Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
J308; J309; J310
N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
Page 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
FEATURES
• Low noise
• Interchangeability of drain and source connections
• High gain.
PINNING - TO-92
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
APPLICATIONS
• AM input stage in car radios
• UHF/VHF amplifiers, oscillators and mixers.
1
2
3
g
MAM197
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
handbook, halfpage
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage VDS=10V; ID=1µA
J308 −1 −6.5 V
J309 −1 −4V
J310 −2 −6.5 V
I
DSS
drain current VGS= 0; VDS=10V
J308 12 60 mA
J309 12 30 mA
J310 24 60 mA
P
tot
y
forward transfer admittance VDS=10V; ID=10mA 10 − mS
fs
total power dissipation up to T
=50°C − 400 mW
amb
d
s
1996 Jul 30 2
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
DS
GSO
GDO
G
tot
stg
j
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T
=50°C − 400 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 150
T
Fig.2 Power derating curve.
amb
MCD212
o
(
C)
1996 Jul 30 3
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm × 10 mm.
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
R
DSon
forward transfer admittance ID= 10 mA; VDS=10V 10 −−mS
y
fs
common source output admittance ID= 10 mA; VDS=10V −−250 µS
y
os
thermal resistance from junction to ambient; note 1 250 K/W
gate-source breakdown voltage IG= −1 µA; VDS=0 −25 −−V
gate-source cut-off voltage ID=1µA; VDS=10V V
J308 −1 −−6.5 V
J309 −1 −−4V
J310 −2 −−6.5 V
gate-source forward voltage IG= 1 mA; VDS=0 −−1V
drain current VDS=10V; VGS=0
J308 12 − 60 mA
J309 12 − 30 mA
J310 24 − 60 mA
gate leakage current VGS= −15 V; VDS=0 −−−1nA
drain-source on-state resistance VGS= 0; VDS= 100 mV − 50 −Ω
1996 Jul 30 4
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
DYNAMIC CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
is
C
rs
g
is
g
fs
g
rs
g
os
V
n
input capacitance VDS=10V; VGS= −10 V; f = 1 MHz 3 5 pF
=10V; VGS= 0; T
V
DS
=25°C6−pF
amb
reverse transfer capacitance VDS= 0; VGS= −10 V; f = 1 MHz 1.3 2.5 pF
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
VDS=10V; ID= 10 mA; f = 100 MHz 200 −µS
=10V; ID= 10 mA; f = 450 MHz 3 − mS
V
DS
VDS=10V; ID= 10 mA; f = 100 MHz 13 − mS
=10V; ID= 10 mA; f = 450 MHz 12 − mS
V
DS
VDS=10V; ID= 10 mA; f = 100 MHz −30 −µS
=10V; ID= 10 mA; f = 450 MHz −450 −µS
V
DS
VDS=10V; ID= 10 mA; f = 100 MHz 150 −µS
=10V; ID= 10 mA; f = 450 MHz 400 −µS
V
DS
equivalent input noise voltage VDS=10V; ID= 10 mA; f = 100 Hz 6 − nV/√Hz
50
handbook, halfpage
I
DSS
(mA)
40
30
20
10
0
0 −1 −2 −4
VDS= 10V; Tj=25°C.
MCD220
−3
V
GSoff
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
(V)
20
handbook, halfpage
Y
fs
(mS)
16
12
8
4
0
0 −2 −4 −8
VDS= 10 V; ID= 10 mA; Tj=25°C.
Fig.4 Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
MCD219
−6
V
(V)
GSoff
1996 Jul 30 5
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
150
handbook, halfpage
G
os
(µS)
100
50
0
0
VDS= 10 V; ID= 10 mA; Tj=25°C.
−1 −2 −4
MCD221
−3
V
(V)
GSoff
Fig.5 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
80
handbook, halfpage
R
DSon
(Ω)
60
40
20
0
0 −1 −2 −4
VDS= 100 mV; VGS= 0; Tj=25°C.
−3
V
Fig.6 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
GSoff
MCD222
(V)
16
handbook, halfpage
ID
(mA)
12
8
4
0
0 4 8 12 16
Tj=25°C.
Fig.7 Typical output characteristics; J308.
MCD216
VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
VDS (V)
16
handbook, halfpage
ID
(mA)
12
8
4
0
−2 −1.5 −1 −0.5 0
VDS= 10 V; Tj=25°C.
Fig.8 Typical transfer characteristics; J308.
MCD213
VGS (V)
1996 Jul 30 6
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
20
handbook, halfpage
ID
(mA)
16
12
8
4
0
0 4 8 12 16
Tj=25°C.
Fig.9 Typical output characteristics; J309.
MCD218
VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
VDS (V)
20
handbook, halfpage
ID
(mA)
16
12
8
4
0
−2 −1.5 −1 −0.5 0
VDS= 10 V; Tj=25°C.
Fig.10 Typical transfer characteristics; J309.
MCD215
VGS (V)
40
handbook, halfpage
I
D
(mA)
30
20
10
0
048 16
Tj=25°C.
Fig.11 Typical output characteristics; J310.
MCD217
VGS = 0 V
−0.5 V
−1 V
−1.5 V
−2 V
−2.5 V
12
VDS (V)
40
handbook, halfpage
I
D
(mA)
30
20
10
0
−4 −3 −20
VDS= 10 V; Tj=25°C.
−1
VGS (V)
Fig.12 Typical transfer characteristics; J310.
MCD214
1996 Jul 30 7
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
handbook, halfpage
4
C
rs
(pF)
3
2
1
0
−10 −40
VDS= 10 V; Tj=25°C.
−8 −6 −2
MCD224
VGS (V)
Fig.13 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
10
handbook, halfpage
C
is
(pF)
8
6
4
2
0
−10 0
VDS= 10 V; Tj=25°C.
−8 −6 −4 −2
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
MCD223
VGS (V)
3
10
handbook, full pagewidth
I
D
(µA)
2
10
10
1
−1
10
−2
10
−3
10
−2.5 −2 −1.5 −1 −0.5 0
VDS= 10 V; Tj=25°C.
MCD229
VGS (V)
Fig.15 Drain current as a function of gate-source voltage; typical values.
1996 Jul 30 8
Page 9
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
4
−10
handbook, full pagewidth
I
G
(pA)
3
−10
2
−10
−10
−1
−1
−10
02
Tj=25°C.
ID = 10 mA
4 6 8 10 12 14
Fig.16 Gate current as a function of drain-gate voltage; typical values.
1 mA
100 µA
I
G
MCD230
VDG (V)
16
4
10
handbook, full pagewidth
I
GSS
(pA)
3
10
2
10
10
1
−1
10
−25 0
25 50 75 100 125 150
Fig.17 Gate current as a function of junction temperature; typical values.
Tj (
MCD231
o
C)
175
1996 Jul 30 9
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Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
100
handbook, halfpage
gis, b
is
(mS)
10
1
0.1
10
VDS= 10 V; ID= 10 mA; T
100 1000
=25°C.
amb
Fig.18 Input admittance; typical values.
b
g
is
is
f (MHz)
MCD228
100
handbook, halfpage
gfs, −b
fs
(mS)
g
fs
MCD227
10
−b
fs
1
VDS= 10 V; ID= 10 mA; T
amb
10010
=25°C.
f (MHz)
1000
Fig.19 Forward transfer admittance; typical values.
2
10
handbook, halfpage
−brs, −g
rs
(mS)
MCD226
10
− b
rs
1
− g
−1
10
−2
10
VDS= 10 V; ID= 10 mA; T
amb
=25°C.
rs
10010
f (MHz)
1000
Fig.20 Reverse transfer admittance; typical values.
100
handbook, halfpage
bos, g
os
(mS)
10
b
os
1
g
os
0.1
10
VDS= 10 V; ID= 10 mA; T
100 1000
=25°C.
amb
Fig.21 Output admittance; typical values.
MCD225
f (MHz)
1996 Jul 30 10
Page 11
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
PACKAGE OUTLINE
ndbook, full pagewidth
0.40
min
4.2 max
1.7
1.4
5.2 max 12.7 min
1
4.8
2.54
max
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
2
3
0.66
0.56
Fig.22 TO-92 (SOT54).
2.0 max
0.48
0.40
(1)
MBC014 - 1
1996 Jul 30 11
Page 12
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 30 12
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