Philips BZD23-C68, BZD23-C62, BZD23-C5V6, BZD23-C5V1, BZD23-C56 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D119
BZD23 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
handbook, 4 columns
ak
MAM248
voltage range:
6.2 to 430 V for 45 types
Fig.1 Simplified outline (SOD81) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp=25°C; lead length 10 mm;
BZD23-C3V6 to -C6V8 − 2.0 W
see Figs 2 and 3
BZD23-C7V5 to -C510 − 2.5 W
P
tot
total power dissipation T
BZD23-C3V6 to -C6V8 − 1.0 W
=55°C; see Figs 2 and 3;
amb
PCB mounted (see Fig.7)
BZD23-C7V5 to -C510 − 1.0 W
P
ZSM
non-repetitive peak reverse
power dissipation
tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Figs 4 and 5
BZD23-C3V6 to -C6V8 − 300 W
BZD23-C7V5 to -C510 − 300 W
P
RSM
non-repetitive peak reverse
power dissipation
10/1000 µs exponential pulse (see Fig.8);
Tj=25°C prior to surge
BZD23-C7V5 to -C510 − 150 W
T
stg
storage temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
T
j
junction temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
Per type when used as voltage regulator diodes
=25°C unless otherwise specified.
T
j
forward voltage IF= 0.2 A; see Fig.6 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
9.4 10 10.6 2 4 0.05 0.09 50 7 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20
28 30 32 8 15 0.06 0.11 25 1 22
31 33 35 8 15 0.06 0.11 25 1 24
34 36 38 21 40 0.06 0.11 10 1 27
37 39 41 21 40 0.06 0.11 10 1 30
40 43 46 24 45 0.07 0.12 10 1 33
44 47 50 24 45 0.07 0.12 10 1 36
1996 Jun 10 3
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