DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
handbook, 4 columns
ka
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
MAM249
voltage range: 6.2 to 430 V
for 45 types
Fig.1 Simplified outline (SOD87) and symbol.
• Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp= 105 °C; see Figs 2 and 3
BZD27-C3V6 to -C6V8 − 1.7 W
BZD27-C7V5 to -C510 − 2.3 W
P
P
tot
ZSM
total power dissipation PCB mounted (see Fig.7)
BZD27-C3V6 to -C6V8 T
BZD27-C7V5 to -C510 T
non-repetitive peak reverse
power dissipation
=60°C; see Fig.2 − 0.8 W
amb
=55°C; see Fig.3 − 0.8 W
amb
tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8 − 300 W
BZD27-C7V5 to -C510 − 300 W
P
RSM
non-repetitive peak reverse
power dissipation
10/1000 µs exponential pulse (see Fig.8);
Tj=25°C prior to surge
BZD27-C7V5 to -C510 − 150 W
T
stg
storage temperature
BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C
T
j
junction temperature
BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Voltage regulator diodes BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
Per type when used as voltage regulator diodes
=25°C unless otherwise specified.
T
j
forward voltage IF= 0.2 A; see Fig.6 − 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
9.4 10 10.6 2 4 0.05 0.09 50 7 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20
28 30 32 8 15 0.06 0.11 25 1 22
31 33 35 8 15 0.06 0.11 25 1 24
34 36 38 21 40 0.06 0.11 10 1 27
37 39 41 21 40 0.06 0.11 10 1 30
40 43 46 24 45 0.07 0.12 10 1 33
44 47 50 24 45 0.07 0.12 10 1 36
1996 Jun 10 3