Philips BZD142W Datasheet
DISCRETE SEMICONDUCTORS
b
DATA SH EET
ook, halfpage
M3D121
BZD142W
ZenBlock; zener with
integrated blocking diode
Product specification 2000 May 01
Philips Semiconductors Product specification
ZenBlock; zener with
BZD142W
integrated blocking diode
FEATURES
• Zener and blocking function in one
package
• Glass passivated
• Low leakage current
• Excellent stability
• Supplied in 8 mm embossed tape.
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
T
stg
T
j
storage temperature −65 +150 °C
junction temperature −65 +150 °C
Limiting values zener
P
P
tot
RSM
total power dissipation Ttp= 105 °C; see Fig.2 − 1.5 W
non-repetitive peak reverse power
dissipation
Limiting values blocking diode
V
E
R
RSM
continuous reverse voltage − 600 V
non-repetitive peak reverse
avalanche energy
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
handbook, halfpage
Fig.1 Simplified outline (SOD87) and symbol.
10/1000 µs exponential pulse;
Tj=25°C prior to surge; see Fig.5
L = 120 mH; Tj=T
jmax
prior to
surge; inductive load switched off
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MAM433
− 100 W
− 10 mJ
ELECTRICAL CHARACTERISTICS ZENER
Tj=25°C unless otherwise specified.
REVERSECURRENT
at STAND-OFF
VOLTAGE
RSM
IR(µA)
(2)
TYPE
NUMBER
SUFFIX
(1)
WORKING VOLTAGE
(V) at IZ(see Fig.4) SZ(%/K) at I
V
Z
TEMPERATURE
COEFFICIENT
test
TEST
CURRENT
I
test
(mA)
CLAMPING
VOLTAGE
V
(CL)R
(V)
at I
(A)
MIN. NOM. MAX. MIN. MAX. MAX. MAX.
68 61 68 75 0.07 0.12 10 106 0.94 5 56
100 90 100 110 0.07 0.12 5 139 0.72 5 82
160 149 160 171 0.07 0.12 5 224 0.45 5 130
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
2. Non-repetitive peak reverse current in accordance with
“IEC 60060-1, Section 8”
(10/1000 µs pulse); see Fig.5.
2000 May 01 2
at V
(V)
R
Philips Semiconductors Product specification
ZenBlock; zener with
BZD142W
integrated blocking diode
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)R
I
R
C
d
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the
reverse avalanche breakdown
voltage
reverse current VR= 600 V −−5µA
diode capacitance f = 1 MHz; VR=0;
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
‘General Part of associated Handbook’
IR= 0.1 mA 700 −−V
V
= 600 V; Tj= 150 °C −−100 µA
R
− 15 − pF
see Fig.3
.
2000 May 01 3
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