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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BZD142
ZenBlockTM; zener with integrated blocking diode
Preliminary specification |
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2000 Dec 19 |
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Philips Semiconductors |
Preliminary specification |
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ZenBlockTM; zener with integrated blocking diode |
BZD142 |
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FEATURES
∙Zener and blocking function in one package
∙Glass passivated
∙Low leakage current
∙Excellent stability
∙Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
LIMITING VALUES
MGU216
Fig.1 Simplified outline (SOD81) and symbol.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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−65 |
+150 |
°C |
Zener |
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Ptot |
total power dissipation |
Ttp = 25 °C; lead length 10 mm; |
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2.1 |
W |
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see Fig.5 |
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Blocking diode |
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VR |
continuous reverse voltage |
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600 |
V |
ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj(max) prior to |
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10 |
mJ |
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avalanche energy |
surge; inductive load switched off |
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2000 Dec 19 |
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Philips Semiconductors |
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Preliminary specification |
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ZenBlockTM; zener with integrated blocking diode |
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BZD142 |
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ELECTRICAL CHARACTERISTICS ZENER/TVS |
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Tj = 25 °C unless otherwise specified. |
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TEMPERATURE |
TEST |
CLAMPING |
REVERSE CURRENT |
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WORKING VOLTAGE |
at STAND-OFF |
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COEFFICIENT |
CURRENT |
VOLTAGE |
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TYPE |
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VOLTAGE |
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NUMBER |
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V(CL)R |
at IRSM |
IR (mA) |
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SUFFIX(1) |
VZ (V) at IZ (see Fig.4) |
SZ (%/K) at Itest |
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(V) |
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Itest (mA) |
(A) |
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at VR (V) |
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MIN. |
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NOM. |
MAX. |
MIN. |
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MAX. |
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MAX. |
(note 2) |
MAX. |
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68 |
61 |
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68 |
75 |
0.07 |
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0.12 |
10 |
94.4 |
106 |
5 |
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56 |
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75 |
68 |
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75 |
82 |
0.07 |
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0.12 |
10 |
103.5 |
0.97 |
5 |
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62 |
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82 |
74 |
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82 |
90 |
0.07 |
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0.12 |
10 |
114 |
0.88 |
5 |
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68 |
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91 |
82 |
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91 |
100 |
0.07 |
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0.12 |
5 |
126 |
0.79 |
5 |
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75 |
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100 |
90 |
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100 |
110 |
0.07 |
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0.12 |
5 |
139 |
0.72 |
5 |
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82 |
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110 |
99 |
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110 |
121 |
0.07 |
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0.12 |
5 |
152 |
0.66 |
5 |
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91 |
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120 |
108 |
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120 |
132 |
0.07 |
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0.12 |
5 |
167 |
0.60 |
5 |
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100 |
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130 |
117 |
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130 |
143 |
0.07 |
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0.12 |
5 |
185 |
0.54 |
5 |
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110 |
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150 |
135 |
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150 |
165 |
0.07 |
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0.12 |
5 |
204 |
0.49 |
5 |
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120 |
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160 |
149 |
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160 |
171 |
0.07 |
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0.12 |
5 |
224 |
0.45 |
5 |
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130 |
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Notes
1.To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.
2.Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 ms pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING CODE
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
MAX. |
UNIT |
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V(BR)R |
reverse avalanche |
IR = 0.1 mA |
700 |
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V |
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breakdown voltage |
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IR |
reverse current |
VR = 600 V |
- |
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5 |
mA |
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VR = 600 V; Tj = 150 °C |
- |
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100 |
mA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; |
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15 |
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pF |
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see Fig.4 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
60 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
120 |
K/W |
Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.2. For more information please refer to the “General Part of associated Handbook”.
2000 Dec 19 |
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