Philips j308 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
J308; J309; J310
N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
FEATURES
• Low noise
• Interchangeability of drain and source connections
• High gain.
PINNING - TO-92
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
APPLICATIONS
• AM input stage in car radios
• UHF/VHF amplifiers, oscillators and mixers.
1
2
3
g
MAM197
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
handbook, halfpage
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage VDS=10V; ID=1µA
J308 −1 −6.5 V
J309 −1 −4V
J310 −2 −6.5 V
I
DSS
drain current VGS= 0; VDS=10V
J308 12 60 mA
J309 12 30 mA
J310 24 60 mA
P
tot
y
forward transfer admittance VDS=10V; ID=10mA 10 − mS
fs
total power dissipation up to T
=50°C − 400 mW
amb
d
s
1996 Jul 30 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
DS
GSO
GDO
G
tot
stg
j
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T
=50°C − 400 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 150
T
Fig.2 Power derating curve.
amb
MCD212
o
(
C)
1996 Jul 30 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors J308; J309; J310
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm × 10 mm.
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
V
GSS
I
DSS
I
GSS
R
DSon
forward transfer admittance ID= 10 mA; VDS=10V 10 −−mS
y
fs
common source output admittance ID= 10 mA; VDS=10V −−250 µS
y
os
thermal resistance from junction to ambient; note 1 250 K/W
gate-source breakdown voltage IG= −1 µA; VDS=0 −25 −−V
gate-source cut-off voltage ID=1µA; VDS=10V V
J308 −1 −−6.5 V
J309 −1 −−4V
J310 −2 −−6.5 V
gate-source forward voltage IG= 1 mA; VDS=0 −−1V
drain current VDS=10V; VGS=0
J308 12 − 60 mA
J309 12 − 30 mA
J310 24 − 60 mA
gate leakage current VGS= −15 V; VDS=0 −−−1nA
drain-source on-state resistance VGS= 0; VDS= 100 mV − 50 −Ω
1996 Jul 30 4
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