Philips BZD27-C68, BZD27-C62, BZD27-C5V6, BZD27-C5V1, BZD27-C56 Datasheet

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DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification Supersedes data of October 1991 File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
FEATURES
Glass passivated
High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87 package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
Low leakage current
Excellent stability
handbook, 4 columns
ka
Zener working voltage range:
3.6 to 270 V for 46 types
Transient suppressor stand-off
MAM249
voltage range: 6.2 to 430 V for 45 types
Fig.1 Simplified outline (SOD87) and symbol.
Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp= 105 °C; see Figs 2 and 3
BZD27-C3V6 to -C6V8 1.7 W BZD27-C7V5 to -C510 2.3 W
P
P
tot
ZSM
total power dissipation PCB mounted (see Fig.7)
BZD27-C3V6 to -C6V8 T BZD27-C7V5 to -C510 T
non-repetitive peak reverse power dissipation
=60°C; see Fig.2 0.8 W
amb
=55°C; see Fig.3 0.8 W
amb
tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Figs.4 and 5 BZD27-C3V6 to -C6V8 300 W BZD27-C7V5 to -C510 300 W
P
RSM
non-repetitive peak reverse power dissipation
10/1000 µs exponential pulse (see Fig.8);
Tj=25°C prior to surge BZD27-C7V5 to -C510 150 W
T
stg
storage temperature
BZD27-C3V6 to -C6V8 65 +200 °C BZD27-C7V5 to -C510 65 +175 °C
T
j
junction temperature
BZD27-C3V6 to -C6V8 65 +200 °C BZD27-C7V5 to -C510 65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
ELECTRICAL CHARACTERISTICS Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
Per type when used as voltage regulator diodes
=25°C unless otherwise specified.
T
j
forward voltage IF= 0.2 A; see Fig.6 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
()atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C3V6 3.4 3.6 3.8 4 8 0.14 0.04 100 100 1 C3V9 3.7 3.9 4.1 4 8 0.14 0.04 100 50 1 C4V3 4.0 4.3 4.6 4 7 0.12 0.02 100 25 1 C4V7 4.4 4.7 5.0 3 7 0.10 0.00 100 10 1 C5V1 4.8 5.1 5.4 3 6 0.08 0.02 100 5 1 C5V6 5.2 5.6 6.0 2 4 0.04 0.04 100 10 2 C6V2 5.8 6.2 6.6 2 3 0.01 0.06 100 5 2 C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3 C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3 C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3 C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5 C10
C11 C12 C13 C15 C16 C18 C20 C22 C24 C27 C30 C33 C36 C39 C43 C47
9.4 10 10.6 2 4 0.05 0.09 50 7 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20 28 30 32 8 15 0.06 0.11 25 1 22 31 33 35 8 15 0.06 0.11 25 1 24 34 36 38 21 40 0.06 0.11 10 1 27 37 39 41 21 40 0.06 0.11 10 1 30 40 43 46 24 45 0.07 0.12 10 1 33 44 47 50 24 45 0.07 0.12 10 1 36
1996 Jun 10 3
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