DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D252
CGD914
CATV amplifier module
Preliminary specification 1999 Nov 12
Philips Semiconductors Preliminary specification
CATV amplifier module CGD914
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC), employing both GaAs
and Si dies.
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 19.75 20.25 dB
f = 870 MHz 20.2 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 345 375 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Nov 12 2
Philips Semiconductors Preliminary specification
CATV amplifier module CGD914
CHARACTERISTICS
Bandwidth 45 to 870 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45MHz 19.75 20 20.25 dB
SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB
FL flatness straight line f = 45 to 870 MHz −−±0.45 dB
flatness narrow band in each 6 MHz segment −−±0.1 dB
S
11
S
22
S
21
S
12
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 21 −−dB
phase response f = 50 MHz −45 − +45 deg
reverse isolation RF
CTB composite triple beat 79 chs; f
X
mod
cross modulation 79 chs; fm= 55.25 MHz; note 1 −−−73 dB
=24V; Tmb=35°C; ZS=ZL=75Ω
B
f = 870 MHz 20.2 21 21.5 dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 16 −−dB
f = 550 to 650 MHz 15 −−dB
f = 650 to 750 MHz 14 −−dB
f = 750 to 870 MHz 14 −−dB
f = 870 to 914 MHz 10 −−dB
f = 80 to 160 MHz 21 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 17 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 14 −−dB
to RF
out
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
in
= 445.25 MHz; note 1 −−−76 dB
m
= 649.25 MHz; note 2 −−−63 dB
m
= 745.25 MHz; note 3 −−−55 dB
m
=44dBmV; fm= 547.25 MHz −−−73 dB
o
=44dBmV; fm=745.25MHz −−−63 dB
o
=44dBmV; fm=745.25MHz −−−59.5 dB
o
= 55.25 MHz; note 2 −−−64 dB
m
= 55.25 MHz; note 3 −−−58 dB
m
=44dBmV; fm= 55.25 MHz −−−71 dB
o
=44dBmV; fm=55.25MHz −−−67 dB
o
=44dBmV; fm= 55.25 MHz −−−64 dB
o
−−21 dB
1999 Nov 12 3