DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D183
BYX120G
High-voltage soft-recovery
controlled avalanche rectifier
Product specification
Supersedes data of May 1996
1996 Sep 26
Philips Semiconductors Product specification
High-voltage soft-recovery
controlled avalanche rectifier
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with
extreme temperature
requirements.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
handbook, halfpage
The cathode is marked by an orange band on the body.
Fig.1 Simplified outline (SOD88A) and symbol.
BYX120G
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
ak
MSB026
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
V
RRM
V
RWM
I
F(AV)
I
FRM
I
FSM
P
RSM
T
stg
T
j
repetitive peak reverse voltage − 3kV
crest working reverse voltage − 3kV
average forward current − 100 mA
repetitive peak forward current − 5A
non-repetitive peak forward current t = 10 ms half sinewave; Tj=T
non-repetitive peak reverse power
dissipation
prior to surge; VR=V
t=10µs; triangular pulse;
Tj=T
prior to surge
j max
RWMmax
j max
− 15 A
− 3kW
storage temperature −65 +200 °C
junction temperature continuous −65 +180 °C
maximum 30 mins −65 +200 °C
1996 Sep 26 2