Philips JC327A, JC327-16 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

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M3D186

JC327

PNP general purpose transistor

Product specification			1999 Apr 27
Supersedes data of 1997 Mar 10

Philips Semiconductors	Product specification
PNP general purpose transistor	JC327

FEATURES

∙High current (max. 500 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337.

PINNING

PIN									DESCRIPTION
1			base
2			collector
3			emitter
handbook, halfpage1	2
	2
	3										1
	3
											MAM285
Fig.1	Simplified outline (TO-92; SOT54)
	and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−50	V
VCEO	collector-emitter voltage	open base; IC = −10 mA	−	−45	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−500	mA
ICM	peak collector current		−	−1	A
IBM	peak base current		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	625	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit-board.

1999 Apr 27

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Philips Semiconductors			Product specification
PNP general purpose transistor				JC327
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	0.2	K/mW

Note

1. Transistor mounted on an FR4 printed-circuit-board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −20 V	−	−	−100	nA
		IE = 0; VCB = −20 V; Tj = 150 °C	−	−	−5	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	IC = −100 mA; VCE = −1 V
	JC327-25		160	−	400
hFE	DC current gain	IC = −500 mA; VCE = −1 V	40	−	−
VCEsat	collector-emitter saturation voltage	IC = −500 mA; IB = −50 mA	−	−	−700	mV
VBE	base-emitter voltage	IC = −500 mA; VCE = −1 V; note 1	−	−	−1.2	V
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	8	−	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V;	80	−	−	MHz
		f = 100 MHz

Note

1. VBE decreases by about −2 mV/K with increasing temperature.

1999 Apr 27

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