Philips HEF4069UBU, HEF4069UBT, HEF4069UBPB, HEF4069UBP, HEF4069UBDB Datasheet

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INTEGRATED CIRCUITS

DATA SHEET

For a complete data sheet, please also download:

The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC

The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC

HEF4069UB gates

Hex inverter

Product specification

 

January 1995

File under Integrated Circuits, IC04

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips HEF4069UBU, HEF4069UBT, HEF4069UBPB, HEF4069UBP, HEF4069UBDB Datasheet

Philips Semiconductors

Product specification

 

 

Hex inverter

HEF4069UB gates

DESCRIPTION

The HEF4069UB is a general purpose hex inverter. Each of the six inverters is a single stage.

Fig.2 Pinning diagram.

HEF4069UBP(N): 14-lead DIL; plastic (SOT27-1)

HEF4069UBD(F): 14-lead DIL; ceramic (cerdip) (SOT73)

HEF4069UBT(D): 14-lead SO; plastic (SOT108-1)

( ): Package Designator North America

Fig.1 Functional diagram.

FAMILY DATA, IDD LIMITS category GATES

See Family Specifications for VIH/VIL unbuffered stages

Fig.3 Schematic diagram (one inverter).

January 1995

2

Philips Semiconductors Product specification

Hex inverter

 

 

 

 

 

 

 

 

 

HEF4069UB

 

 

 

 

 

 

 

 

 

gates

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times £ 20 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

SYMBOL

TYP. MAX.

 

TYPICAL EXTRAPOLATION FORMULA

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Propagation delays

5

 

45

90

ns

 

18 ns

+

(0,55 ns/pF) CL

In ® On

10

tPHL

20

40

ns

 

9 ns

+

(0,23 ns/pF) CL

HIGH to LOW

15

 

15

25

ns

 

7 ns

+

(0,16 ns/pF) CL

 

5

 

40

80

ns

 

13 ns

+

(0,55 ns/pF) CL

LOW to HIGH

10

tPLH

20

40

ns

 

9 ns

+

(0,23 ns/pF) CL

 

15

 

15

30

ns

 

7 ns

+

(0,16 ns/pF) CL

Output transition times

5

 

60

120

ns

 

10 ns

+

(1,0 ns/pF) CL

HIGH to LOW

10

tTHL

30

60

ns

 

9 ns

+

(0,42 ns/pF) CL

 

15

 

20

40

ns

 

6 ns

+

(0,28 ns/pF) CL

 

5

 

60

120

ns

 

10 ns

+

(1,0 ns/pF) CL

LOW to HIGH

10

tTLH

30

60

ns

 

9 ns

+

(0,42 ns/pF) CL

 

15

 

20

40

ns

 

6 ns

+

(0,28 ns/pF) CL

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

TYPICAL FORMULA FOR P (mW)

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dynamic power

 

5

600 fi + å (foCL) ´ VDD2

 

where

dissipation per

 

10

4 000 fi + å (foCL) ´ VDD2

 

fi = input freq. (MHz)

package (P)

 

15

22 000 fi + å (foCL) ´ VDD2

 

fo = output freq. (MHz)

 

 

 

 

 

 

 

 

 

CL = load capacitance (pF)

 

 

 

 

 

 

 

 

 

å (foCL) = sum of outputs

 

 

 

 

 

 

 

 

 

VDD = supply voltage (V)

January 1995

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