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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D350
BYX134GP
High-voltage car ignition diodes
Product specification
1998 Dec 04
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Philips Semiconductors Product specification
High-voltage car ignition diodes BYX134GP
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
The SOD107A is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
ka
handbook, halfpage
APPLICATIONS
MAM404
• Car ignition systems
• Automotive applications with
Cathode indicated by light blue band.
extreme temperature
requirements.
Fig.1 Simplified outline (SOD107A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
I
F(AV)
I
RSM
T
stg
T
j
repetitive peak reverse voltage − 4kV
crest working reverse voltage − 4kV
average forward current − 50 mA
non-repetitive peak reverse current t = 100 µs triangular pulse;
T
prior to surge
j max
− 50 mA
storage temperature −65 175 °C
junction temperature continuous − 175 °C
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
F
(BR)R
forward voltage IF=10mA 5 7 V
reverse avalanche breakdown
IR= 100 µA 5.5 7.5 kV
voltage
I
R
reverse current VR=V
RWMmax
; Tj= 175 °C − 30 µA
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
T
amb=Tleads
; lead length = 10 mm 100 K/W
ambient
1998 Dec 04 2