Philips JC327 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D186
JC327
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistor JC327
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
handbook, halfpage
PNP transistor in a TO-92; SOT54 plastic package.
1
2
3
1
NPN complement: JC337.
MAM285
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−50 V
collector-emitter voltage open base; IC= −10 mA −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
3
Note
1. Transistor mounted on an FR4 printed-circuit-board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistor JC327
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit-board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BE
C
c
f
T
thermal resistance from junction to ambient note 1 0.2 K/mW
collector cut-off current IE= 0; VCB= −20 V −−−100 nA
I
= 0; VCB= −20 V; Tj= 150 °C −−−5µA
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −100 mA; VCE= −1V
JC327-25 160 − 400
DC current gain IC= −500 mA; VCE= −1V 40 −−
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−−700 mV
base-emitter voltage IC= −500 mA; VCE= −1 V; note 1 −−−1.2 V
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8 − pF
transition frequency IC= −10 mA; VCE= −5V;
80 −−MHz
f = 100 MHz
Note
1. V
decreases by about −2 mV/K with increasing temperature.
BE
1999 Apr 27 3
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