Philips BZD27-C6V2, BZD27-C82, BZD27-C75, BZD27-C6V8, BZD27-C220 Datasheet

DATA SH EET

Product specification
Supersedes data of October 1991

1996 Jun 10

DISCRETE SEMICONDUCTORS

BZD27 series

Voltage regulator diodes

k, halfpage

M3D121

1996 Jun 10 2

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Zener working voltage range:

3.6 to 270 V for 46 types

• Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types

• Supplied in 8 mm embossed tape.

DESCRIPTION

Cavity free cylindrical glass SOD87
package through Implotec

(1)

technology. This package is

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

(1) Implotec is a trademark of Philips.

Fig.1 Simplified outline (SOD87) and symbol.

handbook, 4 columns

MAM249

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

tot

total power dissipation Ttp= 105 °C; see Figs 2 and 3

BZD27-C3V6 to -C6V8 − 1.7 W
BZD27-C7V5 to -C510 − 2.3 W

P

tot

total power dissipation PCB mounted (see Fig.7)

BZD27-C3V6 to -C6V8 T

amb

=60°C; see Fig.2 − 0.8 W

BZD27-C7V5 to -C510 T

amb

=55°C; see Fig.3 − 0.8 W

P

ZSM

non-repetitive peak reverse
power dissipation

tp= 100 µs; square pulse;

Tj=25°C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8 − 300 W
BZD27-C7V5 to -C510 − 300 W

P

RSM

non-repetitive peak reverse
power dissipation

10/1000 µs exponential pulse (see Fig.8);

Tj=25°C prior to surge
BZD27-C7V5 to -C510 − 150 W

T

stg

storage temperature

BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C

T

j

junction temperature

BZD27-C3V6 to -C6V8 −65 +200 °C
BZD27-C7V5 to -C510 −65 +175 °C

1996 Jun 10 3

Philips Semiconductors Product specification

Voltage regulator diodes BZD27 series

ELECTRICAL CHARACTERISTICS
Total series

T

j

=25°C unless otherwise specified.

Per type when used as voltage regulator diodes

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

forward voltage IF= 0.2 A; see Fig.6 − 1.2 V

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

REVERSE CURRENT

at REVERSE VOLTAGE

VZ (V) at I

Z

r

dif

(Ω)atI

Z

SZ (%/K) at I

Z

IZ (mA)

IR (µA)

VR (V)

MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.

C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10

9.4 10 10.6 2 4 0.05 0.09 50 7 7.5

C11

10.4 11 11.6 4 7 0.05 0.10 50 4 8.2

C12

11.4 12 12.7 4 7 0.05 0.10 50 3 9.1

C13

12.4 13 14.1 5 10 0.05 0.10 50 2 10

C15

13.8 15 15.6 5 10 0.05 0.10 50 1 11

C16

15.3 16 17.1 6 15 0.06 0.11 25 1 12

C18

16.8 18 19.1 6 15 0.06 0.11 25 1 13

C20

18.8 20 21.2 6 15 0.06 0.11 25 1 15

C22

20.8 22 23.3 6 15 0.06 0.11 25 1 16

C24

22.8 24 25.6 7 15 0.06 0.11 25 1 18

C27

25.1 27 28.9 7 15 0.06 0.11 25 1 20

C30

28 30 32 8 15 0.06 0.11 25 1 22

C33

31 33 35 8 15 0.06 0.11 25 1 24

C36

34 36 38 21 40 0.06 0.11 10 1 27

C39

37 39 41 21 40 0.06 0.11 10 1 30

C43

40 43 46 24 45 0.07 0.12 10 1 33

C47

44 47 50 24 45 0.07 0.12 10 1 36