Philips LAE4001R Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LAE4001R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LAE4001R
FEATURES
• Self-aligned process entirely ion implanted and gold
sandwich metallization
• Optimum temperature profile
• Excellent performance and reliability.
APPLICATIONS
Common emitter class A linear power amplifiers up
to 4 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT100 metal ceramic package with emitter connected
to the metallized lid. A miniature ceramic encapsulation is
used for compatibility with stripline microwave circuits.
PINNING - SOT100
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
handbook, halfpage
2
Marking code: R8.
3
1
c
4
b
e
MAM312
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance up to T
MODE OF
OPERATION
=25°C in a common emitter class A circuit.
case
f
(GHz)
V
(V)
CE
I
C
(mA)
P
L1
(mW)
G
po
(dB)
Z
(Ω)
i
Z
L
(Ω)
CW linear amplifier 4 15 25 >85 >8.5 typ.7 + j22 typ. 10 + j38
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LAE4001R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 30 V
collector-emitter voltage RBE= 220 Ω−25 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 2V
collector current (DC) − 80 mA
total power dissipation T
≤ 100 °C − 480 mW
case
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s − 235 °C
2
10
handbook, halfpage
I
C
(mA)
10
1
11010
T
≤ 100°C; RBE< 220 Ω.
case
(1) V
(2) V
CEO
CER
.
.
(1) (2)
Fig.2 DC SOAR.
VCE (V)
MGD988
2
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50 100 200150
T
case
Fig.3 Power derating curve.
MGL069
o
(
C)
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 3
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