Philips BZD142-82, BZD142-68, BZD142-160, BZD142-150, BZD142-130 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D119

BZD142

ZenBlock

TM

; zener with integrated

blocking diode

Preliminary specification 2000 Dec 19

Philips Semiconductors Preliminary specification

ZenBlockTM; zener with integrated blocking diode

BZD142

FEATURES

• Zener and blocking function in one package

• Glass passivated

• Low leakage current

• Excellent stability

• Available in ammo-pack.

DESCRIPTION

CavityfreecylindricalglasspackagethroughImplotec

TM(1)

MGU216

technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts

Fig.1 Simplified outline (SOD81) and symbol.

are matched.

(1) Implotec is a trademark of Philips.

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

T

stg

T

j

storage temperature −65 +150 °C
junction temperature −65 +150 °C

Zener

P

tot

total power dissipation Ttp=25°C; lead length 10 mm;

− 2.1 W

see Fig.5

Blocking diode

V
E

R
RSM

continuous reverse voltage − 600 V
non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj=T

j(max)

prior to

surge; inductive load switched off

− 10 mJ

2000 Dec 19 2

Philips Semiconductors Preliminary specification

ZenBlockTM; zener with integrated blocking diode

BZD142

ELECTRICAL CHARACTERISTICS ZENER/TVS

Tj=25°C unless otherwise specified.

REVERSE CURRENT

at STAND-OFF

VOLTAGE

IR (µA)

at VR (V)

TYPE

NUMBER

SUFFIX

WORKING VOLTAGE

(1)

VZ(V) at IZ(see Fig.4) SZ(%/K) at I

TEMPERATURE

COEFFICIENT

test

MIN. NOM. MAX. MIN. MAX. MAX. MAX.

TEST

CURRENT

I

(mA)

test

CLAMPING

VOLTAGE

V

(CL)R

(V)

at I

RSM

(A)

(note 2)

68 61 68 75 0.07 0.12 10 94.4 106 5 56
75 68 75 82 0.07 0.12 10 103.5 0.97 5 62
82 74 82 90 0.07 0.12 10 114 0.88 5 68
91 82 91 100 0.07 0.12 5 126 0.79 5 75
100 90 100 110 0.07 0.12 5 139 0.72 5 82
110 99 110 121 0.07 0.12 5 152 0.66 5 91
120 108 120 132 0.07 0.12 5 167 0.60 5 100
130 117 130 143 0.07 0.12 5 185 0.54 5 110
150 135 150 165 0.07 0.12 5 204 0.49 5 120
160 149 160 171 0.07 0.12 5 224 0.45 5 130

Notes

1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.

2. Non-repetitive peak reverse current in accordance with

“IEC 60060-1, Section 8”

(10/1000 µs pulse); see Fig.5.

ELECTRICAL CHARACTERISTICS BLOCKING CODE

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)R

reverse avalanche

IR= 0.1 mA 700 −−V

breakdown voltage

I

R

C

d

reverse current VR= 600 V −−5µA

V

= 600 V; Tj= 150 °C −−100 µA

R

diode capacitance f = 1 MHz; VR=0V;

− 15 − pF

see Fig.4

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.2.
For more information please refer to the

“General Part of associated Handbook”

.

2000 Dec 19 3