January 1995 3
Philips Semiconductors Product specification
Hex inverter
HEF4069UB
gates
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
=25°C; CL= 50 pF; input transition times ≤ 20 ns
V
DD
V
SYMBOL TYP. MAX.
TYPICAL EXTRAPOLATION FORMULA
Propagation delays 5 45 90 ns 18 ns + (0,55 ns/pF) C
L
In→ O
n
10 t
PHL
20 40 ns 9 ns + (0,23 ns/pF) C
L
HIGH to LOW 15 15 25 ns 7 ns + (0,16 ns/pF) C
L
54080ns13ns+(0,55 ns/pF) C
L
LOW to HIGH 10 t
PLH
20 40 ns 9 ns + (0,23 ns/pF) C
L
15 15 30 ns 7 ns + (0,16 ns/pF) C
L
Output transition times 5 60 120 ns 10 ns + (1,0 ns/pF) C
L
HIGH to LOW 10 t
THL
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
5 60 120 ns 10 ns + (1,0 ns/pF) C
L
LOW to HIGH 10 t
TLH
30 60 ns 9 ns + (0,42 ns/pF) C
L
15 20 40 ns 6 ns + (0,28 ns/pF) C
L
V
DD
V
TYPICAL FORMULA FOR P (µW)
Dynamic power 5 600 f
i
+∑(foCL) × V
DD
2
where
dissipation per 10 4 000 f
i
+∑(foCL) × V
DD
2
fi= input freq. (MHz)
package (P) 15 22 000 f
i
+∑(foCL) × V
DD
2
fo= output freq. (MHz)
C
L
= load capacitance (pF)
∑ (f
oCL
) = sum of outputs
V
DD
= supply voltage (V)