Philips J177, J176, J174, J175 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
1 = source
2 = gate
3 = drain
Note: Drain and source are
interchangeable.
handbook, halfpage
Fig.1 Simplified outline and symbol, TO-92.
J174; J175;
J176; J177
1
2
3
g
MAM388
d
s
QUICK REFERENCE DATA
Drain-source voltage ± V
Gate-source voltage V
Gate current −I
Total power dissipation
up to T
=50°CP
amb
Drain current
−V
= 15 V; VGS=0 −I
DS
Drain-source ON-resistance
= 0.1 V; VGS=0 R
−V
DS
DS
GSO
G
tot
DSS
DS on
max. 30 V
max. 30 V
max. 50 mA
max. 400 mW
J174 J175 J176 J177
min.
max.
20
135
70
7
35
2
1.520mA
mA
max. 85 125 250 300 Ω
April 1995 2
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