Philips BYX132G Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D354

BYX132G

High-voltage car ignition diode

Product specification
Supersedes data of 1998 Nov 27

1998 Dec 04

Philips Semiconductors Product specification

High-voltage car ignition diode BYX132G

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

DESCRIPTION

Rugged glass package, using a high
temperature alloyed construction.

The SOD61AB2 is hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.

The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.

The BYX132G is marked with a black
cathode band on the body.

• Guaranteed avalanche energy
absorption capability.

APPLICATIONS

• Car ignition systems

ka

handbook, halfpage

MBK909

• Automotive applications with
extreme temperature
requirements.

Fig.1 Simplified outline (SOD61AB2) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

RWM

I

F(AV)

I

RSM

T

stg

T

j

T

j

repetitive peak reverse voltage − 2kV
crest working reverse voltage − 2kV
average forward current − 50 mA
non-repetitive peak reverse current t = 100 µs triangular pulse;

T

prior to surge

j max

− 50 mA

storage temperature −65 +200 °C
junction temperature continuous − 175 °C
junction temperature max. 30 min. − 200 °C

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

R

F
(BR)R

forward voltage IF= 10 mA 2.5 3.5 V
reverse avalanche breakdown voltage IR= 100 µA 2.6 3.7 kV
reverse current VR=V

RWMmax

; Tj= 175 °C − 30 µA

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient T

amb=Tleads

; lead length = 10 mm 90 K/W

1998 Dec 04 2