Philips byx133gl DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D354
BYX133GL
High-voltage car ignition diode
Product specification
Supersedes data of 1998 Dec 04
2000 Jan 13
Philips Semiconductors Product specification
High-voltage car ignition diode BYX133GL
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD119ABis hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
handbook, halfpage
ka
Cathode indicated by a brown band.
Fig.1 Simplified outline (SOD119AB) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MAM420
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
I
F(AV)
I
RSM
T
stg
T
j
repetitive peak reverse voltage − 3kV
crest working reverse voltage − 3kV
average forward current − 50 mA
non-repetitive peak reverse current t = 100 µs triangular pulse;
T
prior to surge
j max
− 50 mA
storage temperature −65 +200 °C
junction temperature continuous − 175 °C
maximum 30 minutes − 200 °C
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
F
(BR)R
forward voltage IF= 10 mA 3.75 5.25 V
reverse avalanche breakdown
IR= 100 µA 3.5 5.5 kV
voltage
I
R
reverse current VR=V
RWMmax
; Tj= 175 °C − 30 µA
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
T
amb=Tleads
; lead length = 10 mm 90 K/W
ambient
2000 Jan 13 2
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