Philips JA101P Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JA101
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
File under Discrete Semiconductors, SC10
1998 Aug 04
Philips Semiconductors Product specification
PNP general purpose transistor JA101
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC501.
handbook, halfpage
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
peak collector current −−200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= −1 mA; VCE= −5 V 135 600
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz
1998 Aug 04 2
Philips Semiconductors Product specification
PNP general purpose transistor JA101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1998 Aug 04 3
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