Philips JC501Q, JC501P, JC501R Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JC501
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 17
1999 Apr 27
Philips Semiconductors Product specification
NPN general purpose transistor JC501
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: JA101.
handbook, halfpage
1
2
3
1
MAM259
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
3
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistor JC501
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=45V −−15 nA
I
= 0; VCB=45V; Tj= 125 °C −−4µA
E
emitter cut-off current IC= 0; VEB=6V −−100 nA
DC current gain IC= 1 mA; VCE= 5 V 135 − 600
DC current gain IC= 1 mA; VCE=5V
JC501P 135 − 270
JC501Q 200 − 400
JC501R 300 − 600
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−200 mV
I
= 100 mA; IB=5mA −−600 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−830 mV
I
= 100 mA; IB=5mA −−1.06 V
C
base-emitter voltage IC= 2 mA; VCE= 5 V 550 − 700 mV
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−6pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11.5 − pF
transition frequency IC= 10 mA; VCE=5V;
− 130 − MHz
f = 100 MHz
= 200 µA; VCE=5V;
C
−−10 dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
1999 Apr 27 3
Loading...