Philips JC327A, JC327-16 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 27
DISCRETE SEMICONDUCTORS
JC327
PNP general purpose transistor
ok, halfpage
M3D186
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor JC327
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC337.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit-board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−50 V
V
CEO
collector-emitter voltage open base; IC= −10 mA −−45 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−500 mA
I
CM
peak collector current −−1A
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 625 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 27 3
Philips Semiconductors Product specification
PNP general purpose transistor JC327
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit-board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. V
BE
decreases by about −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 0.2 K/mW
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −20 V −−−100 nA
I
E
= 0; VCB= −20 V; Tj= 150 °C −−−5µA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
h
FE
DC current gain IC= −100 mA; VCE= −1V
JC327-25 160 − 400
h
FE
DC current gain IC= −500 mA; VCE= −1V 40 −−
V
CEsat
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−−700 mV
V
BE
base-emitter voltage IC= −500 mA; VCE= −1 V; note 1 −−−1.2 V
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8 − pF
f
T
transition frequency IC= −10 mA; VCE= −5V;
f = 100 MHz
80 −−MHz
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