA
DC current gain VCE=5V; IC=30mA 15 − 150
V
=5V; IC= 110 mA 15 − 150
CE
collector-base capacitance VCB= 18 V; VEB= 1.5 V;
IE=IC= 0; f = 1 MHz
LBE2003S − 0.3 − pF
LBE2009S − 0.6 − pF
collector-emitter capacitance VCE= 18 V; VEB= 1.5 V;
IE=IC= 0; f = 1 MHz
LBE2003S − 0.45 − pF
LBE2009S − 0.6 − pF
emitter-base capacitance VCB= 10 V; VEB=1V;
IE=IC= 0; f = 1 MHz
LBE2003S − 1.7 − pF
LBE2009S − 3.3 − pF
1998 Feb 16 5
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