Philips BYX134GL Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D458

BYX134GL

High-voltage car ignition diode

Product specification 2000 Feb 29

Philips Semiconductors Product specification

High-voltage car ignition diode BYX134GL

FEATURES

• Glass passivated

• High maximum operating temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy absorption capability.

DESCRIPTION

Rugged glass package, using a high temperature alloyed
construction.

The SOD119ACis hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.

The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.

APPLICATIONS

• Car ignition systems

• Automotive applications with extreme temperature

handbook, halfpage

requirements.

ka

Cathode indicated by a blue band.

Fig.1 Simplified outline (SOD119AC) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

MAM420

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

RWM

I

F(AV)

I

RSM

T

stg

T

j

repetitive peak reverse voltage − 4kV
crest working reverse voltage − 4kV
average forward current − 50 mA
non-repetitive peak reverse current t = 100 µs triangular pulse;

T

prior to surge

j max

− 50 mA

storage temperature −65 +200 °C
junction temperature continuous − 175 °C

maximum 30 minutes − 200 °C

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

V

(BR)R

forward voltage IF=10mA 57V
reverse avalanche breakdown

IR= 100 µA 5.5 7.5 kV

voltage

I

R

reverse current VR=V

RWMmax

; Tj= 175 °C − 30 µA

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

T

amb=Tleads

; lead length = 10 mm 90 K/W

ambient

2000 Feb 29 2