Philips JC501Q, JC501P, JC501R Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JC501
NPN general purpose transistor
Product specification Supersedes data of 1997 Mar 17
1999 Apr 27
Philips Semiconductors Product specification
NPN general purpose transistor JC501
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base 2 collector
APPLICATIONS
3 emitter
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complement: JA101.
handbook, halfpage
1
2
3
1
MAM259
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter 50 V collector-emitter voltage open base 45 V emitter-base voltage open collector 6V collector current (DC) 100 mA peak collector current 200 mA peak base current 200 mA total power dissipation T
25 °C 500 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
2
3
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistor JC501
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=45V −−15 nA
I
= 0; VCB=45V; Tj= 125 °C −−4µA
E
emitter cut-off current IC= 0; VEB=6V −−100 nA DC current gain IC= 1 mA; VCE= 5 V 135 600 DC current gain IC= 1 mA; VCE=5V
JC501P 135 270 JC501Q 200 400 JC501R 300 600
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−200 mV
I
= 100 mA; IB=5mA −−600 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−830 mV
I
= 100 mA; IB=5mA −−1.06 V
C
base-emitter voltage IC= 2 mA; VCE= 5 V 550 700 mV collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−6pF emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz 11.5 pF transition frequency IC= 10 mA; VCE=5V;
130 MHz
f = 100 MHz
= 200 µA; VCE=5V;
C
−−10 dB
RS=2kΩ; f = 1 kHz; B = 200 Hz
1999 Apr 27 3
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