DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
JC501
NPN general purpose transistor
Product specification |
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1999 Apr 27 |
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Supersedes data of 1997 Mar 17 |
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Philips Semiconductors |
Product specification |
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NPN general purpose transistor |
JC501 |
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FEATURES
∙Low current (max. 100 mA)
∙Low voltage (max. 45 V).
APPLICATIONS
∙ General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complement: JA101.
LIMITING VALUES
PINNING
PIN |
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DESCRIPTION |
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1 |
base |
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2 |
collector |
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3 |
emitter |
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handbook, halfpage1 |
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MAM259 |
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Fig.1 |
Simplified outline (TO-92; SOT54) |
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and symbol. |
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In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
50 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
45 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
6 |
V |
IC |
collector current (DC) |
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− |
100 |
mA |
ICM |
peak collector current |
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200 |
mA |
IBM |
peak base current |
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− |
200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C |
− |
500 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
1999 Apr 27 |
2 |
Philips Semiconductors |
|
Product specification |
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NPN general purpose transistor |
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JC501 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
250 |
K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 45 V |
− |
− |
15 |
nA |
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IE = 0; VCB = 45 V; Tj = 125 °C |
− |
− |
4 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 6 V |
− |
− |
100 |
nA |
hFE |
DC current gain |
IC = 1 mA; VCE = 5 V |
135 |
− |
600 |
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hFE |
DC current gain |
IC = 1 mA; VCE = 5 V |
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JC501P |
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135 |
− |
270 |
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JC501Q |
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200 |
− |
400 |
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JC501R |
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300 |
− |
600 |
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VCEsat |
collector-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA |
− |
− |
200 |
mV |
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IC = 100 mA; IB = 5 mA |
− |
− |
600 |
mV |
VBEsat |
base-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA |
− |
− |
830 |
mV |
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IC = 100 mA; IB = 5 mA |
− |
− |
1.06 |
V |
VBE |
base-emitter voltage |
IC = 2 mA; VCE = 5 V |
550 |
− |
700 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
− |
6 |
pF |
Ce |
emitter capacitance |
IC = ic = 0; VEB = 0.5 V; f = 1 MHz |
− |
11.5 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; |
− |
130 |
− |
MHz |
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f = 100 MHz |
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F |
noise figure |
IC = 200 μA; VCE = 5 V; |
− |
− |
10 |
dB |
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RS = 2 kΩ; f = 1 kHz; B = 200 Hz |
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1999 Apr 27 |
3 |
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