Philips JC559 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JC559
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jul 09
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistor JC559
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification
• Low-noise input stages in tape recorders, hi-fi amplifiers
and other audio-frequency equipment.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
handbook, halfpage
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−30 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor JC559
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −30 V −−1−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −2 mA; VCE= −5V
125 − 800
see Fig 2
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA; note 1 −−60 −300 mV
= −100 mA; IB= −5 mA; note 1 −−180 −650 mV
I
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA; note 1 −−750 − mV
= −100 mA; IB= −5 mA; note 1 −−930 − mV
I
C
base-emitter voltage IC= −2 mA; VCE= −5 V; note 2 −600 −650 −750 mV
I
= −10 mA; VCE= −5 V; note 2 −−−820 mV
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 4 − pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 12 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−4dB
f = 10 Hz to 15.7 kHz
I
=−200 µA; VCE= −5 V; RS=2kΩ;
C
−−4dB
f = 1 kHz; B = 200 Hz
Notes
1. V
decreases by about −1.7 mV/K with increasing temperature.
BEsat
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 27 3
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