Philips irfr220-01 Datasheet

M3D300

1. Description

2. Features

3. Applications

IRFR220

N-channel enhancement mode ﬁeld effect transistor

Rev. 01 — 14 August 2001 Product data

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

IRFR220 in SOT428 (D-PAK).

■ Fast switching

■ Low on-state resistance

■ Surface mount package.

■ Switched mode power supplies

■ DC to DC converters.

4. Pinning information

Table 1: Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base;

connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT428 package.

[1]

mb

2

13

Top view

SOT428 (D-PAK)

MBK091

g

MBB076

d

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I

D

P T R

DS

tot j DSon

drain-source voltage (DC) Tj=25to150°C − 200 V drain current (DC) Tmb=25°C; VGS=10V − 4.8 A total power dissipation Tmb=25°C − 42 W junction temperature − 150 °C drain-source on-state resistance VGS= 10 V; ID= 2.9 A 0.7 0.8 Ω

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain (reverse) diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 200 V drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−200 V gate-source voltage (DC) −±20 V drain current (DC) Tmb=25°C; VGS=10V;Figure 2 and 3 − 4.8 A

= 100 °C; VGS=10V;Figure 2 and 3 − 3.0 A

T

mb

peak drain current Tmb=25°C; tp≤ 10 µs − 19 A total power dissipation Tmb=25°C; Figure 1 − 42 W storage temperature −55 +150 °C operating junction temperature −55 +150 °C

source (diode forward) current (DC) Tmb=25°C − 4.8 A peak (diode forward) source current Tmb=25°C; tp≤ 10 µs − 19 A

9397 750 08519

Product data Rev. 01 — 14 August 2001 2 of 12

Philips Semiconductors

5

IRFR220

N-channel enhancement mode ﬁeld effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa1

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

120

I

der (%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

03aa23

Tmb (oC)

VGS≥ 10 V

I

der

D

-------------------

I

°

D25C

()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

1 ms

10 ms

003aaa129

VDS (V)

3

10

I (A)

2

10

D

10

1

-1

10

-2

10

R

= VDS / I

DSon

P

t

110102

D

t

p

δ =

T

p

t

T

DC

tp = 10 µs

100 ms

Tmb=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 08519

Product data Rev. 01 — 14 August 2001 3 of 12

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

thermal resistance from junction to mounting base

7.1 Transient thermal impedance

mounted on a metal clad substrate; Figure 4 3 K/W

003aaa131

t

p

δ =

T

p

t

T

101

tp (s)

Z

th(j-mb)

(K/W)

10

δ = 0.5

1

0.2

0.1

0.05

0.02

single pulse

-1

10

-4

10

-3

10

-2

10

-1

10

P

t

Fig 4. Transient thermal impedancefrom junction to mounting base as a function of

pulse duration.

9397 750 08519

Product data Rev. 01 — 14 August 2001 4 of 12

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain (reverse) diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 250 µA; VGS= 0 V 200 −−V gate-source threshold voltage ID= 250 µA; VDS=VGS; Figure 9 234V drain-source leakage current VDS= 200 V; VGS=0V −−25 µA

= 160 V; VGS=0V; Tj= 125 °C −−250 µA

V

DS

gate-source leakage current VGS= ±20 V; VDS=0V − 10 100 nA drain-source on-state resistance VGS= 10 V; ID= 2.9 A

=25°C; Figure 7 and 8 − 0.7 0.8 Ω

T

j

= 150 °C; Figure 7 and 8 −−1.9 Ω

T

j

forward transconductance VDS=50V; ID= 2.9 A 1.7 −−S total gate charge ID= 4.8 A; VDD= 160 V; VGS=10V;Figure 13 − 10 14 nC gate-source charge − 1.5 3.0 nC gate-drain (Miller) charge − 4.0 7.9 nC input capacitance VGS=0V; VDD= 25 V; f = 1 MHz; Figure 11 − 280 − pF output capacitance − 41 − pF reverse transfer capacitance − 25 − pF turn-on delay time VDD= 100 V; RD=20Ω; VGS=10V;

=18Ω

R

rise time − 17 − ns

G

− 5.0 − ns

turn-off delay time − 22 − ns fall time − 18 − ns

source-drain (diode forward) voltage IS= 4.8 A; VGS=0V;Figure 12 −−1.8 V reverse recovery time IS= 4.8 A; dIS/dt = −100 A/µs;

=0V;VDS=30V

V

recovered charge − 0.2 1.8 µC

GS

− 85 170 ns

9397 750 08519

Product data Rev. 01 — 14 August 2001 5 of 12

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

10

I

D

(A)

8

6

4

2

0

0246810

6

8

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

R

DSon

3

4.5

(Ω)

2

5

VGS (V) =

VDS (V)

VGS (V) =

5.5

003aaa132

10

5.5

5

4.5

003aaa134

6

10

5

I

VDS > ID x R

D

(A)

4

3

2

1

0

2

=25°C and 150 °C; VDS> ID× R

j

DSon

Tj = 150 οC

3456

DSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

3.4

a

2.6

003aaa133

25 οC

VGS (V)

03aa31

1

0

024681012

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1.8

1.0

0.2

-60 20 100 180

R

DSon

=

a

----------------------------- -

R

DSon 25°C()

Tj (οC)

Fig 8. Normalized drain source on-state resistance

factor as a function of junction temperature.

9397 750 08519

Product data Rev. 01 — 14 August 2001 6 of 12

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

5

V

GS(th)

(V)

4

3

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

GS

max

typ

min

03aa32

(oC)

T

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

3

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

01 2

3

03aa35

maxtypmin

4

5

V

(V)

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

003aaa135

C

iss

2

10

C

oss

C

rss

10

0

1

10

VDS (V)

2

10

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 08519

Product data Rev. 01 — 14 August 2001 7 of 12

Philips Semiconductors

IRFR220

N-channel enhancement mode ﬁeld effect transistor

(A)

7

I

S

6

5

4

3

2

1

0

0.2

Tj = 150 οC

0.4

003aaa136

25 οC

1.00.80.6

VSD (V)

10

V

GS

(V)

8

6

4

2

0

Tj=25°C and 150 °C; VGS=0V ID= 4.8 A; VDD= 160 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa137

2

4

6

QG (nC)

8

9397 750 08519

Product data Rev. 01 — 14 August 2001 8 of 12

Philips Semiconductors

N-channel enhancement mode ﬁeld effect transistor

9. Package outline

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped)

seating plane

y

A

E

b

2

A

mounting

base

A

2

A

1

E

1

IRFR220

D

1

SOT428

D

H

E

L

2

L

13

b

1

e

1

DIMENSIONS (mm are the original dimensions)

A

(1)

A

UNIT

mm

Note

1. Measured from heatsink back to lead.

VERSION

A

1

max.

0.65

2.38

0.45

2.22

OUTLINE

SOT428 TO-252 SC-63

b

2

0.89

0.71

IEC JEDEC EIAJ

bc

b

1

max.

1.1

0.9

b

5.36

5.26

wAM

D

c

2

max.

0.4

6.22

0.2

5.98

REFERENCES

L

1

0 10 20 mm

scale

E

max.

6.73

6.47

E

min.

4.0

1

D

max.

4.81

4.45

1

ee

4.57

2.285

H

E

1

max.

10.4

9.6

L

1

L

min.

2.95

0.5

2.55

EUROPEAN

PROJECTION

L

0.7

0.5

2

y

w

max.

0.2 0.2

ISSUE DATE

98-04-07 99-09-13

Fig 14. SOT428.

9397 750 08519

Product data Rev. 01 — 14 August 2001 9 of 12

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010814 - Product data; initial version

IRFR220

N-channel enhancement mode ﬁeld effect transistor

9397 750 08519

Product data Rev. 01 — 14 August 2001 10 of 12

Philips Semiconductors

11. Data sheet status

IRFR220

N-channel enhancement mode ﬁeld effect transistor

Data sheet status

Objective data Development This data sheet contains data from the objective speciﬁcation forproduct development. Philips Semiconductors

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2]

Deﬁnition

reserves the right to change the speciﬁcation in any manner without notice.

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakesno representations or warranties thattheseproducts are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

9397 750 08519

Product data Rev. 01 — 14 August 2001 11 of 12

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

IRFR220

N-channel enhancement mode ﬁeld effect transistor

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 14 August 2001 Document order number: 9397 750 08519