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DATA SH EET
Product specification 2000 Jan 13
DISCRETE SEMICONDUCTORS
BYX134GPS
High-voltage car ignition diode
M3D350
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2000 Jan 13 2
Philips Semiconductors Product specification
High-voltage car ignition diode BYX134GPS
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD118A is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
handbook, halfpage
ka
MAM402
Fig.1 Simplified outline (SOD118A) and symbol.
Cathode indicated by a blue band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 4kV
V
RWM
crest working reverse voltage − 4kV
I
F(AV)
average forward current − 50 mA
I
RSM
non-repetitive peak reverse current t = 100 µs triangular pulse;
T
j max
prior to surge
− 50 mA
T
stg
storage temperature −65 175 °C
T
j
junction temperature continuous − 175 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage IF=10mA 57V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 100 µA 5.5 7.5 kV
I
R
reverse current VR=V
RWMmax
; Tj= 175 °C − 30 µA
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
T
amb=Tleads
; lead length = 10 mm; in oil 125 K/W
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2000 Jan 13 3
Philips Semiconductors Product specification
High-voltage car ignition diode BYX134GPS
GRAPHICAL DATA
handbook, halfpage
020
200
0
40
80
120
160
4
I
F
(mA)
81216
V
F
(V)
MBL046
Fig.2 Forward current as a function of maximum
forward voltage.
Dotted line: Tj= 175°C.
Solid line: Tj=25°C.